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| PD -94313C IRG4MC30F INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max =1.7V @VGE = 15V, IC = 15A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max. 600 28 15 112 112 20 75 30 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) Units V A V W C g Thermal Resistance Parameter R thJC Junction-to-Case Min Typ Max Units -- -- 1.67 C/W Test Conditions www.irf.com 1 02/08/02 IRG4MC30F Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Emitter-to-Collector Breakdown Voltage S 18 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.63 --- --- VCE(ON) Collector-to-Emitter Saturation Voltage --- --- --- --- VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -11 gfe Forward Transconductance T 14 --- --- --- ICES Zero Gate Voltage Collector Current --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 1.0 mA --- V VGE = 0V, IC = 1.0 A --- V/C VGE = 0V, IC = 1.0 mA VGE = 15V 1.7 IC = 15A 2.2 V IC = 28A See Fig.2, 5 2.7 IC = 15A , TJ = 125C 6.0 VCE = VGE, IC = 1.0 mA --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = 15A 50 VGE = 0V, VCE = 480V A 1000 VGE = 0V, VCE = 480V, TJ = 125C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Ets td(on) tr td(off) tr Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Rise Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 77 IC = 15A 12 nC VCC = 300V See Fig. 8 24 VGE = 15V 42 TJ = 25C 30 IC = 15A, VCC = 480V ns 300 VGE = 15V, RG = 7.5 300 Energy losses include "tail" 2.0 mJ See Fig. 10, 11, 13, 14 25 TJ = 125C, 20 ns IC = 15A, VCC = 480V 450 VGE = 15V, RG = 7.5 550 Energy losses include "tail" 3.0 mJ See Fig. 13, 14 --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- 1100 --- VGE = 0V --- 74 --- pF VCC = 30V See Fig. 7 --- 14 --- = 1.0MHz Typ. --- --- --- --- --- --- --- --- --- --- --- --- --- 6.8 Cies Coes Cres Notes: Input Capacitance Output Capacitance Reverse Transfer Capacitance Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. R VCC = 80%(VCES), VGE = 20V, L = 100H, RG = 7.5, (See fig. 13a) 2 www.irf.com IRG4MC30F 40 Square wave: 60% of rated voltage Triangular wave: 30 Load Current ( A ) Ideal diodes Clamp voltage: 80% of rated 20 10 For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 19W 0.1 1 10 100 0 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 I C , Collector-to-Emitter Current (A) 100 I C , Collector-to-Emitter Current (A) 100 TJ = 150 C 10 10 TJ = 150 C GE TJ = 25 C V = 15V 20s PULSE WIDTH 1 10 TJ = 25 C V = 50V 5s PULSE WIDTH CC 5 10 15 20 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4MC30F 30 2.5 VGE = 15V 80s PULSE WIDTH Maximum DC Collector Current(A) 25 VCE , Collector-to Emitter Voltage (V) IC = 30A 20 2.0 15 IC = 15A 10 1.5 IC = 7.5A 5 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature ( C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D =t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.1 0.001 0.01 1 P DM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4MC30F 2000 VGE , Gate-to-Emitter Voltage (V) 1600 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 300V 400V I C = 15A 16 C, Capacitance (pF) Cies 1200 12 800 8 C oes 400 4 C res 0 1 10 100 0 0 10 20 30 40 50 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.55 VCC = 480V VGE = 15V 100 RG = 7.5 VGE = 15V Total Switching Losses (mJ) 1.50 Total Switching Losses (mJ) TJ = 25C I C = 15A VCC = 480V 10 IC = 30A IC = 15A IC = 7.5A 1.45 1 1.40 1.35 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance ( ) T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4MC30F 6.0 RG = 7.5 TJ = 125C 150C VGE = 15V VCC = 480V 4.0 1000 5.0 IC, Collector-to-Emitter Current (A) VGE = 20V T J = 125 Total Switching Losses (mJ) 100 3.0 SAFE OPERATING AREA 10 2.0 1.0 0.0 5 10 15 20 25 30 1 0.1 1 10 100 1000 IC , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4MC30F L 50V 1 00 0V VC * D .U .T. RL = 0 - 720V 720V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 720V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4MC30F Case Outline and Dimensions -- TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] C 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A 3X 3.81 [.150] 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 2X 3.81 [.150] NOTE S: 1. DIME NSIONING & T OLERANCING PER ASME Y14.5M-1994. 2. ALL DIME NSIONS ARE SHOWN IN MILLIMETE RS [INCHES]. 3. CONT ROLLING DIMENSION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. PIN ASSIGNMENTS 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com |
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