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Ordering number : ENN7519
50C02SS
NPN Epitaxial Planar Silicon Transistor
50C02SS
Low-Frequency General-Purpose Amplifier Applications
Applications
*
Package Dimensions
unit : mm 2159A
[50C02SS]
Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit.
Features
* *
*
0.3
*
Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175m [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron).
Top View 1.4
0.3
Side View 0.1
0.25 3
0.8
1 0.45 0.2
2 Bottom View
0.07 0.07
1.4
Side View
0.6
3
1 : Base 2 : Emitter 3 : Collector SANYO : SSFP
2
1
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a glass-epoxy board (20!30!1.6mm) Conditions Ratings 60 50 5 400 800 200 150 --55 to +150 Unit V V V mA mA mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA
Marking : YN
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100152 No.7519-1/4
50C02SS
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 30 340 55 Ratings min typ 2.8 50 0.9 100 1.2 max Unit pF mV V V V V ns ns ns
Switching Time Test Circuit
PW=20s D.C.1% INPUT IB1 OUTPUT IB2 VR 50 + 220F VBE= --5V + 470F VCC=25V RB
RL
IC=20IB1= --20IB2=200mA
500
IC -- VCE
A A1 5m
600
IC -- VBE
VCE=2V
450
7mA
Collector Current, IC -- mA
30mA
350 300 250 200 150 100 50 0 0
3mA
Collector Current, IC -- mA
20m
400
10m
A
8mA
5mA
500
400
2mA
1mA 600A
200A
300
C 25C
200
100
IB=0
100 200 300 400 500 600 700 800 900 1000
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107
Collector-to-Emitter Voltage, VCE -- mV
1000 7 5 3 2
IT05106 3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta=75C
Ta=7 5
--25C
IC / IB=10
2 3
VCE=2V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
25C --25C
DC Current Gain, hFE
100
100 7 5 3 2
2
10 7
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05108
5 1.0
2
3
5 7 10
2
3
--2
5 7 100
5 C
3
25
C
Ta =
5
75 C
7
5 7 1000 IT05411
Collector Current, IC -- mA
Collector Current, IC -- mA
No.7519-2/4
50C02SS
3
VCE(sat) -- IC
IC / IB=20
1000 7
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
5 3 2
100 7 5
Ta =7 5 C C
--2 5
25
C
100 7 5 3 2
C 25
= Ta
75
C
--2
C 5
3 2
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05109
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05110
Collector Current, IC -- mA
10 7
VBE(sat) -- IC
Collector Current, IC -- mA
10
Cob -- VCB
f=1MHz
IC / IB=20
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
3 2
Output Capacitance, Cob -- pF
2 3 5 7 1000 IT05111
5
7
5
1.0 7 5 3 2
25C
Ta= --25C
3
75C
2
0.1 1.0
2
3
5 7 10
2
3
5 7 100
1.0 1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
1000
fT -- IC
Collector-to-Base Voltage, VCB -- V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
IT05112
Ron -- IB
IN
VCE=10V
f=1MHz
1k 1k IB
Gain-Bandwidth Product, fT -- MHz
OUT
7
5
3
2
100 1.0
ON Resistance, Ron --
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05113
0.1 0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
250
PC -- Ta
Base Current, IB -- mA
7 10 IT06092
Collector Dissipation, PC -- mW
200
M
ou
nt
ed
150
on
ag
las
s-e
po
100
xy
bo
ar
d(
20 !3
50
0! 1
.6m
m
)
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT05114
No.7519-3/4
50C02SS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice.
PS No.7519-4/4
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