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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200
Description
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
6
MCT5201
MCT5210
MCT5211
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250% CTRCE(SAT) with 1 mA of LED input current. When an LED input current of 1.6 mA is supplied data rates to 20K bits/s are possible. The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an external base to emitter resistor data rates of 100K bits/s can be achieved.
6
6
1
1
Features
1
* * * * * *
High CTRCE(SAT) comparable to Darlingtons CTR guaranteed 0C to 70C High common mode transient rejection 5kV/s Data rates up to 150 kbits/s (NRZ) Underwriters Laboratory (UL) recognized (file #E90700) VDE recognized (file #94766) - Add option 300 (e.g., MCT5211.300)
SCHEMATIC
ANODE 1
6 BASE
Applications
* * * * * * CMOS to CMOS/LSTTL logic isolation LSTTL to CMOS/LSTTL logic isolation RS-232 line receiver Telephone ring detector AC line voltage sensing Switching power supply Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ 25C (LED plus detector) Derate Linearly From 25C EMITTER Continuous Forward Current Reverse Input Voltage Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation Derate Linearly From 25C DETECTOR Continuous Collector Current Detector Power Dissipation Derate Linearly from 25C
(c) 2003 Fairchild Semiconductor Corporation
CATHODE 2 5 COL
3
4 EMITTER
Symbol
Device
Value
Units
TSTG TOPR TSOL PD
All All All All
-55 to +150 -55 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 150 150 2.0
C C C mW mW/C mA V A mW mW/C mA mW mW/C
IF VR IF(pk) PD
All All All All All All All All
IC PD
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6/10/03
LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
ELECTRICAL CHARACTERISTICS (TA = 25C Unless otherwise specified.) INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters EMITTER Input Forward Voltage Forward Voltage Temp. Coefficient Reverse Voltage Junction Capacitance DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Dark Current Capacitance Collector to Emitter Collector to Base Emitter to Base (IC = 1.0 mA, IF = 0) (IC = 10 A, IF = 0) (IC = 10 A, IF = 0) (VCE = 10V, IF = 0, RBE = 1M) (VCE = 0, f = 1 MHz) (VCB = 0, f = 1 MHz) (VEB = 0, f = 1 MHz) BVCEO BVCBO BVEBO ICER CCE CCB CEB All All All All All All All 30 30 5 100 120 10 1 10 80 15 100 V V V nA pF pF pF (IF = 5 mA) (IF = 2 mA) (IR = 10 A) (VF = 0 V, f = 1.0 MHz) VF VF TA VR CJ All All All All 6 18 1.25 -1.75 1.5 V mV/ C V pF Test Conditions Symbol Device Min Typ** Max Units
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage(10) Isolation Resistance(10) Isolation Capacitance(9) Common Mode Transient Rejection - Output High Common Mode Transient Rejection - Output Low **All typical TA=25C Test Conditions (f = 60Hz, t = 1 min.) VI-O = 500 VDC, TA = 25C VI-O = 0, f = 1 MHz VCM = 50 VP-P1, RL= 750, IF = 0 VCM = 50 VP-P , RL= 1K, IF = 0 VCM = 50 VP-P1, RL = 750, IF =1.6mA VCM = 50 VP-P1, RL= 1K, IF = 5 mA Symbol VISO RISO CISO CMH CML Device All All All MCT5210/11 MCT5200/01 MCT5210/11 MCT5200/01 Min 5300 1011 0.7 5000 5000 Typ** Max Units Vac(rms) pF V/s V/s
(c) 2003 Fairchild Semiconductor Corporation
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TRANSFER CHARACTERISTICS (TA = 0C to 70C Unless otherwise specified.)
DC Characteristics Test Conditions Symbol Device MCT5200 MCT5201 MCT5210 MCT5211 MCT5210 CTR(CE) MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 MCT5200 MCT5201 MCT5210 MCT5211 Device MCT5210 Min Typ 10 7 14 15 17 24 1.6 3 0.4 8 2.5 11 7 16 18 12 0.5 1.1 1.3 2.5 Min 75 120 60 100 75 70 150 110 0.2 0.28 0.2 0.3 0.25 0.4 0.4 0.4 0.4 Max Typ** Max Units IF = 10 mA, VCE = 0.4 V IF = 5 mA, VCE = 0.4 V Saturated Current IF = 3.0 mA, VCE = 0.4 V Transfer Ratio(1) (Collector to Emitter) IF = 1.6 mA, VCE = 0.4 V IF = 1.0 mA, VCE = 0.4 V IF = 3.0 mA, VCE = 5.0 V Current Transfer Ratio I = 1.6 mA, VCE = 5.0 V (Collector to Emitter)(1) F IF = 1.0 mA, VCE = 5.0 V IF = 10 mA, VCB = 4.3 V IF = 5 mA, VCB = 4.3 V Current Transfer Ratio IF = 3.0 mA, VCE = 4.3 V Collector to Base(2) IF = 1.6 mA, VCE = 4.3 V IF = 1.0 mA, VCE = 4.3 V IF = 10 mA, ICE = 7.5 mA IF = 5 mA, ICE = 6 mA Saturation Voltage IF = 3.0 mA, ICE = 1.8 mA IF = 1.6 mA, ICE = 1.6 mA AC Characteristics Test Conditions RL = 330 , RBE = RL = 3.3 k, RBE = 39 k RL = 750 , RBE = RL = 4.7 k, RBE = 91 k RL = 1.5 k, RBE = RL = 10 k, RBE = 160 k VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 k RL = 330 , RBE = RL = 3.3 k, RBE = 39 k RL = 750 , RBE = RL = 4.7 k, RBE = 91 k RL = 1.5 k, RBE = RL = 10 k, RBE = 160 k VCE = 0.4V, VCC = 5V, RL = fig. 13, RBE = 330 k Delay Time(5) VCE = 0.4V, RBE = 330 k, RL = 1 k, VCC = 5V VCE = 0.4V, RBE = 330 k, RL = 1 k, VCC = 5V IF = 3.0 mA VCC = 5.0 V IF = 1.6mA VCC = 5.0V IF = 1.0mA VCC = 5.0V IF = 10mA IF = 5mA IF = 3.0 mA VCC = 5.0 V IF = 1.6mA VCC = 5.0V IF = 1.0mA VCC = 5.0 V IF = 10mA IF = 5mA IF = 10mA IF = 5mA IF = 10mA IF = 5mA tr
CTRCE(SAT)
%
%
CTR(CB)
%
VCE(SAT)
V
Symbol
Units
Propagation Delay High to Low(3)
TPHL
MCT5211
s
MCT5200 MCT5201 MCT5210
12 30
Propagation Delay Low to High(4)
TPLH
MCT5211
s
MCT5200 MCT5201 MCT5200 td MCT5201 MCT5200 MCT5201
20 13 7 15 6 20 s s
Rise Time(6)
(c) 2003 Fairchild Semiconductor Corporation
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TRANSFER CHARACTERISTICS (TA = 0C to 70C Unless otherwise specified.) (Continued)
DC Characteristics Storage Time(7) Test Conditions VCE = 0.4V, RBE = 330 k, RL = 1 k, VCC = 5V VCE = 0.4V, RBE = 330 k, RL = 1 k, VCC = 5V IF = 10mA IF = 5mA IF = 10mA IF = 5mA tf ts Symbol Device MCT5200 MCT5201 MCT5200 MCT5201 Min Typ** 15 10 16 16 Max 18 13 30 30 s s Units
Fall Time(8) **All typicals at TA = 25C
Notes 1. DC Current Transfer Ratio (CTRCE) is defined as the transistor collector current (ICE) divided by the input LED current (IF) x 100%, at a specified voltage between the collector and emitter (VCE). 2. The collector base Current Transfer Ratio (CTRCB) is defined as the transistor collector base photocurrent(ICB) divided by the input LED current (IF) time 100%. 3. Referring to Figure 14 the TPHL propagation delay is measured from the 50% point of the rising edge of the data input pulse to the 1.3V point on the falling edge of the output pulse. 4. Referring to Figure 14 the TPLH propagation delay is measured from the 50% point of the falling edge of data input pulse to the 1.3V point on the rising edge of the output pulse. 5. Delay time (td) is measured from 50% of rising edge of LED current to 90% of Vo falling edge. 6. Rise time (tr) is measured from 90% to 10% of Vo falling edge. 7. Storage time (ts) is measured from 50% of falling edge of LED current to 10% of Vo rising edge. 8. Fall time (tf) is measured from 10% to 90% of Vo rising edge. 9. CISO is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected). 10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
(c) 2003 Fairchild Semiconductor Corporation
Page 4 of 11
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TYPICAL PERFORMANCE GRAPHS
Fig. 1 LED Forward Voltage vs. Forward Current
2.0 VF - FORWARD VOLTAGE (V) 1.8 1.6 1.4
TA = -55C
1.2 1.0 NORMALIZED CTRCE 0.8 0.6 0.4 0.2
Fig. 2 Normalized Current Transfer Ratio vs. Forward Current
1.2 1.0 0.8 0.1
TA = 25C TA = 100C
Normalized to: IF = 5mA VCE = 5V TA = 25C
1 10 IF - LED FORWARD CURRENT (mA)
100
0 0.1
1 10 IF - FORWARD CURRENT (mA)
100
Fig. 3 Normalized CTR vs. Temperature
1.6 1.4 NORMALIZED CTRCE 1.2 1.0 0.8
IF = 1mA Normalized to: IF = 5mA VCE = 5V TA = 25C
Fig. 4 Normalized Collector vs. Collector - Emitter Voltage
10 NORMALIZED ICE - COLLECTOR - EMITTER CURRENT
IF = 10 mA
IF = 10mA IF = 2mA IF = 5mA
1
IF = 2 mA
IF = 5 mA IF = 1 mA IF = 0.5 mA
0.1 0.01 0.001
0.6 0.4 0.2 0.0 -60 -40
IF = 0.5 mA IF = 0.2 mA
IF = 0.2 mA
-20
0
20
40
60
80
100
0.0001 0.1
Normalized to: IF = 5mA : VCE = 5V TA = 25C
1 VCE - COLLECTOR - EMITTER VOLTAGE - V
10
TA - AMBIENT TEMPERATURE - C
Fig. 5 Normalized Collector Base Photocurrent Ratio vs. Forward Current
100 NORMALIZED ICB - COLLECTOR BASE PHOTO CURRENT NORMALIZED - COLLECTOR BASE CURRENT 10
Fig. 6 Normalized Collector Base Current vs. Temperature
IF = 10 mA
10
1
IF = 5 mA IF = 2 mA
1
0.1
IF = 1 mA IF = 0.5 mA
0.1
Normalized to: IF = 5mA VCB = 4.3V TA = 25C
0.01 Normalized to:
IF = 5mA VCB = 4.3V TA = 25C
IF = 0.2 mA
0.01 0.1
1
10
100
0.001 -60
-40
-20
0
20
40
60
80
100
IF - FORWARD CURRENT - mA
TA - AMBIENT TEMPERATURE - C
(c) 2003 Fairchild Semiconductor Corporation
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TYPICAL PERFORMANCE GRAPHS (Continued)
Fig. 7 Collector-Emitter Dark Current vs. Ambient Temperature
10000 ICEO - DARK CURRENT (nA)
IF = 0mA VCE = 10V
Fig. 8 Switching Time vs. Ambient Temperature
30 SWITCHING TIME - t(s) 25 20 15
tf IF = 10mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit
1000 100 10 1
tPLH ts
10 5
tPHL
tr
td
0.1
0
10
20 30 40 50 60 70 80 90 TA - AMBIENT TEMPERATURE (C)
100
0 -60
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (C)
Fig. 9 Switching Time vs. Ambient Temperature
25 SWITCHING TIME - t(s) 20 15 10 5
tPHL tr td
Fig. 10 Switching Time vs. Ambient Temperature
30 SWITCHING TIME - t(s)
IF = 5mA VCC = 5V RL = 1K RBE = 330K Refer to Figure 13 for switching time circuit
IF = 10mA VCC = 5V RL = 1K RBE = 100K
Refer to Figure 13 for switching time circuit
25 20
tPLH ts tf
tf
15 10 5 0 -60
tr td
tPLH ts
tPHL
0 -60
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (C)
TA - AMBIENT TEMPERATURE (C)
Fig. 11 Switching Time vs. Ambient Temperature
20 SWITCHING TIME - t(s)
IF = 5mA VCC = 5V RL = 1K RBE = 100K Refer to Figure 13 for switching time circuit
Fig. 12 Turn-on Time vs. Base-Emitter Resistance
100 SWITCHING TIME - tPHL, tPLH (s)
tPLH, IF=3mA, RL=3.3K tPLH, IF=1.6mA, RL=4.7K tPLH, IF=1mA, RL=10K
15
tPLH
10
ts
tf
10
tPHL, IF=1mA, RL=10K tPHL, IF=1.6mA, RL=4.7K
5
tPHL
tr
td
tPHL, IF=3mA, RL=3.3K
VCC = 5V VCE = 0.4V TA = 25C
0 -60
-40
-20
0
20
40
60
80
100
1 10
100
1000
10000
TA - AMBIENT TEMPERATURE (C)
BASE RESISTANCE - RBE (k)
(c) 2003 Fairchild Semiconductor Corporation
Page 6 of 11
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TYPICAL ELECTRO-OPTICAL CHARACTERISTICS (TA = 25C Unless Otherwise Specified)
VCC = 5.0 V Pulse Gen ZO = 50 f = 10KHz 10% D.F. 1K VO Pulse Gen ZO = 50 f = 10KHz 10% D.F. VCC = 5.0 V 1K 4.7K
D1 IF monitor 100 330K IF monitor 100 330K VO
D2 D3 D4
tr, tf, td, ts TEST CIRCUIT Figure 13.
tPHL, tPLH TEST CIRCUIT
INPUT 50% (IF) 0 td 90% tPHL tPLH 1.3 V 10% 0 tr ts tf 1.3 V 10% 90%
OUTPUT (VO)
Figure 14. Switching Circuit Waveforms
(c) 2003 Fairchild Semiconductor Corporation
Page 7 of 11
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
Package Dimensions (Through Hole)
PIN 1 ID.
Package Dimensions (Surface Mount)
0.350 (8.89) 0.330 (8.38)
3
2
1
0.270 (6.86) 0.240 (6.10)
PIN 1 ID.
0.270 (6.86) 0.240 (6.10)
SEATING PLANE
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
4
5
6
0.070 (1.78) 0.045 (1.14)
0.300 (7.62) TYP
0.200 (5.08) 0.115 (2.92)
0.200 (5.08) 0.165 (4.18) 0.020 (0.51) MIN 0.100 (2.54) TYP
0.016 (0.41) 0.008 (0.20)
0.154 (3.90) 0.100 (2.54)
0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41)
0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP
0 to 15
0.300 (7.62) TYP
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4" Lead Spacing)
Recommended Pad Layout for Surface Mount Leadform
0.270 (6.86) 0.240 (6.10)
0.070 (1.78)
0.060 (1.52)
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
0.415 (10.54)
0.100 (2.54) 0.295 (7.49) 0.030 (0.76)
SEATING PLANE
0.200 (5.08) 0.135 (3.43)
0.154 (3.90) 0.100 (2.54)
0.004 (0.10) MIN
0.016 (0.40) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP
0 to 15 0.400 (10.16) TYP
Note All dimensions are in inches (millimeters)
(c) 2003 Fairchild Semiconductor Corporation
Page 8 of 11
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
ORDERING INFORMATION
Option S SD W 300 300W 3S 3SD Order Entry Identifier .S .SD .W .300 .300W .3S .3SD Description Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel
MARKING INFORMATION
1
MCT5200 V XX YY K
3 4 5
2 6
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code
(c) 2003 Fairchild Semiconductor Corporation
Page 9 of 11
6/10/03
LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
Carrier Tape Specifications
12.0 0.1 4.85 0.20 0.30 0.05 4.0 0.1 4.0 0.1 O1.55 0.05 1.75 0.10
7.5 0.1 13.2 0.2 9.55 0.20 16.0 0.3
0.1 MAX
10.30 0.20
O1.6 0.1
User Direction of Feed
NOTE All dimensions are in inches (millimeters) Reflow Profile (Black Package, No Suffix)
300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 225C peak
215C, 10-30 s
Time above 183C, 60-150 sec
Ramp up = 3C/sec 3.5 4 4.5
* Peak reflow temperature: 225C (package surface temperature) * Time of temperature higher than 183C for 60-150 seconds * One time soldering reflow is recommended
Time (Minute)
(c) 2003 Fairchild Semiconductor Corporation
Page 10 of 11
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LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
(c) 2003 Fairchild Semiconductor Corporation
Page 11 of 11
6/10/03

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