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| DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg JA JC 2N3700 2N3701 140 80 7.0 1.0 500 1.8 -65 to +200 350 97.2 UNITS V V V A mW W C C/W C/W ELECTRICAL CHARACTERISTICS (TA=25C) SYMBOL ICBO ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=90V VCB=90V, TA=150C VEB=5.0V IC=100A IC=30mA IE=100A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=150mA , TA=-55C VCE=10V, IC=500mA VCE=10V, IC=1.0A 2N3700 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 50 90 100 300 40 50 15 (Continue) R0 2N3701 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 30 100 40 120 40 120 30 100 15 UNITS nA A nA V V V V V V 2N3700 and 2N3701 NPN SILICON TRANSISTOR SYMBOL fT Cob Cib hfe rb'Cc NF TEST CONDITIONS 2N3700 MIN MAX 400 12 60 400 400 4.0 2N3701 MIN MAX 80 400 12 60 200 400 4.0 UNITS MHz pF pF ps dB VCE=10V, IC=50mA, f=20MHz 100 VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz VCE=5.0V, IC=1.0mA, f=1.0KHz 80 VCB=10V, IE=10mA, f=4.0MHz 25 VCE=10V, IC=100A, f=1.0KHz, RS=1.0K 30 25 TO-18 PACKAGE - MECHANICAL OUTLINE A B D C E SYMBOL A (DIA) B (DIA) C D E F (DIA) G (DIA) H I J F LEAD #2 LEAD #1 G H LEAD #3 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.030 0.76 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.019 0.41 0.48 0.100 2.54 0.050 1.27 0.036 0.046 0.91 1.17 0.028 0.048 0.71 1.22 TO-18 (REV: R1) LEAD CODE: 1) Emitter 2) Base 3) Collector I 45 J R1 This datasheet has been download from: www..com Datasheets for electronics components. |
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