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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
C H
KRC281M~KRC286M
EPITAXIAL PLANAR NPN TRANSISTOR
B
A
O
M
EQUIVALENT CIRCUIT
J
E
E
C B R1
1 L
2
3
N
DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 _ G 14.00 + 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 0.80 M N 0.55 MAX O 0.75
F
1. EMITTER 2. COLLECTOR 3. BASE
K
E
MAXIMUM RATING (Ta=25
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 400 150 -55 150 UNIT V V V mA W
CHARACTERISTIC
2002. 12. 5
Revision No : 1
D
G
TO-92M
1/2
KRC281M~KRC286M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC281M KRC282M Input Resistor KRC283M KRC284M KRC285M KRC286M Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only. Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN. 20 50 25 350 TYP. 2.2 4.7 5.6 6.8 10 22 30 4.8 MAX. 0.1 0.1 1200 MHz pF k UNIT V V V A V
2002. 12. 5
Revision No : 1
2/2

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