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| MBR2535CT - MBR2560CT 30A SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 4) 1 2 3 TO-220AB L B C D K A M Dim A B C D E G H G Min 14.48 10.00 2.54 5.90 2.80 12.70 2.40 0.69 3.54 4.07 1.15 0.30 2.04 Max 15.75 10.40 3.43 6.40 3.93 14.27 2.70 0.93 3.78 4.82 1.39 0.50 2.79 Mechanical Data * * * * * * * Case: TO-220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 Polarity: As Marked on Body Marking: Type Number Weight: 2.24 grams (approx.) J E N J K L M N P HH Pin 1 Pin 2 Pin 3 P Case All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 130C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak Repetitive Reverse Surge Current (Note 3) Forward Voltage Drop @ IF = 15.0A, TC = 25C @ IF = 15.0A, TC = 125C @ IF = 30.0A, TC = 25C @ IF = 30.0A, TC = 125C @ TC = 25C @ TC = 125C Symbol VRRM VRWM VR VR(RMS) IO IFSM IRRM VFM @ TA = 25C unless otherwise specified MBR2535CT 35 25 MBR2545CT 45 32 30 MBR2550CT 50 35 MBR2560CT 60 42 Unit V V A A 150 1.0 3/4 3/4 0.82 0.73 0.2 40 750 1.5 -65 to +150 0.5 0.75 0.65 3/4 3/4 1.0 50 500 A V Peak Reverse Current at Rated DC Blocking Voltage Typical Total Capacitance (Note 2) IRM CT RqJC Tj, TSTG mA pF C/W C Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. 3. 2.0ms pulse width, f = 1.0KHz. 4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS31036 Rev. 6 - 2 1 of 2 www.diodes.com MBR2535CT - MBR2560CT a Diodes Incorporated 24 IF, INSTANTANEOUS FORWARD CURRENT (A) 30 50 I(AV), AVERAGE RECTIFIED CURRENT (A) 10 Tj = 150 C Tj = 25 C 18 1.0 12 0.1 MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT 6 0 0 50 100 150 TC, CASE TEMPERATURE ( C) Fig. 1 Forward Derating Curve 0.01 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 10000 IFSM, PEAK FORWARD SURGE CURRENT (A) 150 8.3 ms single half-sine-wave JEDEC method Tj = 25 C f = 1.0MHz 100 CT, TOTAL CAPACITANCE (pF) 1000 50 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 100 0.1 MBR2535CT & MBR2545CT MBR2550CT & MBR2560CT 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Total Capacitance (per element) Ordering Information Device MBR25xxCT* (Note 5) Packaging TO-220AB Shipping 50/Tube * xx = Device type, e.g. MBR2545CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS31036 Rev. 6 - 2 2 of 2 www.diodes.com MBR2535CT - MBR2560CT |
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