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| 2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 900 800 7 5(Pulse10) 2.5 75(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) Ratings 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ V V 16.2 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 Unit A 23.00.3 V 9.50.2 A a b MHz pF 1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -1 ton (s) 1max tstg (s) 5max tf (s) 1max 3.35 1.5 B C E Weight : Approx 6.5g a. Part No. b. Lot No. I C - VCE Characteristics (Typical) 5 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) (IC/I B= 5) I C - V BE Temperature Characteristics (Typical) 5 (V CE= 4V) 700mA 60 0m A 500m A 2 Collector Current I C (A) 300mA 3 200mA Collector Current I C (A) 4 400 mA 4 3 mp) Temp ) e Te (Cas 2 IB=100mA 1 2 Te m p) 25 C - 5 5 C 1 1 V C E( sat) 0 0.03 0.05 0.1 0.5 125C (C as e 0 0 1 2 3 4 1 5 10 0 0 0.2 0.4 0.6 0.8 -55C (C -55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas 125C 25C (Case V B E( sat) ase Tem p) 1.0 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 10 j- a( C/W) h FE - IC Characteristics (Typical) ton*t st g*t f ( s) t on *t stg * tf - I C Characteristics (Typical) j-a - t Characteristics 2 D C Cur r ent Gai n h F E 25C VCC 250V IC:IB1:-IB2 =2:0.3:1 Const. Transient Thermal Resistance 125C 5 tstg 1 -55C Switching T im e 0.5 1 0.5 ton 0.2 0.1 0.5 tf 10 5 0.02 0.05 0.1 0.5 1 5 1 5 0.1 1 10 Time t(ms) 100 3.0 1.2 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collecto r Cur rent I C( A) 10 10 s Reverse Bias Safe Operating Area 20 10 80 P c - T a Derating 1m 0 s s 5 Co lle ctor Cu rren t I C( A) Maxim um Power Dissipatio n P C( W) 60 W ith In 1 0.5 fin 1 0.5 ite he 40 at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 20 0.01 10 50 100 500 1000 0.01 50 100 500 1000 3.5 0 Without Heatsink 0 50 100 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 99 This datasheet has been download from: www..com Datasheets for electronics components. |
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