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| FQB5N50CF 500V N-Channel MOSFET May 2006 FRFET FQB5N50CF 500V N-Channel MOSFET Features * 5A, 500V, RDS(on) = 1.55 @VGS = 10 V * Low gate charge ( typical 18nC) * Low Crss ( typical 15pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. D D G G S D2-PAK FQB Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) Parameter FQB5N50CF 500 5 3.2 20 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 5 9.6 4.5 96 0.76 -55 to +150 300 Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient FQB5N50CF 1.3 40 62.5 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB5N50CF Rev. A FQB5N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQB5N50CF FQB5N50CF Device FQB5N50CFTM FQB5N50CFTF Package D2-PAK D2-PAK Reel Size 330mm 330mm Tape Width 24mm 24mm Quantity 800 800 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.5A VDS = 40 V, ID = 2.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 500 ------ Typ -0.5 ----- Max Units --10 100 100 -100 V V/C A A nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---1.3 5.2 4.0 1.55 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---480 80 15 625 105 20 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 5A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 250 V, ID = 5A, RG = 25 -------- 12 46 50 48 18 2.2 9.7 35 100 110 105 24 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 5 A VGS = 0 V, IS = 5 A, dIF / dt = 100 A/s (Note 4) ------ ---65 110 5 20 1.4 --- A A V ns nC 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 2 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V 10 1 150C 25C 10 0 10 0 -55C 10 -1 Notes : 1. 250s Pulse Test 2. TC = 25C -1 Notes : 1. VDS = 40V 10 -1 2. 250s Pulse Test 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 4.5 4.0 10 1 RDS(ON) [], Drain-Source On-Resistance 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 VGS = 10V IDR, Reverse Drain Current [A] 10 0 VGS = 20V 150? 25? Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25C 10 15 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 1200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 1000 Crss = Cgd 10 VGS, Gate-Source Voltage [V] VDS = 100V VDS = 250V VDS = 400V Capacitance [pF] 800 Ciss Coss 8 600 6 400 Crss 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz 4 2 Note : ID = 5A 0 -1 10 0 10 0 10 1 0 5 10 15 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250A 0.5 Notes : 1. VGS = 10 V 2. ID = 2.5 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 6 10 2 Operation in This Area is Limited by R DS(on) 10 s 5 ID, Drain Current [A] 10 1 100 s 1ms 10ms 100ms DC * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o ID, Drain Current [A] 3 4 3 10 0 2 1 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 125 o 150 175 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 0 10 D=0.5 Z? JC Thermal Response (t), 0.2 0.1 10 -1 0.05 0.02 0.01 PDM t1 t2 10 -2 single pulse * Notes : 0 1. ZJC(t) = 1.3 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] 4 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET Mechanical Dimensions D2-PAK Dimensions in Millimeters 7 FQB5N50CF Rev. A www.fairchildsemi.com FQB5N50CF 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST(R) ACExTM ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production 8 FQB5N50CF Rev. A www.fairchildsemi.com |
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