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| MJD128T4G (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features http://onsemi.com Designed for general purpose amplifier and low speed switching applications. * Monolithic Construction With Built-in Base-Emitter Shunt Resistors * High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc * Epoxy Meets UL 94 V-0 @ 0.125 in. * ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V * This is a Pb-Free Device SILICON POWER TRANSISTOR 8 AMPERES 120 VOLTS, 20 WATTS MARKING DIAGRAM 4 Base 1 12 3 DPAK CASE 369C STYLE 1 Collector 2 Emitter 3 Y WW J128 G = Year = Work Week = Device Code = Pb-Free Package YWW J128G 4 IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Rating Symbol VCEO VCB VEB Continuous Peak IC IB PD PD TJ, Tstg Value 120 120 5 8 16 120 20 0.16 1.75 0.014 -65 to + 150 Unit Vdc Vdc Vdc Adc mAdc W W/C W W/C C Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation* @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range ORDERING INFORMATION Device MJD128T4G Package DPAK (Pb-Free) Shipping 2500/Tape & Reel THERMAL CHARACTERISTICS Characteristic Symbol RqJC RqJA Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII Thermal Resistance, Junction-to-Case 6.25 71.4 C/W C/W Thermal Resistance, Junction-to-Ambient* Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2007 Preferred devices are recommended choices for future use and best overall value. 1 March, 2007 - Rev. 1 Publication Order Number: MJD128/D MJD128T4G (PNP) PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Collector Cutoff Current (VCE = 120 Vdc, IB = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4 Adc, VCE = 4 Vdc) (IC = 8 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 16 mAdc) (IC = 8 Adc, IB = 80 mAdc) Base-Emitter Saturation Voltage (1) (IC = 8 Adc, IB = 80 mAdc) Base-Emitter On Voltage (IC = 4 Adc, VCE = 4 Vdc) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |hfe| 4 - MHz hFE 1000 100 VCE(sat) - - VBE(sat) - 2 4 4.5 Vdc 12,000 - Vdc - VCEO(sus) 120 - Vdc ICEO - 5 mA ICBO - 10 mAdc IEBO - 2 mAdc VBE(on) - 2.8 Vdc Cob - 300 pF Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 300 - - 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. TA TC 2.5 25 2 20 TC TA SURFACE MOUNT 1.5 15 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) 125 150 Figure 1. Power Derating http://onsemi.com 2 MJD128T4G (PNP) TYPICAL ELECTRICAL CHARACTERISTICS VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20,000 VCE = 4 V hFE, DC CURRENT GAIN 10,000 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 -55 C 3 TJ = 25C 2.6 IC = 2 A 4A 6A TJ = 150C 2.2 1.8 1.4 1 0.3 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.5 0.7 1 2 3 5 7 10 20 30 IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA) Figure 2. DC Current Gain V, TEMPERATURE COEFFICIENTS (mV/C) 3 TJ = 25C V, VOLTAGE (VOLTS) 2.5 +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 Figure 3. Collector Saturation Region *IC/IB hFE/3 2 25C to 150C qVC for VCE(sat) -55 C to 25C 25C to 150C 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1 0.5 0.1 qVB for VBE -55 C to 25C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 0.5 1 23 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 5 7 10 Figure 4. "On" Voltages IC, COLLECTOR CURRENT ( A) 105 REVERSE 104 103 102 101 100 10-1 +0.6 +0.4 TJ = 150C 100C 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VCE = 30 V FORWARD hfe , SMALL-SIGNAL CURRENT GAIN 10,000 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 Figure 5. Temperature Coefficients TC = 25C VCE = 4 Vdc IC = 3 Adc PNP NPN 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 Figure 6. Collector Cut-Off Region Figure 7. Small-Signal Current Gain http://onsemi.com 3 MJD128T4G (PNP) 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 Cib 50 30 0.1 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA TUT V2 APPROX +8 V 0 V1 APPROX -12 V tr, tf 10 ns DUTY CYCLE = 1% RB 51 D1 +4V 8 k 120 VCC -30 V RC SCOPE t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 ts tf 25 ms FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V 5 7 10 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMP) Figure 9. Switching Times Test Circuit Figure 10. Switching Times r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) qJC(t) DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.02 0.03 0.05 Figure 11. Thermal Response http://onsemi.com 4 MJD128T4G (PNP) 20 15 10 5 3 2 1 TJ = 150C 1 ms 5 ms BONDING WIRE LIMIT THERMAL LIMIT TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (AMP) 500 ms 100 ms 0.5 0.3 0.2 0.1 dc 0.05 0.03 0.02 100 120 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on T J(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150C. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Maximum Forward Bias Safe Operating REA COLLECTOR BASE 8k 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 5 MJD128T4G (PNP) PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D 2 PL G 0.13 (0.005) M J H T DIM A B C D E F G H J K L R S U V Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MJD128/D |
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