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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A FEATURE Power dissipation PCM : 0.625 Plastic-Encapsulate Transistors TO-92 TRANSISTOR(NPN ) 1. EMITTER 2. BASE W(Tamb=25) 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Value 75 40 6 600 625 150 -55-150 123 Units V V V mA mW Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Junction and Storage Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Storage time Transition frequency VCE(sat)(1) VCE(sat)(2) VBE(sat) tstg unless Test otherwise specified) MIN 75 40 6 10 10 10 100 40 42 0.6 0.3 1.2 225 300 V V V ns MHz 300 MAX UNIT V V V nA nA nA conditions Ic= 10uA , IE=0 IC= 10 mA , IB=0 IE= 10uA, IC=0 VCB= 60 V , IE=0 VCE= 60 V , VEB(OFF)=3V VEB= 3 V , VCE=10 V, VCE=10 V, VCE=10 V, IC=0 IC= 150mA IC= 0.1mA IC= 500mA IC= 500 mA, IB= 50 mA IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VCC=30V, IC=150mA, IB1=IB2=15mA VCE= 20 V, IC= 20mA, f = 100MHz fT CLASSIFICATION OF hFE(1) Rank Range L 100-200 H 200-300 Typical Characteristics 3DK2222A |
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