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CYStech Electronics Corp.
Small Signal Schottky diode
Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 1/4
BAT54S2
Description
Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package.
Features
*Guard ring protected *Low forward voltage drop *Very small plastic SMD package
Applications
*Ultra high-speed switching *Voltage clamping *Protection circuits *Blocking diodes
Symbol
Outline
SOD-323 BAT54S2
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
Symbol VR IF IFRM IFSM Ptot Tstg Tj Tamb Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature Conditions
Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 2/4
tp1s, 0.5 tp<10ms Tamb25
Min -65 -65
Max 30 200 300 600 200 +150 125 +125
Unit V mA mA mA mW
Characteristics (Ta=25C, unless otherwise specified)
Parameter Reverse Breakdown Voltage Symbol VBR VF(1) VF(2) Forward Voltage (Note 1) VF(3) VF(4) VF(5) Reverse Leakage Current (Note 2) Diode Capacitance Reverse Recovery Time IR CD trr IR=100A IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz when switched from IF= 10mA to IR=10mA; RL=100; measured at IR=1mA Condition Min. 30 Max. 240 320 400 500 800 2 10 5 Unit V mV mV mV mV mV A pF ns
Notes: 1.pulse test, tp=380s, duty cycle<2%. 2.pulse test, tp=300s, duty cycle<2%.
Thermal Characteristics
Symbol Rth j-a Parameter thermal resistance from junction to ambient Conditions note 1 Value 635 Unit K/W
Note 1 : Device mounted on a FR-4 PCB
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current & Forward Voltage
250
Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 3/4
100
Diode Capacitance & Reverse-Biased Voltage
200
150
Diode Capacitance-Cd (pF)
0 200 400 600 800 1000
Forward Current-IF (mA)
10
100
50
0
1
Forward Voltage-VF (mV)
0.1
1
10
100
Reverse Biased Voltage-VR (V)
BAT54S2
CYStek Product Specification
CYStech Electronics Corp.
SOD-323 Dimension
Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 4/4
Marking:
K A
1 2
5H JV
B D
Style: Pin 1.Cathode 2.Anode 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2
H
J
E
C
*: Typical
DIM A B C D
Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157
Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40
DIM E H J K
Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063
Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BAT54S2
CYStek Product Specification

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