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K7P163666A K7P161866A
Document Title
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
512Kx36 & 1Mx18 SRAM
Revision History
Rev. No.
Rev. 0.0 Rev. 0.1
History
- Initial Document - Absolute maximum ratings are changed VDD : 2.815 - > 3.13 VDDQ : 2.815 - > 2.4 VTERM : 2.815 - > VDDQ+0.5 (2.4V MAX) - Recommended DC operating conditions are changed VREF / VCM-CLK : 0.68 - > 0.6, 0.95 - > 0.9 - DC characteristics is changed ISBZZ : 150 - > 128 - AC Characteristics are changed TAVKH / TDVKH / TWVKH / TSVKH : 0.4 / 0.5 / 0.5 - > 0.3 / 0.3 / 0.3 TKHAX / TKHDX / TKHWX / TKHSX : 0.5 / 0.5 / 0.5 - > 0.5 / 0.6 / 0.6
Draft Date
Dec. 2001 Oct. 2002
Remark
Advance Advance
Rev. 0.2
- Recommended DC operating condition is changed Max VDIF-CLK : VDDQ+0.3 -> VDDQ+0.6 - Correct typo VDD -> VDDQ: in MODE CONTROL at page4
Jan. 2003
Advance
Rev. 0.3
Sep. 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
FEATURES
* 512Kx36 or 1Mx18 Organizations. * 2.5V Core/1.5V Output Power Supply (1.9V max VDDQ). * HSTL Input and Output Levels. * Differential, HSTL Clock Inputs K, K. * Synchronous Read and Write Operation * Registered Input and Registered Output * Internal Pipeline Latches to Support Late Write. * Byte Write Capability(four byte write selects, one for each 9bits) * Synchronous or Asynchronous Output Enable. * Power Down Mode via ZZ Signal. * Programmable Impedance Output Drivers. * JTAG 1149.1 Compatible Test Access port. * 119(7x17)Pin Ball Grid Array Package(14mmx22mm). Organization
512Kx36 & 1Mx18 SRAM
512Kx36 & 1Mx18 Synchronous Pipelined SRAM
Maximum Frequency 333MHz 300MHz 250MHz 333MHz 300MHz 250MHz Access Time 1.5 1.6 2.0 1.5 1.6 2.0
Part Number K7P163666A-HC33
512Kx36
K7P163666A-HC30 K7P163666A-HC25 K7P161866A-HC33
1Mx18
K7P161866A-HC30 K7P161866A-HC25
FUNCTIONAL BLOCK DIAGRAM
SA[0:18] or SA[0:19] CK SS SW Latch SWx Register SWx Register Latch SW Register SW Register Read Address Register 1 Write Address Register 0 Row Decoder 512Kx36 or 1Mx18 Array Column Decoder Write/Read Circuit
SWx (x=a, b, c, d) or (x=a, b)
0
1 Data In Register
SS Register
SS Register
Data Out Register
G ZZ K K CK DQx[1:9] (x=a, b, c, d) or (x=a, b)
PIN DESCRIPTION
Pin Name K, K SAn DQn SW SWa SWb SWc SWd ZZ VDD VDDQ Pin Description Differential Clocks Synchronous Address Input Bi-directional Data Bus Synchronous Global Write Enable Synchronous Byte a Write Enable Synchronous Byte b Write Enable Synchronous Byte c Write Enable Synchronous Byte d Write Enable Asynchronous Power Down Core Power Supply Output Power Supply Pin Name VREF M1, M2 G SS TCK TMS TDI TDO ZQ VSS NC Pin Description HSTL Input Reference Voltage Read Protocol Mode Pins ( M1=VSS, M2=VDDQ ) Asynchronous Output Enable Synchronous Select JTAG Test Clock JTAG Test Mode Select JTAG Test Data Input JTAG Test Data Output Output Driver Impedance Control GND No Connection
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
PACKAGE PIN CONFIGURATIONS(TOP VIEW)
K7P163666A(512Kx36)
1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQc8 DQc6 VDDQ DQc3 DQc1 VDDQ DQd1 DQd3 VDDQ DQd6 DQd8 NC NC VDDQ 2 SA13 SA18 SA12 DQc9 DQc7 DQc5 DQc4 DQc2 VDD DQd2 DQd4 DQd5 DQd7 DQd9 SA15 NC TMS 3 SA10 SA9 SA11 VSS VSS VSS SWc VSS VREF VSS SWd VSS VSS VSS M1 SA14 TDI 4 NC NC VDD ZQ SS G NC NC VDD K K SW SA0 SA1 VDD SA16 TCK
512Kx36 & 1Mx18 SRAM
5 SA7 SA8 SA6 VSS VSS VSS SWb VSS VREF VSS SWa VSS VSS VSS M2 SA3 TDO
6 SA4 SA17 SA5 DQb9 DQb7 DQb5 DQb4 DQb2 VDD DQa2 DQa4 DQa5 DQa7 DQa9 SA2 NC NC
7 VDDQ NC NC DQb8 DQb6 VDDQ DQb3 DQb1 VDDQ DQa1 DQa3 VDDQ DQa6 DQa8 NC ZZ VDDQ
K7P161866A(1Mx18)
1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQb1 NC VDDQ NC DQb4 VDDQ NC DQb6 VDDQ DQb8 NC NC NC VDDQ 2 SA13 SA19 SA12 NC DQb2 NC DQb3 NC VDD DQb5 NC DQb7 NC DQb9 SA15 SA18 TMS 3 SA10 SA9 SA11 VSS VSS VSS SWb VSS VREF VSS NC VSS VSS VSS M1 SA14 TDI 4 NC NC VDD ZQ SS G NC NC VDD K K SW SA0 SA1 VDD NC TCK 5 SA7 SA8 SA6 VSS VSS VSS NC VSS VREF VSS SWa VSS VSS VSS M2 SA3 TDO 6 SA4 SA17 SA5 DQa9 NC DQa7 NC DQa5 VDD NC DQa3 NC DQa2 NC SA2 SA16 NC 7 VDDQ NC NC NC DQa8 VDDQ DQa6 NC VDDQ DQa4 NC VDDQ NC DQa1 NC ZZ VDDQ
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
FUNCTION DESCRIPTION
512Kx36 & 1Mx18 SRAM
The K7P163666A and K7P161866A are 18,874,368 bit Synchronous Pipeline Mode SRAM. It is organized as 524,288 words of 36 bits(or 1,048,576 words of 18 bits)and is implemented in SAMSUNGs advanced CMOS technology. Single differential HSTL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.
Read Operation
During reads, the address is registered during the frist clock edge, the internal array is read between this first edge and the second edge, and data is captured in the output register and driven to the CPU during the second clock edge. SS is driven low during this cycle, signaling that the SRAM should drive out the data. During consecutive read cycles where the address is the same, the data output must be held constant without any glitches. This characteristic is because the SRAM will be read by devices that will operate slower than the SRAM frequency and will require multiple SRAM cycles to perform a single read operation.
Write (Stire) Operation
All addresses and SW are sampled on the clock rising edge. SW is low on the rising clock. Write data is sampled on the rising clock, one cycle after write address and SW have been sampled by the SRAM. SS will be driven low during the same cycle that the Address, SW and SW[a:d] are valid to signal that a valid operation is on the Address and Control Input. Pipelined write are supported. This is done by using write data buffers on the SRAM that capture the write addresses on one write cycle, and write the array on the next write cycle. The "next write cycle" can actually be many cycles away, broken by a series of read cycles. Byte writes are supported. The byte write signals SW[a:d] signal which 9-bit bytes will be writen. Timing of SW[a:d] is the same as the SW signal.
Bypass Read Operation
Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have new byte data from the write data buffer and the other bytes from the SRAM array.
Programmable Impedance Output Buffer Operation
This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250 resistor will give an output buffer impedance of 50. The allowable range of RQ is from 175 to 350. Internal circuits evaluate and periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evaluation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations. Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configuration by connecting ZQ to VSS or VDD.
Mode Control
There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDDQ. These mode pins must be set at power-up and must not change during device operation.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-down.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated. Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time.
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
FUNCTION DESCRIPTION
512Kx36 & 1Mx18 SRAM
The K7P163666A and K7P161866A are 18,874,368 bit Dual Mode (supports both Register Register and Late Select Mode) SRAM devices. They are organized as 524,288 words by 36 bits for K7P163666A and 1,048,576 words by 18 bits for K7P161866A, fabricated using Samsung's advanced CMOS technology. Late Write/Pipelined Read(RR) for x36/x18 organizations and Late Write/Late Select Read(LS) for x36 organization are supported. The chip is operated with a single +2.5V power supply and is compatible wtih HSTL input and output. The package is 119(7x17) Plastic Ball Grid Array with balls on a 1.27mm pitch.
Read Operation for Register Register Mode(x36 and x18)
During read operations, addresses and controls are registered during the first rising edge of K clock and then the internal array is read between first and second edges of K clock. Data outputs are updated from output registers off the second rising edge of K clock.
Read Operation for Late Select Mode(x36)
During read operations, addresses(SA) and controls except the Way Select Address(SAS) are registered during the first rising edge of K clock. The internal array(x72 bit data) is read between the first edge and the second edge, and as the Way Select Address(SAS) is registered at the second clock edge, x36 bit data is mux selected before the output register.
Write Operation(Late Write)
During write operations, addresses including the Way Select Address(SAS) and controls are registered at the first rising edge of K clock and data inputs are registered at the following rising edge of K clock. Write addresses and data inputs are stored in the data in registers until the next write operation, and only at the next write opeation are data inputs fully written into SRAM array. Byte write operation is supported using SW[a:d] and the timing of SW[a:d] is the same as the SW signal.
Bypass Read Operation
Since write data is not fully written into the array on first write cycle, there is a need to sense the address in case a future read is to be done from the location that has not been written yet. For this case, the address comparator check to see if the new read address is the same as the contents of the stored write address Latch. If the contents match, the read data must be supplied from the stored write data latch with standard read timing. If there is no match, the read data comes from the SRAM array. The bypassing of the SRAM array occurs on a byte by byte basis. If one byte is written and the other bytes are not, read data from the last written will have new byte data from the write data buffer and the other bytes from the SRAM array.
Programmable Impedance Output Buffer Operation
This HSTL Late Write SRAM has been designed with programmable impedance output buffers. The SRAMs output buffer impedance can be adjusted to match the system data bus impedance, by connecting a external resistor (RQ) between the ZQ pin of the SRAM and VSS. The value of RQ must be five times the value of the intended line impedance driven by the SRAM. For example, a 250 resistor will give an output buffer impedance of 50. The allowable range of RQ is from 175 to 350. Internal circuits evaluate and periodically adjust the output buffer impedance, as the impedance is affected by drifts in supply voltage and temperature. One evaluation occurs every 32 clock cycles, with each evaluation moving the output buffer impedance level only one step at a time toward the optimum level. Impedance updates occur when the SRAM is in High-Z state, and thus are triggered by write and deselect operations. Updates will also be triggered with G HIGH initiated High-Z state, providing the specified G setup and hold times are met. Impedance match is not instantaneous upon power-up. In order to guarantee optimum output driver impedance, the SRAM requires a minimum number of non-read cycles (1,024) after power-up. The output buffers can also be programmed in a minimum impedance configuration by connecting ZQ to VSS or VDD.
Mode Control
There are two mode control select pins (M1 and M2) used to set the proper read protocol. This SRAM supports single clock pipelined operating mode. For proper specified device operation, M1 must be connected to VSS and M2 must be connected to VDD. These mode pins must be set at power-up and must not change during device operation.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-down.
Sleep Mode
Sleep mode is a low power mode initiated by bringing the asynchronous ZZ pin high. During sleep mode, all other inputs are ignored and outputs are brought to a High-Impedance state. Sleep mode current and output High-Z are guaranteed after the specified sleep mode enable time. During sleep mode the memory array data content is preserved. Sleep mode must not be initiated until after all pending operations have completed, as any pending operation is not guaranteed to properly complete after sleep mode is initiated. Normal operations can be resumed by bringing the ZZ pin low, but only after the specified sleep mode recovery time.
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
TRUTH TABLE
K X X ZZ H L L L L L L L L L G X H L L X X X X X X SS X X H L L L L L L L SW X X X H L L L L L L SWa X X X X H L H H H L SWb X X X X H H L H H L SWc X X X X H H H L H L SWd X X X X H H H H L L DQa Hi-Z Hi-Z Hi-Z DQb Hi-Z Hi-Z Hi-Z
512Kx36 & 1Mx18 SRAM
DQc Hi-Z Hi-Z Hi-Z DQd Hi-Z Hi-Z Hi-Z Operation Power Down Mode. No Operation Output Disabled. Output Disabled. No Operation
DOUT DOUT DOUT DOUT Read Cycle Hi-Z DIN Hi-Z Hi-Z Hi-Z DIN Hi-Z Hi-Z DIN Hi-Z Hi-Z DIN Hi-Z Hi-Z Hi-Z DIN Hi-Z DIN Hi-Z Hi-Z Hi-Z Hi-Z DIN DIN No Bytes Written Write first byte Write second byte Write third byte Write fourth byte Write all bytes
NOTE : K & K are complementary
ABSOLUTE MAXIMUM RATINGS
Parameter Core Supply Voltage Relative to VSS Output Supply Voltage Relative to VSS Voltage on any I/O pin Relative to VSS Output Short-Circuit Current Operating Temperature Storage Temperature Symbol VDD VDDQ VTERM IOUT TOPR TSTG Value -0.5 to 3.13 -0.5 to 2.4 -0.5 to VDDQ+0.5 (2.4V MAX) 25 0 to 70 -55 to 125 Unit V V V mA C C
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Parameter Core Power Supply Voltage Output Power Supply Voltage Input High Level Input Low Level Input Reference Voltage Clock Input Signal Voltage Clock Input Differential Voltage Clock Input Common Mode Voltage Symbol VDD VDDQ VIH VIL VREF VIN-CLK VDIF-CLK VCM-CLK Min 2.37 1.4 VREF+0.1 -0.3 0.6 -0.3 0.1 0.6 Typ 2.5 1.5 0.75 0.75 Max 2.63 1.9 VDDQ+0.3 VREF-0.1 0.9 VDDQ+0.3 VDDQ+0.6 0.9 Unit V V V V V V V V Note
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
PIN CAPACITANCE
Parameter Input Capacitance Data Output Capacitance Symbol CIN COUT
512Kx36 & 1Mx18 SRAM
Test Condition VIN=0V VOUT=0V
Min -
Max 4 5
Unit pF pF
NOTE : Periodically sampled and not 100% tested.(TA=25C, f=1MHz)
DC CHARACTERISTICS
Parameter Average Power Supply Operating Current-x36 (VIN=VIH or VIL, ZZ & SS=VIL) Average Power Supply Operating Current-x18 (VIN=VIH or VIL, ZZ & SS=VIL) Power Supply Standby Current (VIN=VIH or VIL, ZZ=VIH) Active Standby Power Supply Current (VIN=VIH or VIL, SS=VIH, ZZ=VIL) Input Leakage Current (VIN=VSS or VDDQ) Output Leakage Current (VOUT=VSS or VDDQ, DQ in High-Z) Output High Voltage(Programmable Impedance Mode) Output Low Voltage(Programmable Impedance Mode) Output High Voltage(IOH=-0.1mA) Output Low Voltage(IOL=0.1mA) Output High Voltage(IOH=-6mA) Output Low Voltage(IOL=6mA) Symbol IDD33 IDD30 IDD25 IDD33 IDD30 IDD25 ISBZZ ISBSS ILI ILO VOH1 VOL1 VOH2 VOL2 VOH3 VOL3 Min Max 700 620 550 650 570 500 128 200 1 1 VDDQ VDDQ/2 VDDQ 0.2 VDDQ 0.4 Unit mA Note 1, 2
-
mA
1, 2
-1 -1 VDDQ/2 VSS VDDQ-0.2 VSS VDDQ-0.4 VSS
mA mA A A V V V V V V
1 1
3,5 4,5 6 6 6 6
NOTE :1. Minimum cycle. IOUT=0mA. 2. 50% read cycles. 3. |IOH|=(VDDQ/2)/(RQ/5)15% @VOH=VDDQ/2 for 175 RQ 350. 4. |IOL|=(VDDQ/2)/(RQ/5)15% @VOL=VDDQ/2 for 175 RQ 350. 5. Programmable Impedance Output Buffer Mode. The ZQ pin is connected to VSS through RQ. 6. Minimum Impedance Output Buffer Mode. The ZQ pin is connected to VSS or VDD.
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
AC TEST CONDITIONS (TA=0 to 70C, VDD=2.37 -2.63V, VDDQ=1.5V)
Parameter Core Power Supply Voltage Output Power Supply Voltage Input High/Low Level Input Reference Level Input Rise/Fall Time Input and Out Timing Reference Level Clock Input Timing Reference Level
NOTE : Parameters are tested with RQ=250 and VDDQ=1.5V.
512Kx36 & 1Mx18 SRAM
Symbol VDD VDDQ VIH/VIL VREF TR/TF
Value 2.37~2.63 1.5 1.25/0.25 0.75 0.5/0.5 0.75 Cross Point
Unit V V V V ns V V
AC TEST OUTPUT LOAD
50 50 25 DQ VDDQ/2 50 50 5pF VDDQ/2 5pF VDDQ/2
AC CHARACTERISTICS
Parameter Clock Cycle Time Clock High Pulse Width Clock Low Pulse Width Clock High to Output Valid Clock High to Output Hold Address Setup Time Address Hold Time Write Data Setup Time Write Data Hold Time SW, SW[a:d] Setup Time SW, SW[a:d] Hold Time SS Setup Time SS Hold Time Clock High to Output Hi-Z Clock High to Output Low-Z G High to Output High-Z G Low to Output Low-Z G Low to Output Valid ZZ High to Power Down(Sleep Time) ZZ Low to Recovery(Wake-up Time) Symbol tKHKH tKHKL tKLKH tKHQV tKHQX tAVKH tKHAX tDVKH tKHDX tWVKH tKHWX tSVKH tKHSX tKHQZ tKHQX1 tGHQZ tGLQX tGLQV tZZE tZZR -33 Min 3.0 1.2 1.2 0.5 0.3 0.5 0.3 0.5 0.3 0.5 0.3 0.5 0.5 0.5 Max 1.5 1.5 1.5 1.5 15 20 Min 3.3 1.3 1.3 0.5 0.3 0.6 0.3 0.6 0.3 0.6 0.3 0.6 0.5 0.5 -30 Max 1.6 1.6 1.6 1.6 15 20 Min 4.0 1.6 1.6 0.5 0.3 0.6 0.3 0.6 0.3 0.6 0.3 0.6 0.5 0.5 -25 Max 2.0 2.0 2.0 2.0 15 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Note
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
512Kx36 & 1Mx18 SRAM
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (SS Controlled, G=Low)
1 2 3 4 5 6 7 8
K
tKHKH tAVKH tKHAX tKHKL tKLKH
SAn
A1
tSVKH
A2
tKHSX
A3
A4
A5
A4
A6
A7
SS
tWVKH tKHWX tWVKH tKHWX
SW
tWVKH tKHWX
SWx
tKHQV tKHQZ tDVKH tKHDX tKHDX tKHQX1 tKHQX
DQn
Q1
Q2
D3
D4
Q5
Q4
NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address.
TIMING WAVEFORMS OF NORMAL ACTIVE CYCLES (G Controlled, SS=Low)
1 2 3 4 5 6 7 8
K
tKHKH
SAn
A1
A2
A3
A4
A5
A4
A6
A7
G
SW
SWx
tGHQZ tGLQV tGLQX
DQn
Q1
Q2
D3
D4
Q5
Q4
NOTE 1. D3 is the input data written in memory location A3. 2. Q4 is the output data read from the write data buffer(not from the cell array), as a result of address A4 being a match from the last write cycle address.
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
TIMING WAVEFORMS OF STANDBY CYCLES
1 2 3 4 5
512Kx36 & 1Mx18 SRAM
6 7 8
K
tKHKH
SAn SS SW SWx
A1
A2
A1
A2
A3
tZZE
tZZR
ZZ
tKHQV tKHQV
DQn
Q1
Q2
Q1
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
512Kx36 & 1Mx18 SRAM
IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG
The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conformance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP controller has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the application of a logic 1, and therefore can be left unconnected. But they may also be tied to VDD through a resistor. TDO should be left unconnected.
JTAG Block Diagram
JTAG Instruction Coding
IR2 IR1 IR0 Instruction 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 TDO Output Notes 1 2 1 3 4 3 3 3 SAMPLE-Z Boundary Scan Register IDCODE Identification Register
SAMPLE-Z Boundary Scan Register BYPASS SAMPLE BYPASS BYPASS BYPASS Bypass Register Boundary Scan Register Bypass Register Bypass Register Bypass Register
SRAM CORE M1 M2
1 1
TDI
BYPASS Reg. Identification Reg. Instruction Reg. Control Signals
TDO
NOTE : 1. Places DQs in Hi-Z in order to sample all input data regardless of other SRAM inputs. 2. TDI is sampled as an input to the first ID register to allow for the serial shift of the external TDI data. 3. Bypass register is initiated to VSS when BYPASS instruction is invoked. The Bypass Register also holds serially loaded TDI when exiting the Shift DR states. 4. SAMPLE instruction does not places DQs in Hi-Z.
TMS TCK
TAP Controller
TAP Controller State Diagram
1 0 Test Logic Reset 0 Run Test Idle
1 1
Select DR 0 Capture DR 0 Shift DR 1 1 Exit1 DR 0 Pause DR 1 Exit2 DR 1 Update DR 0
1
Select IR 0 1 Capture IR
1
0
0 1 Shift IR 1 Exit1 IR 0 Pause IR 1 Exit2 IR 1 Update IR 1 0 0 0 0
0 0
1
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Sep. 2003 Rev 0.3
K7P163666A K7P161866A
SCAN REGISTER DEFINITION
Part 512Kx36 1Mx18 Instruction Register 3 bits 3 bits Bypass Register 1 bits 1 bits
512Kx36 & 1Mx18 SRAM
ID Register 32 bits 32 bits Boundary Scan 70 bits 51 bits
ID REGISTER DEFINITION
Part 512Kx36 1Mx18 Revision Number (31:28) 0000 0000 Part Configuration (27:18) 00111 00100 01000 00011 Vendor Definition (17:12) XXXXXX XXXXXX Samsung JEDEC Code (11: 1) 00001001110 00001001110 Start Bit(0) 1 1
BOUNDARY SCAN EXIT ORDER(x36)
36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 3B 2B 3A 3C 2C 2A 2D 1D 2E 1E 2F 2G 1G 2H 1H 3G 4D 4E 4G 4H 4M 3L 1K 2K 1L 2L 2M 1N 2N 1P 2P 3T 2R 4N 3R SA9 SA18 SA10 SA11 SA12 SA13 DQc9 DQc8 DQc7 DQc6 DQc5 DQc4 DQc3 DQc2 DQc1 SWc ZQ SS NC* NC* SW SWd DQd1 DQd2 DQd3 DQd4 DQd5 DQd6 DQd7 DQd8 DQd9 SA14 SA15 SA0 M1
1 1
BOUNDARY SCAN EXIT ORDER(x18)
35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 46 47 48 49 50 51 2P 3T 2R 4N 2T 3R DQb9 SA14 SA15 SA0 SA18 M1 SA1 SA16 M2 4P 6T 5R 3 2 1 ZZ SA3 SA2 7T 5T 6R 6 5 4 44 45 2M 1N DQb7 DQb8 DQa2 DQa1 6N 7P 8 7 42 43 2K 1L DQb5 DQb6 DQa3 6L 9 35 36 37 38 39 40 41 1H 3G 4D 4E 4G 4H 4M DQb4 SWb ZQ SS NC NC SW G K K SWa DQa4 4F 4K 4L 5L 7K 14 13 12 11 10 34 2G DQb3 DQa6 DQa5 7G 6H 16 15 32 33 1D 2E DQb1 DQb2 DQa8 DQa7 7E 6F 18 17 26 27 28 29 30 31 3B 2B 3A 3C 2C 2A SA9 SA19 SA10 SA11 SA12 SA13 SA8 SA17 SA7 SA6 SA5 SA4 DQa9 5B 6B 5A 5C 6C 6A 6D 25 24 23 22 21 20 19
SA8 SA17 SA7 SA6 SA5 SA4 DQb9 DQb8 DQb7 DQb6 DQb5 DQb4 DQb3 DQb2 DQb1 SWb G K K SWa DQa1 DQa2 DQa3 DQa4 DQa5 DQa6 DQa7 DQa8 DQa9 ZZ SA3 SA2 SA16 SA1 M2
5B 6B 5A 5C 6C 6A 6D 7D 6E 7E 6F 6G 7G 6H 7H 5G 4F 4K 4L 5L 7K 6K 7L 6L 6M 7N 6N 7P 6P 7T 5T 6R 4T 4P 5R
NOTE :1. Pins 4G and 4H are no connection pin to internal chip. The scanned data are fixed to "0" and "1" respectively.
- 12
Sep. 2003 Rev 0.3
K7P163666A K7P161866A
JTAG DC OPERATING CONDITIONS
Parameter Power Supply Voltage Input High Level Input Low Level Output High Voltage(IOH=-2mA) Output Low Voltage(IOL=2mA) Symbol VDD VIH VIL VOH VOL Min 2.37 1.7 -0.3 2.1 VSS
512Kx36 & 1Mx18 SRAM
Typ 2.5 -
Max 2.63 VDD+0.3 0.8 VDD 0.2
Unit V V V V V
Note
NOTE : 1. The input level of SRAM pin is to follow the SRAM DC specification.
JTAG AC TEST CONDITIONS
Parameter Input High/Low Level Input Rise/Fall Time Input and Output Timing Reference Level
NOTE : 1. See SRAM AC test output load on page 7.
Symbol VIH/VIL TR/TF
Min 2.5/0.0 1.0/1.0 1.25
Unit V ns V
Note
1
JTAG AC Characteristics
Parameter TCK Cycle Time TCK High Pulse Width TCK Low Pulse Width TMS Input Setup Time TMS Input Hold Time TDI Input Setup Time TDI Input Hold Time SRAM Input Setup Time SRAM Input Hold Time Clock Low to Output Valid Symbol tCHCH tCHCL tCLCH tMVCH tCHMX tDVCH tCHDX tSVCH tCHSX tCLQV Min 50 20 20 5 5 5 5 5 5 0 Max 10 Unit ns ns ns ns ns ns ns ns ns ns Note
JTAG TIMING DIAGRAM
TCK
tCHCH tMVCH tCHMX tCHCL tCLCH
TMS
tDVCH tCHDX
TDI
tSVCH tCHSX
PI (SRAM)
tCLQV
TDO
- 13
Sep. 2003 Rev 0.3
K7P163666A K7P161866A
119 BGA PACKAGE DIMENSIONS
14.000.10
512Kx36 & 1Mx18 SRAM
1.27
1.27
22.000.10 Indicator of Ball(1A) Location
20.500.10
C1.00
C0.70 0.7500.15
0.600.10 12.500.10
1.50REF 0.600.10
NOTE : 1. All Dimensions are in Millimeters. 2. Solder Ball to PCB Offset : 0.10 MAX. 3. PCB to Cavity Offset : 0.10 MAX.
119 BGA PACKAGE THERMAL CHARACTERISTICS
Parameter Junction to Ambient(at still air) Junction to Case Junction to Board Symbol Theta_JA Theta_JC Theta_JB Thermal Resistance TBD TBD TBD Unit C/W C/W C/W 2W Heating Note 1W Heating
NOTE : 1. Junction temperature can be calculated by : TJ = TA + PD x Theta_JA.
- 14
Sep. 2003 Rev 0.3

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