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| PD - 94224 IRF7754 HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -12V RDS(on) max 25m@VGS = -4.5V 34m@VGS = -2.5V 49m@VGS = -1.8V ID -5.4A -4.6A -3.9A Description HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner 1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2 with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -5.5 -4.4 -22 1 0.64 0.01 8 -55 to +150 Units V A W W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 125 Units C/W www.irf.com 1 05/14/01 IRF7754 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- --- --- -0.4 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.008 --- --- --- --- --- --- --- --- --- 22 3.9 4.8 9.8 18 267 191 1984 618 385 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 25 VGS = -4.5V, ID = -5.4A m VGS = -2.5V, ID = -4.6A 34 49 VGS = -1.8V, ID = -3.9A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -5.4A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -5.4A --- nC VDS = -6V --- VGS = -4.5V 14.7 VDD = -6V, VGS = -4.5V ns 27 ID = -1.0A 401 RD = 6 287 RG = 6 --- VGS = 0V --- pF VDS = -6V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 39 27 -1.0 A -22 -1.2 59 41 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, I F = -1.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t < 10 sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7754 100 VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V 100 VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 1 -1.0V 0.1 1 -1.0V 20s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.5A -I D , Drain-to-Source Current (A) 10 TJ = 150 C 1.5 TJ = 25 C 1 1.0 0.5 0.1 1.0 V DS = -10V 20s PULSE WIDTH 1.6 1.8 1.2 1.4 2.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7754 3200 2800 6 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd ID = -5.4A 5 V DS=-9.6V V DS=-6V C, Capacitance(pF) 2400 2000 1600 1200 800 400 0 1 Ciss 4 3 2 Coss Crss 1 0 10 100 0 5 10 15 20 25 30 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 TJ = 150 C TJ = 25 C -ID , Drain Current (A) I 10 1ms 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7754 6.0 VDS 5.0 RD VGS RG -ID , Drain Current (A) D.U.T. + 4.0 3.0 VGS Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 1.0 VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 1000 Thermal Response (Z thJA ) 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.001 0.01 0.1 1 0.1 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 10 100 1000 PDM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7754 ( RDS ( on ) , Drain-to-Source On Resistance ) ( RDS(on), Drain-to -Source On Resistance ) 0.070 0.1 0.060 0.08 VGS = -1.8V 0.050 0.06 0.040 I D = -5.5A 0.030 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0 0.0 5.0 10.0 15.0 20.0 25.0 -ID , Drain Current ( A ) 0.020 0.010 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7754 1.0 300 0.8 -VGS(th) ( V ) 200 ID = -250A 0.6 Power (W) 100 0 150 0.0001 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7754 TSSOP-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7702 LOT CODE (XX) PART NUMBER DAT E CODE (YW) XXYW 7702 T ABLE 1 WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DAT E CODE EXAMPLES : 9503 = 5C 9532 = EF 24 25 26 X Y Z T ABLE 2 WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.) YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D 50 51 52 X Y Z TSSOP-8 Tape and Reel 8LT SSOP (MO-153AA) 16 mm O 13" 16mm 8 mm FEED DIRECT ION NOT ES: 1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541. 8 www.irf.com IRF7754 TSSOP-8 Package Outline Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/01 www.irf.com 9 |
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