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VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A 600 V 600 V IC25 75 A 75 A VCE(sat) 2.5 V 3.0 V Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, T VJ = 125C, RG = 22 Clamped inductive load, L = 30 H TC = 25C Maximum Ratings 600 600 20 30 75 40 150 ICM = 80 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C TO-247 AD (IXGH) G C E TO-204 AE (IXGM) C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque (M3) 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5 200 1 100 40N60 40N60A 2.5 3.0 V V A mA nA V V Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 A, VGE = 0 V = 250 A, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l l l l l l l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) 1996 IXYS All rights reserved 91513E (3/96) IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 35 S TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK I C = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % 4500 VCE = 25 V, VGE = 0 V, f = 1 MHz 300 60 200 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90 , VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = Roff = 22 Switching times may increase for VCE (Clamp) > 0.8 * V CES, 40N60A higher TJ or increased RG 40N60A Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES , RG = R off = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES , higher 40N60 TJ or increased R G 40N60A 40N60 40N60A 45 88 100 200 600 200 3 100 200 4 600 600 300 12 6 1000 2000 800 250 80 120 pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns ns mJ mJ 0.5 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector 0.25 K/W 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig. 1 Saturation Characteristics 80 T J = 25C Fig. 2 Output Characterstics 350 300 VGE = 15V 13V 11V 9V T J = 25C 70 60 50 40 30 20 10 0 VGE = 15V 13V 11V 9V 7V 5V IC - Amperes IC - Amperes 250 200 150 100 50 0 7V 5V 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 T J = 25C Fig. 4 Temperature Dependence of Output Saturation Voltage 1.5 1.4 IC = 80A VCE(sat) - Normalized 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 IC = 20A IC = 40A VCE - Volts 6 5 4 3 2 1 0 4 5 6 7 8 9 10 11 12 13 14 15 IC = 40A IC = 20A VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 80 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 1.2 VGE(th) @ 250A 60 BV / VCE(sat) - Normalized 70 VCE = 100V 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 BVCES @ 3mA IC - Amperes 50 40 30 20 TJ = 25C 10 0 T J = 125C 0 1 2 3 4 5 6 7 8 9 10 VGE - Volts (c) 1996 IXYS All rights reserved TJ - Degrees C IXGH 40N60 IXGM 40N60 IXGH 40N60A IXGM 40N60A Fig.7 Gate Charge 15 IC = 40A Fig.8 Turn-Off Safe Operating Area 100 12 V CE = 500V T J = 125C 10 dV/dt < 3V/ns 9 6 3 0 IC - Amperes 0 50 100 150 200 250 VGE - Volts 1 0.1 0.01 0 100 200 300 400 500 600 700 Total Gate Charge - (nC) VCE - Volts Fig.9 Capacitance Curves 4500 4000 Cies Capacitance - pF 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 Cres Coes VCE - Volts Fig.10 Transient Thermal Impedance 1 D=0.5 Zthjc (K/W) 0.1 D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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