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| AOD409 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD409 is Pb-free (meets ROHS & Sony 259 specifications). AOD409L is a Green Product ordering option. AOD409 and AOD409L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = -60V ID = -26A (VGS = -10V) RDS(ON) < 40m (VGS = -10V) @ -20A RDS(ON) < 55m (VGS = -4.5V) Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 20 -26 -18 -60 -26 134 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 1.9 Max 25 50 2.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD409 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1.2 -60 32 53 43 32 -0.73 -1 -30 2977 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 241 153 2 44 VGS=-10V, VDS=-30V, ID=-20A 22.2 9 10 12 VGS=-10V, VDS=-30V, RL=1.5, RGEN=3 IF=-20A, dI/dt=100A/s 14.5 38 15 40 59 50 2.4 54 28 3600 55 40 -1.9 Min -60 -0.003 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOD409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 -ID (A) 15 -3.5V 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 50 40 RDS(ON) (m) VGS=-4.5V 30 VGS=-10V 20 10 0 0 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 VGS=-4.5V ID=-20A VGS=-10V ID=-20A 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics -10V -4.5V -6V -5V -ID(A) -4V 30 25 20 15 125C 10 25C 5 VDS=-5V 80 125C ID=-20A 1.0E+01 1.0E+00 1.0E-01 125C 60 RDS(ON) (m) -IS (A) 25C 40 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 25C 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-30V ID=-20A A 4000 3600 3200 Capacitance (pF) 2800 2400 2000 1600 1200 800 400 0 0 5 25 30 35 40 45 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 50 0 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 8 -VGS (Volts) 6 4 2 100.0 10s 100s 1000 800 Power (W) 600 400 200 0 0.0001 TJ(Max)=175C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1ms 10ms DC 1.0 TJ(Max)=175C, TA=25C 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.001 0.01 0.1 1 Single Pulse 0.01 0.00001 0.0001 T 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -ID(A), Peak Avalanche Current 25 Power Dissipation (W) L ID tA = BV - V DD 70 60 50 40 30 20 10 0 20 15 TA=25C 10 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 30 25 Current rating -ID(A) 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 60 50 40 30 20 10 0 0.001 TA=25C Power (W) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.001 0.00001 Ton 0.01 T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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