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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR12DCM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors * Small Size * Passivated Die for Reliability and Uniformity * Low Level Triggering and Holding Characteristics * Available in Two Package Styles Surface Mount Lead Form -- Case 369A Miniature Plastic Package -- Straight Leads -- Case 369 G ORDERING INFORMATION * To Obtain "DPAK" in Surface Mount Leadform (Case 369A) Shipped in Sleeves -- No Suffix, i.e. MCR12DCN Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number, i.e. MCR12DCNT4 * To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves -- Add "-1" Suffix to Device Number, i.e. MCR12DCN-1 A MCR12DCM MCR12DCN Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. SCRs 12 AMPERES RMS 600 thru 800 VOLTS A K K A G CASE 369A-13 STYLE 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = -40 to 125C) On-State RMS Current (All Conduction Angles; TC = 90C) Average On-State Current (All Conduction Angles; TC = 90C) Peak Non-Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 90C) Average Gate Power (t = 8.3 msec, TC = 90C) Peak Gate Current (Pulse Width 10 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM VRRM MCR12DCM MCR12DCN IT(RMS) 12 IT(AV) ITSM 100 I2t PGM 5.0 PG(AV) 0.5 IGM TJ Tstg 2.0 -40 to 125 -40 to 150 Amps C 41 A2sec Watts 7.6 600 800 Amps Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes (3) Symbol RqJC RqJA RqJA Max 2.2 88 80 Unit C/W TL 260 C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1997 1 MCR12DCM MCR12DCN ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristics Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Peak On-State Voltage (1) (ITM = 24 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = -40C) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25C) (VD = 12 V, RL = 100 W, TJ = -40C) (VD = 12 V, RL = 100 W, TJ = 125C) Holding Current (VD = 12 V, IT = 200 mA, TJ = 25C) (VD = 12 V, IT = 200 mA, TJ = -40C) Latching Current (VD = 12 V, IG = 20 mA, TJ = 25C) (VD = 12 V, IG = 40 mA, TJ = -40C) Symbol IDRM IRRM TJ = 25C TJ = 125C VTM -- IGT 2.0 -- VGT 0.5 -- 0.2 IH 4.0 -- IL 4.0 -- 22 -- 40 80 22 -- 40 80 mA 0.65 -- -- 1.0 2.0 -- mA 7.0 -- 20 40 Volts 1.4 2.1 mA -- -- -- -- 0.01 5.0 Volts Min Typ Max Unit mA DYNAMIC CHARACTERISTICS Characteristics Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) (1) Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%. Symbol dv/dt 50 200 -- Min Typ Max Unit V/ms 2 Motorola Thyristor Device Data MCR12DCM MCR12DCN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 120 115 110 105 100 95 90 85 0 1.0 16 14 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 120 180 a 90 60 dc a = Conduction Angle a dc a = 30 a = Conduction Angle a = 30 2.0 3.0 60 4.0 90 5.0 120 6.0 180 7.0 8.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 TYPICAL @ TJ = 25C MAXIMUM @ TJ = 125C 10 r(t) , TRANSIENT RESISTANCE (NORMALIZED) 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) MAXIMUM @ TJ = 25C 1.0 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 100 VGT, GATE TRIGGER VOLTAGE (VOLTS) 20 35 50 65 80 95 110 125 I GT, GATE TRIGGER CURRENT (mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 5.0 -40 -25 -10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) 10 1.0 -40 -25 -10 Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 3 MCR12DCM MCR12DCN 100 100 IH , HOLDING CURRENT (mA) 10 IL, LATCHING CURRENT (mA) 5.0 20 35 50 65 80 95 110 125 10 1.0 -40 -25 -10 1.0 -40 -25 -10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 VD = 800 V TJ = 125C STATIC dv/dt (V/ ms) 100 10 100 1000 10 K RGK, GATE-CATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate-Cathode Resistance 4 Motorola Thyristor Device Data MCR12DCM MCR12DCN PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE CASE 369A-13 ISSUE Y Motorola Thyristor Device Data 5 MCR12DCM MCR12DCN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 6 Motorola Thyristor MCR12DCM/D Device Data |
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