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Power Transistors
2SC5128
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.60.2
s Features
q q q q
3.20.1
9.90.3
2.90.2
4.10.2 8.00.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25C)
Ratings 800 800 500 8 10 5 3 40 2 150 -55 to +150 Unit V V V V A A A W C C
15.00.3
3.00.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg
13.7-0.2
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
7
1:Base 2:Collector 3:Emitter TO-220E Full Pack Package
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 2A IC = 2A, IB = 0.4A IC = 2A, IB = 0.4A VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 0.4A, IB2 = - 0.8A, VCC = 200V 20 1.0 3.0 0.3 500 15 8 1.0 1.5 V V MHz s s s min typ max 100 100 Unit A A V
1
Power Transistors
PC -- Ta
60 6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C 5 IB=800mA 700mA 600mA 500mA 400mA 300mA 200mA 100mA 2 50mA
2SC5128
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 25C 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C
VCE(sat) -- IC
Collector power dissipation PC (W)
50 (1)
40
Collector current IC (A)
4
30
3
20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4)
10
1
100C 0.1 0.3 1 3 10
0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100
hFE -- IC
IC/IB=5 1000 VCE=5V 100
fT -- IC
VCE=10V f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
30
300
Transition frequency fT (MHz)
1 3 10
30
10
100 TC=100C 30 25C -25C 10
10
3 25C TC=-25C
3
1
1
100C 0.3
3
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
1 0.01 0.03
0.1
0.3
0.1 0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob -- VCB
1000 100 IE=0 f=1MHz TC=25C 30
ton, tstg, tf -- IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg
Area of safe operation (ASO)
30 10 ICP IC t=0.5ms 1ms 10ms DC
Collector output capacitance Cob (pF)
Switching time ton,tstg,tf (s)
300
Collector current IC (A)
8
10 3 1 ton 0.3 0.1 0.03
3 1 0.3 0.1 0.03 0.01 0.003 Non repetitive pulse TC=25C 1 3 10 30 100
100
30
10
tf
3
1 1 3 10 30 100
0.01 0 1 2 3 4 5 6 7
300
1000
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Area of safe operation, reverse bias ASO
8 7 Lcoil=50H IC/IB=5 (IB1=-IB2) TC100C
2SC5128
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC
Collector current IC (A)
6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800
-IB2
VCC
tW
Vclamp
Collector to emitter voltage VCE (V)
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
Thermal resistance Rth(t) (C/W)
1000
100
(1)
10
(2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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