 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Preferred Device Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features http://onsemi.com * High DC Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) -- MJH11018, 17 = 200 Vdc (Min) -- MJH11020, 19 = 250 Vdc (Min) -- MJH11022, 21 Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction Pb-Free Packages are Available* 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150-250 VOLTS, 150 WATTS MARKING DIAGRAM * * * SOT-93 (TO-218) CASE 340D STYLE 1 AYWWG MJH110xx III II IIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III III I I II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIII III IIII II I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII I III I I IIIIIIIIIIIIIIIIII IIII II III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO Max 150 200 250 150 200 250 5.0 15 30 Unit Vdc Collector-Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 Collector-Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 Emitter-Base Voltage Collector Current Base Current VCB Vdc VEB IC IB Vdc Adc Adc - Continuous - Peak (Note 1) 0.5 Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 1.2 W W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 A Y WW G MJH110xx = = = = = Assembly Location Year Work Week Pb-Free Package Device Code xx = 17, 19, 21, 18, 20, 22 ORDERING INFORMATION Device MJH11017 MJH11017G MJH11018 MJH11018G MJH11019 MJH11019G MJH11020 MJH11020G MJH11021 MJH11021G MJH11022 MJH11022G Package SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) SOT-93 SOT-93 (Pb-Free) Shipping 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail 30 Units / Rail THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit Thermal Resistance, Junction-to-Case 0.83 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 Preferred devices are recommended choices for future use and best overall value. 1 July, 2006 - Rev. 6 Publication Order Number: MJH11017/D II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIII I II IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIII IIIIIIIIIII I II I II III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I I II I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 2) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Storage Time Rise Time Delay Time Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) Base-Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) Collector Cutoff Current (VCE = 75 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) (VCE = 125 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 2) (IC = 0.1 Adc, IB = 0) MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Characteristic Characteristic PD, POWER DISSIPATION (WATTS) 160 100 120 140 20 40 60 80 0 0 (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 5.0 V) (See Figure 2) 20 MJH11018, MJH11020, MJH11022 MJH11017, MJH11019, MJH11021 40 60 80 100 120 TC, CASE TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 2 140 VCEO(sus) Symbol Symbol VCE(sat) VBE(sat) VBE(on) ICEO IEBO ICEV Cob hFE hfe fT td ts tr tf 160 NPN Min 150 400 100 150 200 250 2.5 4.4 1.2 3.0 75 - - - - - - - - - - - - Typical 15,000 - PNP Max 400 600 2.5 2.7 0.5 3.8 2.8 2.5 4.0 2.0 0.5 5.0 1.0 1.0 1.0 75 - - - - - mAdc mAdc mAdc Unit Unit Vdc Vdc Vdc Vdc pF ns ms ms ms - - - MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) VCC 100 V RC TUT RB & RC varied to obtain desired current levels D1, must be fast recovery types, e.g.: 1N5825 used above IB 100 mA MSD6100 used below IB 100 mA V2 APPROX +12 V 0 V1 APPROX -8.0 V RB 51 D1 +4.0 V For td and tr, D1 is disconnected and V2 = 0 For NPN test circuit, reverse diode and voltage polarities. SCOPE 25 ms tr, tf 10 ns Duty Cycle = 1.0% Figure 2. Switching Times Test Circuit r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 0.02 0.03 0.05 Figure 3. Thermal Response FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) TC = 25C SINGLE PULSE 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 2.0 3.0 5.0 10 20 30 50 100 150 250 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 20 10 5.0 2.0 1.0 0.5 0.2 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA) http://onsemi.com 3 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) 30 IC, COLLECTOR CURRENT (AMPS) L = 200 mH IC/IB1 50 TC = 100C VBE(off) = 0-5.0 V RBE = 47 W DUTY CYCLE = 10% REVERSE BIAS 20 10 MJH11017, MJH11018 MJH11019, MJH11020 MJH11021, MJH11022 0 0 20 60 100 140 180 220 260 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives RBSOA characteristics. Figure 5. Maximum Rated Reverse Bias Safe Operating Area (RBSOA) PNP 000 000 000 000 000 000 500 200 00 0.2 0.3 -55 C TC = 150C 25C 10,000 VCE = 5.0 V hFE , DC CURRENT GAIN 5000 2000 1000 500 NPN VCE = 5.0 V TC = 150C 25C -55 C 200 0.5 0.7 1.0 3.0 5.0 10 15 100 0.2 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 15 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain http://onsemi.com 4 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PNP VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.0 2.0 3.0 5.0 IC = 15 A IC = 10 A IC = 5.0 A 10 20 30 50 100 200 300 500 IB, BASE CURRENT (mA) 1000 TJ = 25C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4.5 4.0 3.5 3.0 IC = 15 A 2.5 2.0 1.5 1.0 1.0 IC = 5.0 A 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 IB, BASE CURRENT (mA) IC = 10 A TJ = 25C NPN Figure 7. Collector Saturation Region PNP 4.0 3.5 VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0.2 0.3 0.5 0.7 1.0 VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100 2.0 3.0 5.0 7.0 10 20 VBE(sat) @ IC/IB = 100 TJ = 25C VOLTAGE (VOLTS) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 NPN TJ = 25C VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100 0.5 0.7 1.0 2.0 5.0 10 20 0.5 0.2 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 8. "On" Voltages PNP MJH11017 MJH11019 MJH11021 COLLECTOR NPN MJH11018 MJH11020 MJH11022 COLLECTOR BASE BASE EMITTER EMITTER Figure 9. Darlington Schematic http://onsemi.com 5 MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E C B Q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 U S K L 1 2 4 A 3 D V G J H STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MJH11017/D |
Price & Availability of MJH1101706
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |