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| BC 517 NPN Silicon Darlington Transistor High current gain q High collector current q Complementary type: BC 516 (PNP) q 2 1 1 3 BC 517 Type BC 517 Marking - Ordering Code Q62702-C825 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 40 10 500 800 100 200 625 150 - 65 ... + 150 Unit V mA mW C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm. Semiconductor Group 1 5.91 BC 517 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 A Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz fT Cobo - - 150 3.5 - - MHz pF V(BR)CE0 V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE VCEsat VBE - - - - 100 10 100 - 1 1.4 nA A Values typ. max. Unit 30 40 10 - - - - - - V nA - V 30 000 - - - - - 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 2 BC 517 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 3 BC 517 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000, parameter = TA Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000, parameter = TA DC current gain hFE = f (IC) VCE = 2 V, parameter = TA Capacitance C = f (VEB, VCB) Semiconductor Group 4 |
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