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| 2SC5866 Transistor Medium power transistor (60V, 2A) 2SC5866 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 !External dimensions (Units : mm) TSMT3 0.95 0.95 (1) 2.8 1.6 1.9 0.4 (3) (2) 2.9 1.0MAX 0.85 0.16 0.1 (1)Base (2)Emitter (3)Collector 0.3 0.6 Each lead has same dimensions Abbreviated symbol : VL !Applications Low frequency amplifier High speed switching !Structure NPN Silicon epitaxial planar transistor !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5866 Taping TL 3000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature 1 Pw=10ms 2 Each terminal mounted on a recommended land. Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 60 60 6 2 4 500 150 -55~+150 Unit V V V A A mW C C 1 2 0 0.7 1/3 2SC5866 Transistor !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 60 60 6 - - - 120 - - - - - Typ. - - - - - 200 - 200 10 50 120 35 Max. - - - 1.0 1.0 500 390 - - - - - Unit V V V A A mV - MHz pF ns ns ns IC=100A IC=1mA IE=100A VCB=40V VEB=4V IC=1A, IB=0.1A 1 VCE=2V, IC=100mA VCE=10V, IE= -100mA, f=10MHz1 VCB=10V, IE=0mA, f=1MHz IC=2A, IB1=2000mA IB2= -200mA VCC 25V 2 Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ton Tstg Tf 1 Non repetitive pulse 2 See switching charactaristics measurement circuits !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves 10 1ms 1000 Ta=25C VCC=25V IC/IB=10/1 1000 VCE=2V Ta=125C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 10ms Tstg 1 100ms SWITCHING TIME (ns) 100 Ta= -40C Ta=25C DC 0.1 100 Tf Ton 10 0.01 Single non repoetitive pulse 0.001 0.01 0.1 1 10 100 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 COLLECTOR EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe operating area 1000 Fig.2 Switching Time 10 Fig.3 DC current gain vs. collector current 10 Ta=25C Ta=25C IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) VCE=5V DC CURRENT GAIN : hFE 100 VCE=2V VCE=3V 1 Ta=125C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) 1 10 0.1 Ta=25C Ta= -40C 0.1 IC/IB=20/1 IC/IB=10/1 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. Collector Current 2/3 2SC5866 Transistor 10 IC/IB=10/1 TRANSITION FREQUENCY : FT (MHz) 10 VCE=2V 1000 Ta=25C VCE=10V BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Ta= -40C 1 COLLECTOR CURRENT : IC (A) 1 Ta=125C 100 Ta=25C Ta=125C 0.1 0.1 Ta=25C 10 Ta= -40C 0.01 0.01 0.001 0.01 0.1 1 10 0 0.5 1 1.5 1 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Ground emitter propagation characteristics Fig.9 Transition frequency COLLECTOR OUTPUT CAPACITANCE : CoB (pF) 100 Ta=25C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance !Switching characteristics measurement circuits RL=12.5 VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2 3/3 |
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