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| TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (typ) 2 1 A D 3 E 5 I F 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W - 28V - 400MHz PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN N M H J K * SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DH PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 13.97 5.72 45 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 Tol. 0.010 0.005 5 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 PIN 2 PIN 4 * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 13 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 Power Dissipation Drain - Source Breakdown Voltage * Gate - Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 350W 70V 20V 20A -65 to 150C 200C D1015UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 125W VDS = 28V f = 500MHz IDQ = 1.6A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.2 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 70 Typ. Max. Unit V 4 1 7 mA mA V S dB % -- VGS(th) Gate Threshold Voltage* TOTAL DEVICE h VSWR Load Mismatch Tolerance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance PER SIDE VDS = 28V VDS = 28V VDS = 28V 240 120 10 pF pF pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 0.5C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 D1015UK 3RXW : 'UDLQ(IILFLHQF\ 3RXW : 3LQ: 3LQ: I 0+] ,GT $ 9GV 9 I 0+] ,GT $ 9GV 9 *DLQ G% 3RXW 'UDLQ(IILFLHQF\ 3RXW *DLQ Figure 1 Power Output and Efficiency vs. Input Power Figure 2 Power Output and Gain vs. Input Power D1015UK ,0' G%F OPTIMUM SOURCE AND LOAD IMPEDANCE I 0+] I 0+] ,GT $ 9GV 9 3RXW:3(3 Frequency MHz 400 ZS W ZL W 1.7 - j0.1 2.7 - j1 ,0' Figure 3 Power Output and Gain vs. Input Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 D1015UK 100nF +28V G a te -B ia s 5 .6 K 100nF 5 x 5m m c o n ta c t p a d 5x5mm c o n ta c t p a d 100uF 100 L1 L2 T2 2 -1 8 p F T3 30pF T5 D 1015U K 5x5mm c o n ta c t p a d 680pF D 1015U K 30pF 2 -1 8 p F T4 680pF 10nF 3K 91pF T1 2 -1 8 p F 91pF 5 x 5m m c o n ta c t p a d T6 2 -1 8 p F D1015UK Test Fixture T1 T2, 3 T4,5 T6 L1 L2 12cm 50 ohm UT85 semi-rigid coax on ferrite core 7.5cm 15 ohm UT85-15 semi-rigid coax 7cm 15 ohm UT85-15 semi-rigid coax 11cm 50 ohm UT85 semi-rigid coax on ferrite core 6.5 turns 25swg enamelled copper wire on Fair-Rite FT50B-43 core 6.5 turns 25swg enamelled copper wire, internal diameter Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 11/00 |
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