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| Advanced Technical Information PolarHVTM Power MOSFET Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated IXTC 26N50P VDSS = 500 V = 13 A ID25 RDS(on) = 260 m Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C Maximum Ratings 500 500 20 30 13 78 26 40 1.0 10 100 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C V~ N/lb g Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers G = Gate S = Source D = Drain G D S ISOPLUS220TM (IXTC) E153432 Isolated Tab 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1, leads-to-tab Mounting Force 300 2500 11..65/2.5..15 2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 2.5 5.0 100 25 250 260 V V nA A A m AC motor control Advantages Easy assembly Space savings High power density VGS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99227(10/04) IXTC 26N50P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 20 28 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 380 48 20 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 4 (External) 25 58 20 96 VGS= 10 V, VDS = 0.5 VDSS, ID = IT 20 45 S pF pF pF ns ns ns ns nC nC nC 1.25 K/W 0.21 K/W ISOPLUS220 Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = T , pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 26 78 1.5 400 5.0 A A V ns C IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V Note: Test Current IT = 13A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTC 26N50P Fig. 1. Output Characteristics @ 25C 30 27 24 21 VGS = 10V 7V 6V 50 40 6V 30 60 VGS = 10V 7V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 18 15 12 9 6 3 0 0 1 2 3 4 5 6 7 8 5V 4.5V 5.5V I D - Amperes 20 5.5V 10 5V 0 0 3 6 9 12 V D S - Volts Fig. 3. Output Characteristics @ 125C 30 27 24 VGS = 10V 7V 6V 5.5V 3.1 2.8 VGS = 10V V D S - Volts 15 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature I D - Amperes 21 18 15 12 9 6 3 0 0 2 4 6 8 10 12 R D S ( o n ) - Normalized 2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 13A I D = 26A 5V 4.5V 14 16 18 20 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.4 3 VGS = 10V TJ = 125C 27 24 21 2.6 2.2 1.8 1.4 1 0.6 0 5 10 15 20 25 TJ = 25C TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature R D S ( o n ) - Normalized I D - Amperes 30 35 40 45 50 55 60 18 15 12 9 6 3 0 I D - Amperes -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTC 26N50P Fig. 7. Input Adm ittance 40 35 30 55 50 45 40 TJ = -40C 25C 125C Fig. 8. Transconductance g f s - Siemens 4.5 5 5.5 6 6.5 I D - Amperes 25 20 15 10 5 0 3.5 4 35 30 25 20 15 10 5 0 0 TJ = 125C 25C -40C 5 10 15 20 25 30 35 40 45 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 70 60 50 10 9 8 7 VDS = 250V I D = 13A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes VG S - Volts TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1 40 30 20 10 0 6 5 4 3 2 1 0 V S D - Volts Fig. 11. Capacitance 10000 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a 100 R D S(on) Lim it Capacitance - picoFarads C iss 1000 25s I D - Amperes 10 100s 1m s 10m s C oss 100 1 DC TJ = 150C f = 1MHz C rss TC = 25C 0.1 40 10 0 5 10 15 20 25 30 35 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 1000 V D S - V olts IXTC 26N50P Fig. 13. Maximum Transient Therm al Resistance 10.00 R ( t h ) J C - C / W 1.00 0.10 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2004 IXYS All rights reserved |
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