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| SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) -40 rDS(on) (W) 0.015 @ VGS = -10 V 0.023 @ VGS = -4.5 V ID (A) -50 -45 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50P04-15 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -40 "20 -50 -40 Unit V A -150 -50 100b 3a -55 to 175 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71176 S-00830--Rev. A, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 t v 10 sec. Steady State Symbol RthJA RthJC Typical 15 40 1.2 Maximum 18 50 1.5 Unit _C/W 1 SUD50P04-15 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -40 V, VGS = 0 V VDS = -40 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -10 V, ID = -30 A, TJ = 125_C VGS = -4.5 V, ID = -20 A Forward Transconductancea gfs VDS = -15 V, ID = -30 A 20 0.018 -120 0.012 0.015 0.024 0.023 S W -40 V -1.0 "100 -1 -50 nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -20 V, RL = 0 4 W 20 V, 0.4 ID ^ -50 A, VGEN = -10 V RG = 2 5 W 50 A 10 V, 2.5 VDS = -20 V VGS = -10 V ID = -50 A 20 V, 10 V, 50 VGS = 0 V, VDS = -25 V, f = 1 MHz 5400 640 300 85 25 15 15 380 75 140 25 580 ns 115 210 130 nC C pF F Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time ISM VSD trr IF = -50 A, VGS = 0 V IF = -50 A, di/dt = 100 A/ms -1.2 40 -150 -1.5 80 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 71176 S-00830--Rev. A, 24-Apr-00 SUD50P04-15 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8 V 200 I D - Drain Current (A) I D - Drain Current (A) 7V 6V 80 25_C 150 5V 100 60 125_C TC = -55_C 100 Vishay Siliconix Transfer Characteristics 40 50 4V 2, 3 V 20 0 0 2 4 6 8 10 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C 25_C g fs - Transconductance (S) 60 r DS(on) - On-Resistance ( ) 125_C 0.03 0.04 On-Resistance vs. Drain Current VGS = 4.5 V 40 0.02 VGS = 10 V 0.01 20 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Capacitance 8000 20 Gate Charge V GS - Gate-to-Source Voltage (V) 6000 C - Capacitance (pF) Ciss 16 VDS = 20 V ID = 50 A 12 4000 8 2000 Coss Crss 4 0 0 5 10 15 20 25 30 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 71176 S-00830--Rev. A, 24-Apr-00 www.vishay.com S FaxBack 408-970-5600 3 SUD50P04-15 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance ( ) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 TJ = 150_C TJ = 25_C 10 1.0 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature 60 500 Safe Operating Area 50 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 40 30 10 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 20 1 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Case Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.02 0.05 Single Pulse t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 40_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 30 www.vishay.com S FaxBack 408-970-5600 4 Document Number: 71176 S-00830--Rev. A, 24-Apr-00 |
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