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2N3903 2N3903 C BE TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3903 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 2001 Fairchild Semiconductor Corporation 2N3903, Rev A 2N3903 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current I C = 1.0 mA, IB = 0 I C = 10 A, I E = 0 I E = 10 A, IC = 0 VCE = 30 V, VOB = 3.0 V VCE = 30 V, VOB = 3.0 V 40 60 6.0 50 50 V V V nA nA z ICEX IBL ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 0.1 mA VCE = 1.0 V, IC = 1.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 50 mA VCE = 1.0 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 20 35 50 30 15 150 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS Cob Cib hfe hfe hie hre hoe NF Output Capacitance Input Capacitance Small-Signal Current Gain Small-Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance Noise Figure VCE = 5.0 V, IC = 100 A, RS = 1.0 k, BW = 10 Hz to 15.7 kHz VCB = 5.0 V, f = 100 kHz VEB = 0.5 V, f = 100 kHz IC = 10 mA, VCE = 20 V, f = 100 MHz VCE = 10 V, IC = 1.0 mA f = 1.0 kHz 2.5 50 1.0 0.1 1.0 200 8.0 5.0 40 6.0 k x 10 mhos dB -4 4.0 8.0 pF pF SWITCHING CHARACTERISTICS td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3.0 V, IC = 10 mA, I B1 = 1.0 mA , Vob ( off ) = 0.5 V VCC = 3.0 V, IC = 10 mA I B1 = IB2 = 1.0 mA 35 35 175 50 ns ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2N3903 NPN General Purpose Amplifier (continued) Typical Characteristics 500 400 125 C V CE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.15 = 10 125 C 300 25 C 0.1 25 C 200 100 0 0.1 - 40 C 0.05 - 40 C 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C 25 C 0.8 - 40 C 25 C 0.6 125 C 0.6 125 C 0.4 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 2N3903 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 I C = 100 A, R S = 500 Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) I C = 1.0 mA I C = 1.0 mA R S = 200 I C = 50 A R S = 1.0 k I C = 0.5 mA R S = 200 V CE = 5.0V 10 I C = 5.0 mA 8 6 4 2 0 0.1 I C = 50 A I C = 100 A 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( k ) 100 Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 h fe PD - POWER DISSIPATION (W) Power Dissipation vs Ambient Temperature 0 20 40 60 80 100 120 140 160 180 1000 1 - CURRENT GAIN (dB) SOT-223 0.75 - DEGREES TO-92 0.5 SOT-23 0.25 h V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) fe 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 Turn-On Time vs Collector Current 500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Ic 10 Rise Time vs Collector Current 500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 = Ic 10 100 T J = 125C T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 2N3903 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current 500 t S - STORAGE TIME (ns) T J = 25C Fall Time vs Collector Current 500 I B1 = I B2 = t f - FALL TIME (ns) T J = 125C Ic 10 I B1 = I B2 = Ic 10 VCC = 40V 100 T J = 125C 100 T J = 25C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Current Gain V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE ( mhos) 500 100 Output Admittance V CE = 10 V f = 1.0 kHz T A = 25oC h fe - CURRENT GAIN 100 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 h re - VOLTAGE FEEDBACK RATIO (x10 100 h ie - INPUT IMPEDANCE (k ) _4 ) Input Impedance V CE = 10 V f = 1.0 kHz T A = 25oC Voltage Feedback Ratio 10 7 5 4 3 2 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 2N3903 NPN General Purpose Amplifier (continued) Test Circuits 3.0 V 300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 K 275 C1 < 4.0 pF FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 s t1 10.9 V 275 Duty Cycle = 2% 0 10 K C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 HTB:B QTY: 10000 See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: QA REV: B2 FSCINT Label (FSCINT) 5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 TO-92 TNR/AMMO PACKING INFROMATION Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label L34Z NO LEADCLIP 2.0 K / BOX 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option (c)2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option "A" (H) Machine Option "E" (J) Style "A", D26Z, D70Z (s/h) Style "E", D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha H1 HO d L L1 W1 S WO W2 W t t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max) User Direction of Feed TO-92 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Label Customized Label D2 Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches D1 D2 D2 D3 D4 W1 W2 W3 13.975 1.160 0.650 3.100 2.700 0.370 1.630 14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090 W2 D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 (c)2000 Fairchild Semiconductor International January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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