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| ESDALC6V1M3 Dual low capacitance TRANSILTM array for ESD protection Main product applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers Communication systems Cellular phone handsets and accessories Video equipment SOT 883 (JEDEC MO-236AA Compliant) Features Configuration I/O2 2 1 1 22 I/O1 2 unidirectional low capacitance TRANSIL diodes Breakdown Voltage VBR = 6.1 V min Low diode capacitance (11 pF typ at 0 V) Low leakage current < 0.5 A Very small PCB area: 0.6 mm RoHS compliant GND 3 GND Underside view Description The ESDALC6V1M3 is a monolithic array designed to protect 1 line or 2 lines against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. Order code Part number ESDALC6V1M3 Marking K Complies with the following standards IEC61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883E-Method 3015-7: class 3 HBM (Human Body Model) Benefits High ESD protection level High integration Suitable for high density boards TRANSIL is a trademark of STMicroelectronics June 2006 Rev 3 www.st.com 1/8 Characteristics ESDALC6V1M3 1 Characteristics Table 1. Symbol VPP PPP Ipp Tj Tstg TL TOP ESD discharge Absolute ratings (TAMB = 25 C - limiting values) Parameter IEC61000-4-2 air discharge IEC61000-4-2 contact discharge Tj initial = TAMB Value 15 8 30 3 125 -55 + 150 260 -40 + 125 Unit kV W A C C C C Peak pulse power dissipation (8/20 s)(1) Repetitive peak pulse current (8/20 s) Junction temperature Storage temperature range Maximum lead temperature for soldering during 10 s Operating temperature range 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Symbol VRM VBR VCL IRM IPP T VF Electrical characteristics (TAMB = 25 C) Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop Slope= 1/ Rd I PP VCL VBR VRM I RM IR VF V I IF Parameter VBR IRM Rd T C Test condition IR = 1 mA VRM = 5 V Min 6.1 Typ Max 7.2 0.5 Unit V A 1.1 IR = 1 mA VR = 0 V, F = 1 MHz, VOSC = 30 mV 11 4.2 10-4/C pF 2/8 ESDALC6V1M3 Characteristics Figure 1. dB 0.00 - 3 dB - 10.00 S21 attenuation measurement results of each channel Figure 2. dB 0.00 Analog crosstalk measurements between channels -9.3 dB 540 MHz - 30.00 -52 dB - 20.00 - 60.00 - 30.00 - 90.00 f (Hz) - 40.00 100.0k 1.0M Att 1 10.0M 100.0M 1.8 GHz - 120.00 100.0k 1.0M Xtalk 10.0M f (Hz) 100.0M 1.0G 1.0G Figure 3. ESD response to IEC61000-4-2 (+15 kV air discharge) on each channel Figure 4. ESD response to IEC61000-4-2 (-15 kV air discharge) on each channel. Figure 5. Relative variation of peak pulse power versus initial junction temperature Figure 6. Peak pulse power versus exponential pulse duration PPP[Tj initial] /PPP[Tj initial=25C] 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Tj(C) PPP(W) 1000 Tj initial = 25 C 100 tP (s) 10 1 10 100 3/8 Ordering information scheme ESDALC6V1M3 Figure 7. Clamping voltage versus peak pulse current (typical values) Figure 8. Forward voltage drop versus peak forward current (typical values) IPP(A) 100.0 8/20 s Tj initial =25 C 1.E+00 IFM(A) 10.0 1.E-01 Tj =125C Tj=25C 1.0 1.E-02 VCL(V) 0.1 0 10 20 30 40 50 60 70 1.E-03 0.0 0.2 0.4 0.6 0.8 V(V) 1.0 1.2 1.4 1.6 1.8 2.0 Figure 9. Junction capacitance versus reverse voltage applied (typical values) Figure 10. Relative variation of leakage current versus junction temperature (typical values) IR[Tj] / I R[T j =25 C] C(pF) 12 11 10 9 8 7 6 5 4 3 2 1 0 10 F=1 MHz VOSC = 30 mVRMS Tj = 25 C 100 V R = 3V VLINE (V) 1 Tj(C) 25 50 75 100 125 0 1 2 3 4 5 6 2 Ordering information scheme ESDA LC 6V1 ESD Array Low Capacitance Breakdown Voltage 6V1 = 6.1 Volts min Package M3 = SOT883 M3 4/8 ESDALC6V1M3 Package information 3 Package information Table 3. SOT883 Dimensions Dimensions E Ref. D Millimetres Min Typ Max 0.52 0.05 0.15 0.50 0.60 1.00 0.35 0.65 0.20 0.20 0.25 0.25 0.30 0.30 0.08 0.08 0.20 0.55 Min 0.18 0.00 0.04 0.18 Inches Typ Max 0.2 0.02 0.06 0.20 0.24 0.39 0.14 0.26 0.10 0.10 0.12 0.12 0.08 0.22 A A1 A A1 L b e 1 2 0.45 0.00 0.10 0.45 b b1 D E L1 3 b1 e e1 e1 L L1 Figure 11. Footprint Figure 12. Marking 0.40 0.40 'K' + cathode bar 0.50 0.20 0.15 2 1 0.40 K 3 All dimensions in mm 5/8 Package information ESDALC6V1M3 Figure 13. ST Ecopack(R) recommended soldering reflow profile for PCB mounting Temperature (C) 260C max 255C 220C 180C 125 C 2C/s recommended 2C/s recommended 6C/s max 6C/s max 3C/s max 3C/s max 0 0 1 2 3 4 5 10-30 sec 90 to 150 sec 90 sec max 6 7 Time (min) Figure 14. Packing information Cathode bar 2.0 0.05 4.0 0.1 O 1.5 0.1 1.75 0.1 1.10 0.05 K K K 3.5 - 0.1 0.66 0.05 All dimensions in mm In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8.0 0.3 0.68 0.05 4.0 0.1 User direction of unreeling 6/8 ESDALC6V1M3 Ordering information 4 Ordering information Part number ESDALC6V1M3 Marking K Package SOT883 Weight 0.96 mg Bulk qty 30 000 Delivery mode Tape and reel 5 Revision history Date 04-Aug-2005 23-May-2006 16-Jun-2006 Revision 1 2 3 Initial release. Reformated to current standards. Added soldering reflow profile diagram. Updated tape and reel illustration (Figure 14). Changes 7/8 ESDALC6V1M3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 |
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