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| Advanced Technical Information PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 75N10P IXTA 75N10P IXTP 75N10P VDSS ID25 RDS(on) = 100 V = 75 A = 25 m TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Maximum Ratings 100 100 20 V V V A A A mJ J V/ns W C C C C C G = Gate S = Source G S (TAB) D = Drain TAB = Drain G DS (TAB) G D (TAB) S TO-220 (IXTP) TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C 75 200 50 30 1.0 10 300 -55 ... +150 150 -55 ... +150 TO-263 (IXTA) 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-3P TO-220 TO-263 (TO-3P / TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. 5.5 4 3 g g g Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 100 2.5 5.0 100 25 250 21 25 V V nA A A m VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. (c) 2004 IXYS All rights reserved DS99158(03/04) IXTA 75N10P IXTP 75N10P IXTQ 75N10P Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 20 28 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 890 275 27 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 10 (External) 53 66 45 74 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 18 40 S pF pF pF ns ns ns ns nC nC nC 0.42 K/W (TO-3P) (TO-220) 0.21 0.25 K/W K/W TO-3P (IXTQ) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 75 200 1.5 120 1.4 A A V ns C TO-220 (IXTA) Outline IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 75 V TO-263 (IXTP) Outline Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 1. Output Characteristics @ 25C 80 70 60 VGS = 10V 9V 120 110 100 90 8V 80 70 60 50 40 30 20 6V 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 10 0 0 1 2 3 4 5 6 7 8 9 10 11 12 6V 7V 8V VGS = 10V 9V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes 50 40 30 20 10 0 7V I D - Amperes V D S - Volts Fig. 3. Output Characteristics @ 125C 80 70 60 VGS = 10V 9V 2.2 2 VGS = 10V V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature R D S ( o n ) - Normalized 1.8 1.6 1.4 1.2 1 0.8 0.6 I D = 37.5A I D = 75A I D - Amperes 50 40 30 20 10 0 0 0.5 1 1.5 2 8V 7V 6V 5V 2.5 3 3.5 4 4.5 -50 -25 0 25 50 75 100 125 150 V D S - Volts Fig. 5. RDS(on) Norm alized to 2.8 2.6 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID VGS = 10V 80 70 60 R D S ( o n ) - Normalized 2.4 2.2 I D - Amperes TJ = 25C 2 1.8 1.6 1.4 1.2 1 0.8 0 20 TJ = 125C 50 40 30 20 10 0 40 I D - Amperes 60 80 100 120 -50 -25 TC - Degrees Centigrade 0 25 50 75 100 125 150 (c) 2004 IXYS All rights reserved IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig. 7. Input Adm ittance 120 105 90 40 36 32 Fig. 8. Transconductance g f s - Siemens 28 24 20 16 12 8 4 0 TJ = -40C 25C 125C I D - Amperes 75 60 45 30 15 0 5 6 7 8 9 1 0 1 1 TJ = 125C 25C -40C 0 20 40 60 80 100 120 140 160 180 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 180 160 10 9 8 7 VDS = 50V I D = 37.5A I G = 10mA I D - Amperes Fig. 10. Gate Charge I S - Amperes 140 120 100 80 60 40 20 0 0.5 0.7 0.9 TJ = 25C TJ = 125C VG S - Volts 1.1 1.3 1.5 1.7 6 5 4 3 2 1 0 V S D - Volts 0 10 20 30 40 50 60 70 80 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area 1000 TJ = 150C R DS(on) Limit C iss TC = 25C 25s 100s 1ms 10 C rss 10ms DC Fig. 11. Capacitance 10000 f = 1MHz Capacitance - picoFarads I D - Amperes 40 100 1000 C oss 100 0 5 10 15 1 V D S - Volts 20 25 30 35 1 10 V D S - Volts 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 75N10P IXTP 75N10P IXTQ 75N10P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.45 0.40 0.35 R ( t h ) J C - C / W 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 1000 Pu ls e W id th - m illis e c o n d s (c) 2004 IXYS All rights reserved |
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