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| MS2575 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW DESCRIPTION KEY FEATURES W W W.Microsemi .COM The MS2575 is a medium power Class C transistor designed specifically for pulsed L-Band avionics applications. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2575 is housed in the IMPAC package with internal input matching. IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com Refractory/Gold Metallization Emitter Site Ballasted :1 VSWR Capability Low Thermal Resistance Input Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 35 W Min. GP = 10.7 dB Gain APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Symbol PDISS IC VCC TJ TSTG Parameter Power Dissipation (T C 100C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA Value 150 3.0 55 250 -65 to +150 Unit W A V C C RTH(j-c) Note: Junction-Case Thermal Resistance 1.0 C/W Applies only to rated RF amplifier operation Thermal Resistance determined by Infra-Red Scanning of Hot Spot Junction Temperature at rated RF operating conditions. PIN CONNECTION 1 MS2575 MS2575 4 3 2 1. COLLECTOR 3. EMITTER 2. BASE 4. BASE Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 MS2575 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW W W W.Microsemi .COM STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol BVCBO BVEBO BVCER ICES hFE IC = 10 mA IE = 1 mA IC = 10 mA VBE = 0 V VCE = 5 V Test Conditions IE = 0 mA IC = 0 V RBE = 10 vCE = 50 V IC = 500 mA Min. 65 3.5 65 15 MS2575 Typ. Max. Units V V V mA 5 120 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol POUT c GP Note: Test Conditions f = 1025 - 1150 MHz PIN = 3.0 W VCC = 50 V f = 1025 - 1150 MHz PIN = 3.0 W VCC = 50 V f = 1025 - 1150 MHz PIN = 3.0 W VCC = 50 V Min. 35 10.7 43 MS2575 Typ. 40 11.2 48 Max. Units W % dB Pulse width = 10Sec Duty Cycle = 1% ELECTRICALS ELECTRICALS Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 2 MS2575 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW PACKAGE STYLE - M115 W W W.Microsemi .COM PACKAGE DATTA PACKAGE DATTA Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 3 MS2575 RF PRODUCTS DIVISION RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW W W W.Microsemi .COM NOTES NOTES Copyright 2000 MSC1666.PDF 2001-01-24 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 4 |
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