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APM2512NU
N-Channel Enhancement Mode MOSFET
Features
*
25V/40A, RDS(ON)=9m (typ.) @ VGS=10V RDS(ON)=13m (typ.) @ VGS=4.5V
Pin Description
* * * *
Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
D
Top View of TO-252
Applications
*
G
Power Management in Desktop Computer or DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
APM2512N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code
APM2512N U :
APM2512N XXXXX
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005 1 www.anpec.com.tw
APM2512NU
Absolute Maximum Ratings
Symbol Parameter Rating 25 20 150 -55 to 150 TC=25C TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C 14 100 65 40 25 50 20 2.5 W C/W V C C A Unit
Common Ratings (TA=25C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
Mounted on Large Heat Sink IDP ID PD RJC 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case
2
A A
Mounted on PCB of 1in Pad Area IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 100 65 10 6 2.5 1 50 100 65 7 4 1.6 0.6 75 W C/W W C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient A A
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Electrical Characteristics
Symbol Parameter
(TA = 25C unless otherwise noted)
APM2512NU Min. Typ. Max.
Test Condition
Unit
Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=20V 50 mJ
Static Characteristics BVDSS IDSS VGS(th) IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V, IDS=250A VDS=20V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A, VGS=0V VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 9 13 1.3 1.8 25 1 30 2.5 100 12 20 V A V nA m
RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSD
a
Diode Forward Voltage
0.9
1.3
V pF
Dynamic Characteristics b RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd
Notes: a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing.
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
b
1.1 1560 345 245 10 18 11 47 14 6 33 10
VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6
ns
Gate Charge Characteristics Total Gate Charge
33 VDS=15V, VGS=10V, IDS=20A 4.6 10
43 nC
Gate-Source Charge Gate-Drain Charge
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Typical Characteristics
Power Dissipation
60
50
Drain Current
50
40
40
ID - Drain Current (A)
Ptot - Power (W)
30
30
20
20
10 TC=25 C 0 20 40 60 80 100 120 140 160 180
o
10 TC=25 C,VG=10V 0 0 20 40 60 80 100 120 140 160 180
o
0
Tj - Junction Temperature (C)
Tj - Junction Temperature (C)
Safe Operation Area Normalized Transient Thermal Resistance
300 100
2 1
Thermal Transient Impedance
Rd s(o n) Lim it
Duty = 0.5 0.2
ID - Drain Current (A)
10ms 100ms
10
1s
0.1
0.02 0.01
0.1 0.05
DC
1
0.01
Single Pulse
T =25 C 0.1 c 0.1
o
1
10
70
1E-3 1E-4
Mounted on 1in pad o RJA :50 C/W
2
1E-3
0.01
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Typical Characteristics (Cont.)
Output Characteristics
100 VGS=6,7,8,9,10V 90 80 5V
22 20
Drain-Source On Resistance
RDS(ON) - On - Resistance (m)
18 16 14 12 10 8 6 4
VGS=4.5V
ID - Drain Current (A)
70 60 50
4.5V
4V 40 30 3.5V 20 10 0 0 1 2 3 4 3V 2.5V 5
VGS=10V
2
0
20
40
60
80
100
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
100 90 80
1.6
Gate Threshold Voltage
IDS =250A 1.4
ID - Drain Current (A)
70 60 50 40 30 20 10 0 0 1
Tj=125 C
o
Normalized Threshold Voltage
1.2 1.0 0.8 0.6 0.4 0.2 -50 -25
Tj=25 C Tj=-55 C
o
o
2
3
4
5
6
0
25
50
75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (C)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
1.8 VGS = 10V 1.6 IDS = 20A 10 40
Source-Drain Diode Forward
Normalized On Resistance
IS - Source Current (A)
1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 RON@Tj=25 C: 9m 0 25 50 75 100 125 150
o
Tj=150 C
o
1
Tj=25 C
o
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Tj - Junction Temperature (C)
VSD - Source-Drain Voltage (V)
Capacitance
3000 Frequency=1MHz
10 VDS=15V 9 ID = 20A
Gate Charge
VGS - Gate-source Voltage (V)
25
2500
8 7 6 5 4 3 2 1
C - Capacitance (pF)
2000 Ciss 1500
1000
500 Crss 0 0 5
Coss
10
15
20
0
0
5
10
15
20
25
30
35
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Avalanche Test Circuit and Waveforms
V DS L DUT
tp
V DSX(SUS) V DS
IAS
RG V DD
V DD
tp
IL 0.01
EAS
tAV
Switching Time Test Circuit and Waveforms
V DS RD DUT V GS RG V DD
10%
tp
V DS
90%
V GS td(on) tr td(off) tf
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Package Information
TO-252 (Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H
L1 L b e1 D1 C A1
E1
Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2
Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032
8
Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080
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Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
APM2512NU
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
TP Ramp-up
tp Critical Zone T L to T P
Temperature
TL Tsmax
tL
Tsmin Ramp-down ts Preheat
25
t 25 C to Peak
Time
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds
6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface.
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Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
APM2512NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process - Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 350 <2.5 mm 240 +0/-5C 225 +0/-5C 2.5 mm 225 +0/-5C 225 +0/-5C
Table 2. Pb-free Process - Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm - 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.
Reliability Test Program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
t E Po P P1 D
F W
Bo
Ao
D1
Ko
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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APM2512NU
Carrier Tape & Reel Dimensions(Cont.)
T2
J C A B
T1
Application
A 330 3
B 100 2 D 1.5 +0.1
C 13 0. 5 D1
J 2 0.5 Po
T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1
W 16+ 0.3 - 0.1 Bo 10.4 0.1
P 8 0.1 Ko 2.5 0.1
E 1.75 0.1 t 0.30.05
TO-252
F 7.5 0.1
1.5 0.25 4.0 0.1
(mm)
Cover Tape Dimensions
Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright (c) ANPEC Electronics Corp. Rev. B.2 - Oct., 2005
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