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| UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) 1 TO-126 *Pb-free plating product number: 2SC2688L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SC2688-X-T60-A-K 2SC2688L-x-T60-A-K Package TO-126 Pin Assignment 1 2 3 E C B Packing Bulk 2SC2688L-x-T60-A-K (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) K: Bulk (2) refer to Pin Assignment (3) T60: TO-126 (4) x: refer to Classification of hFE (5) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R204-023,A 2SC2688 ABSOLUTE MAXIMUM RATING PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current NPN EPITAXIAL SILICON TRANSISTOR RATINGS UNIT 300 V 300 V 5.0 V 200 mA Ta=25 1.25 W Total Power Dissipation PD TC=25 10 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25) PARAMETER SYMBOL Collector Saturation Voltage VCE(SAT) Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain Bandwidth Product fT Feedback Capacitance Cre Note 1. * Pulsed PW 350s, Duty Cycle 2% TEST CONDITIONS IC=20mA, IB=5.0mA VCB=200V, IE=0 VEB=5.0V, IC=0 VCE=10V, IC=10mA VCE=30V, IE=-10mA VCB=30V, IE=0, f=1.0MHz MIN TYP MAX 1.5 100 100 250 3 UNIT V nA nA MHz pF 40 50 80 80 CLASSIFICATION OF hFE Rank Range N 40 ~ 80 M 60 ~ 120 L 100 ~ 200 K 16 ~ 250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R204-023,A 2SC2688 Open Collector NPN EPITAXIAL SILICON TRANSISTOR BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR TEST CONDITION 1. E-B reverse bias 2.C=2300pF 3. Apply on shot pulse to T.U.T. (Transistor Under the Test) by SW. JUDGEMENT Reject; BVEBO waveform defect As a result if T.U.T. is not rejected, apply higher voltage to capacitor and test again. SW. T.U.T VD C=2 300pF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R204-023,A 2SC2688 TYPICAL CHARACTERISTICS (Ta=25) Total Power Dissipation Vs . Ambinet Temperature NPN EPITAXIAL SILICON TRANSISTOR Total Power Dissipation, PD (W) Total Power Dissipation, PD (W) 1.5 Total Power Dissipation Vs. Ambinet Temperature Free Air 10 8 6 4 2 0 Infinite Heat Sink 1.25 1.0 0.75 0.5 0.25 0 25 50 75 100 125 150 175 Ambient Temperature, Ta () 25 50 75 100 125 150 Ambient Temperature, Ta () 14 Collector Current, I C (mA) Collector Current vs. Collector to Emitter Voltage 3.0 150A Collector Current, IC (mA) Collector Current vs. Collector to Emitter Voltage 30A 12 10 8 6 4 2 2.5 2.0 1.5 1.0 0.5 0 50 100 150 Collector TO Emitter Voltage, VCE (V) 20A IB=10A 100A IB =50A 0 24 6 8 10 12 14 Collector TO Emitter Voltage, VCE (V) Collector Current, I C (mA) DC Current Gain, h FE Collector Current vs. Base to Emitter Voltage 70 VCE=10V 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Base to Emitter Voltage, VBE (V) DC Current Gain vs. Collector Current VCE=10V 200 100 50 10 5 1 0.1 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R204-023,A 2SC2688 TYPICAL CHARACTERISTICS Base Saturation Voltage, V BE (SAT) (V) Collector Saturation Voltage, VCE (SAT) (V) NPN EPITAXIAL SILICON TRANSISTOR 10.0 5.0 1.0 0.5 0.1 0.05 0.01 0.1 IC=10*I B VBE(SAT) Gain Bandwidth Product, fT (MHz) Base And Collector Saturation Voltage vs. Collector Current Gain Banddwidth Product Vs . Emitter Current VCE=30V 200 100 50 VCE(SAT ) 0.5 1 5 10 50 100 5001000 Collector Current, IC (mA) 10 -1 -5 -10 -50 -100 Emitter Current, I E (mA) Feedback Capacitance, Cre (pF) Feedback Capacitance vs.Collector to Base Voltage IE=0 f=1MHz 10 5 1 5 10 1 50 100 Collector to Base Voltage, VCB (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-023,A |
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