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Preliminary Technical Data FEATURES Fixed gain of 29 dB Operation from 2.3 GHz to 2.4 GHz EVM 3% with 16 QAM OFDMA @ POUT = 25 dBm [3.5V] and @ POUT = 27.5 dBm [5V] Input internally matched to 50 Power supply: 3.2 V to 5.5 V Quiescent current 130 mA in high power mode 70 mA in low power mode PAE: >20% Multiple operating modes to reduce battery drain Low power mode: 100 mA (Operating) Standby mode: 10 mA Sleep mode: < 1 A 2.3 GHz to 2.4 GHz WiMAX Power Amplifier ADL5570 FUNCTIONAL BLOCK DIAGRAM VCC1 VCC VCC2 VCC RFIN IM1 1st stage IM2 2nd stage IM3 3rd stage RFOUT OM STBY VREG MODE Bias_1 Bias_2 Bias_3 CFLT APPLICATIONS WiMAX/WiBro Mobile Terminals and CPEs Good performance from 2.5Ghz to 2.7Ghz - See Page 7 Figure 1.AD5570 Block Diagram GENERAL DESCRIPTION The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power amplifier designed for WiMAX terminals and CPEs using TDD operation at a duty cycle of 50% or lower. With a gain of 29 dB and an output compression point of 31 dBm , it can operate at an output power level up to 26 dBm while maintaining an EVM of 3% with a supply voltage of 3.5V. PAE is greater than 20% at POUT = 25 dBm with a 3.5V supply voltage. The ADL5570 RF input is matched on chip and provides an input return loss of less than -10 dB. The open-collector output is externally matched with strip-line and external shunt capacitance. The ADL5570 operates over a supply voltage range from 3.2 V to 5.5 V with a supply current of 400mA Burst RMS when delivering 25 dBm (3.5 V supply). A low power mode is also available for operation at power levels 10 dBm with optimized operating and quiescent currents of 100 and 70 mA, respectively. A Standby mode is available which reduces the quiescent current to 10 mA: useful when a TDD terminal is receiving data. The ADL5570 is fabricated in a GaAs HBT process and is packaged in a 4mm x 4mm 16-Lead Pb-free RoHS compliant LFCSP that uses an exposed paddle for excellent thermal impedance. It operates from -40C to +85C. Rev. PrG Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 (c)2007 Analog Devices, Inc. All rights reserved. ADL5570 TABLE OF CONTENTS Features .............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Target Specifications - VCC = 3.5 V .............................................. 3 Target Specifications - Vcc = 5 V.................................................... 4 Preliminary Technical Data Pin Configuration and Function Descriptions..............................5 Typical Performance Characteristics ..............................................6 APPLICATIONS ...............................................................................7 2.5 GHz to 2.7 Ghz Peformance ..................................................7 Evaluation Board ...............................................................................8 Outline Dimensions ....................................................................... 10 REVISION HISTORY 3/07--Rev. PrF: Preliminary Version Rev. PrG| Page 2 of 10 Preliminary Technical Data TARGET SPECIFICATIONS - VCC = 3.5 V ADL5570 T = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 , MODE = 0 V, STBY = 0 V, VREG = 2.85 V, 33% duty cycle, unless otherwise noted. Table 1. Parameter Frequency Range Linear Output Power Gain vs. Frequency vs. Temp vs. Supply OP1dB EVM Input Return Loss Spectral Mask @ 25dBm Output Power Conditions See table 5 for tuning details MODE = 0 V, EVM 3% MODE = 2.5 V, EVM 3% 5 MHz -40C TA +85C 3.2 V to 4.2 V Unmodulated input POUT = 25 dBm Min 2.3 Typ 25 10 29 0.3 0.5 1 31 3 10 35 37 41 51 36 250 100 >20 10 10 1 10:1 Max 2.4 Unit GHz dBm dBm dB dB dB dB dBm % rms dB dBc dBc dBc dBc dBc mA mA % mA A s 5 MHz carrier offset 6 MHz carrier offset 10.5 MHz carrier offset 20 MHz carrier offset VCC = 3.5 V POUT = 25 dBm, MODE= 0 V. POUT = 12 dBm, MODE= 2.5 V. POUT = 25 dBm, MODE= 0 V VREG = 2.85 V, STBY = 2.5 V VREG = 0 V Harmonic Distortion Power Supply Interface Supply Current PAE Standby Mode Sleep Mode Turn On/Off Time VSWR Survivability Rev. PrG | Page 3 of 10 ADL5570 TARGET SPECIFICATIONS - VCC = 5 V Preliminary Technical Data T = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 , MODE = 0 V, STBY = 0 V, VREG = 2.85 V, 33% duty cycle, unless otherwise noted. Table 2. Parameter Frequency Range Linear Output Power Gain vs. Frequency vs. Temp vs. Supply OP1dB EVM Input Return Loss Spectral Mask @ 25dBm Output Power Conditions See table 5 for tuning details MODE = 0 V, EVM 3% MODE = 2.5 V, EVM 3 % 5 MHz -40C TA +85C 4.5 V to 5.5 V Unmodulated input POUT = 27.5 dBm 5MHz carrier offset 6 MHz carrier offset 10.5 MHz carrier offset 20 MHz carrier offset Harmonic Distortion Power Supply Interface Supply Current PAE Standby Mode Sleep Mode Turn On/Off Time VSWR Survivability VCC = 5 V POUT = 27.5 dBm, MODE = 0 V POUT = 13 dBm, MODE = 2.5 V POUT = 27.5 dBm, MODE = 0 V VREG = 2.85 V, STBY = 2.5 V VREG = 0 V 10:1 Min 2.3 Typ 27.5 10 28 0.3 0.5 1 32 3 10 38 39 43 49 36 300 115 16 10 10 1 Max 2.4 Unit GHz dBm dBm dB dB dB dB dBm % rms dB dBc dBc dBc dBc dBc mA mA % mA A s Rev. PrG| Page 4 of 10 Preliminary Technical Data PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 4 STBY 3 GND 2 VCC2 1 NC ADL5570 VCC1 5 RFIN 6 GND 7 VREG 8 PIN 1 INDICATOR 16 NC 15 RFOUT 14 RFOUT 13 NC ADL5570 TOP VIEW (Not to Scale) NC 11 CFLT 9 MODE 10 NC 12 Figure 2. ADL5570 Pin Configuration Table 3. Pin Function Descriptions Pin No. 5 6 8 Mnemonic VCC1 RFIN VREG Description Connect to Power Supply. Matched RF Input. When VREG is low, the device goes into sleep mode, reducing supply current to 1 uA. When VREG is high (2.85 V), the device operates in its normal transmit mode. When high, VREG draws a bias current of approximately 10 mA. A Ground Referenced Capacitor. It should be connected to this node to reduce bias line noise (see figure 8). Switches Between High Power and Low Power Modes. When MODE is low (0 V), the device operates in high power mode. When MODE is high (2.5 V), the device operates in low power mode. Unmatched RF Output. These parallel outputs can be matched to 50 using strip-line and shunt capacitance. The power supply voltage should be connected to these pins through a choke inductor. This power supply pin should be connected to the supply via a choke circuit (see Figure 8). When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBY can be taken high (2.5 V), reducing supply current to 10 mA. No Connect. Do not connect these pins. Connected to Ground. The exposed paddle should be soldered down to a low impedance ground plane (use multiple vias (at least 9) to stitch together the ground planes) for optimum electrical and thermal performance. 9 10 14, 15 2 4 1, 11 to 13, 16 7 CFLT MODE RFOUT VCC2 STBY N/C GND Exposed Paddle Table 4. Operating Modes 1 Mnemonic VREG MODE STBY 1 Normal Operation High Low Low Low Power Mode, POUT 10dBm High High Low xxxx-xx Standby Mode High X High Sleep Mode Low X X X = don't care. Rev. PrG | Page 5 of 10 ADL5570 TYPICAL PERFORMANCE CHARACTERISTICS Preliminary Technical Data T = 25C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 , MODE = 0 V, STBY = 0 V, VREG = 2.85 V, 33% duty cycle, unless otherwise noted. 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 OUTPUT POWER (dBm) 20 25 30 31 30 Vcc=3.5V 29 28 27 26 25 24 23 2280 BURST RM S CURRENT (A) Vcc=5V GAIN (dB) 2300 2320 2340 2360 2380 2400 2420 FREQUENCY (Mhz) Figure 3.Burst RMS Current vs. POUT, at 2.35 GHz, Vcc=3.5V 10 9 8 7 EVM (%) 6 GAIN (dB) 5 4 3 2 1 0 0 5 10 15 20 25 30 OUTPUT POWER (dBm) Vcc = 5V Vcc =3.5V 31 30 29 28 27 26 25 24 23 22 21 0 Figure 6. Gain vs. Frequency at PIN= -2 dBm Vcc =3.5V Vcc =5V 5 10 15 20 25 30 OUTPUT POWER (dBm) Figure 4. EVM vs. POUT at 2.35 GHz. Figure 7. Gain vs Output Power at 2.35 GHz 13 12 11 10 4 STBY 2 VCC2 3 GND 1 NC TOP VIEW (Not to Scale) 9 8 EVM (%) 16 NC 15 RFOUT 14 RFOUT 13 NC 05352-002 IFOP VCC1 5 RFIN 6 GND 7 VREG 8 PIN 1 INDICATOR 7 6 5 4 2400 Mhz 2350 Mhz 2300 Mhz ADL5571 TOP VIEW (Not to Scale) MODE 10 NC 11 NC 12 9 CFLT xxxx-xx 3 2 1 0 0 5 10 15 20 25 30 35 OUTPUT POWER (dBm) Figure 5. WiMax Spectrum with FCC Spectral Mask limits applied at 2.35Ghz, Vcc=3.5V, Pout=25dBm. Rev. PrG | Page 6 of 10 Figure 8.EVM vs. Output Power at Vcc=3.5V Preliminary Technical Data APPLICATIONS 2.5 GHZ TO 2.7 GHZ PEFORMANCE ADL5570 The ADL5570 is optimized for superior performance within the 2.3 GHz to 2.4 GHz frequency band. With a change in the external matching capacitor, C3, to 2.4pF, the ADL5570 shows good performance in the 2.5 GHz to 2.7 GHz frequency band. The EVM, Gain and RMS current performance data are shown in Figure 9 and Figure 10. 10 9 8 7 E V M (% ) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 OUTPUT POWER (dBm) 2500Mhz 2600Mhz 2700Mhz G AIN (dB) 30 29 28 27 26 25 24 23 22 21 20 2450 2500 2550 2600 FREQUENCY (Mhz) 2650 2700 2750 Figure 9. EVM vs Output power Perfomance at Vcc=3.5V and 16QAM OFDMA Signal Figure 10. Gain vs Frequency Performance at Vcc=3.5V and 16QAM OFDMA Signal Rev. PrG | Page 7 of 10 ADL5570 EVALUATION BOARD Preliminary Technical Data Figure 11. Evaluation Board Layout The ADL5570 perfomance data were taken on a FR4 board layout. Care should be taken to ensure 50 impedance for all RF traces. For optimal performance in linearity, gain and efficiency, the output matching capacitor, C3, should be placed 30 mils from the edge of the package. Rev. PrG | Page 8 of 10 Preliminary Technical Data Table 5. Evaluation Board Configuration Options Component Vpos, Vpos1, GND TP1(STBY) Function Supply and Ground Connections Transmit/Standby Mode: When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBY can be taken high (2.5 V), reducing supply current to 10 mA. Normal/Sleep Mode: When VREG is low, the device goes into sleep mode, reducing supply current to 10 uA. When VREG is high (2.85 V), the device operates in its normal transmit mode. When high, VREG draws a bias current of approximately 10 mA High/Low Power Mode: Switches between High Power and Low Power Modes. When Mode is low (0V), the device operates in High Power Mode. When Mode is high (MODE = 2.5 V), the device operates in Low Power Mode. Input Interface: (L3) matches the input to 50 ohms. Output Interface: C4 provides dc blocking. C3 matches the output to 50 ohms. Default Value W1 = Installed Not Applicable ADL5570 TP2 (VREG) Not Applicable TP5(MODE) Not Applicable L3, C3, C4, L3 = 2.2nH (Size 0402) C4 = 39pF (Size 0402) C3 = 3.3pF (Size 0402) (C3 value for 2.3 Ghz to 2.4Ghz operation) C2 C7, C8, C9, C10, C11, C12 Filter Interface: A ground referenced capacitor should be connected to this node to reduce bias line noise Power Supply Decoupling: The capacitors, C7, thru C12, are used for power supply decoupling. They should be placed as close as possible to the DUT. C2 = 2.2pF (Size 0402) C7 = 0.01 F (Size 0402) C8 = 0.01 F (Size 0402) C9 = 0.01 F (Size 0402) C10 = 0.01 F (Size 0402) C11 = 1 F (Size 0402) C12 = 1 F (Size 0402) L1 = 1nH (Size 0402) C6 = 3.6pF (Size 0402) L1 = 11nH (Size 0402) C5 = OPEN L1, L2, C6, C5 RF Trap: L1, C6 and L2, C5 form tank circuits and prevent RF from propagating on the dc supply lines Figure 12. Application Schematic Rev. PrG | Page 9 of 10 ADL5570 OUTLINE DIMENSIONS 4.00 BSC SQ 0.60 MAX 0.60 MAX 0.65 BSC 3.75 BSC SQ 0.75 0.60 0.50 (BOTTOM VIEW) Preliminary Technical Data PIN 1 INDICATOR 13 12 16 PIN 1 INDICATOR 1 TOP VIEW 2.25 2.10 SQ 1.95 5 4 9 8 0.25 MIN 1.95 BSC 12 MAX 1.00 0.85 0.80 0.80 MAX 0.65 TYP 0.05 MAX 0.02 NOM COMPLIANT TO JEDEC STANDARDS MO-220-VGGC Figure 13. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 4 mm x 4 mm Body, Very Thin Quad (CP-16-4) Dimensions shown in millimeters (c)2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. PR06729-0-4/07(PrG) Rev. PrG | Page 10 of 10 021207-A SEATING PLANE 0.35 0.30 0.25 0.20 REF COPLANARITY 0.08 |
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