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KSD1021
KSD1021
Audio Frequency Power Amplifier
* Complement to KSB811 * Collector Current : IC=1A * Collector Dissipation : PC=350mW
1
TO-92S
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 40 30 5 1 350 150 -55 ~ 150 Units V V V A mW C C
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Output Capacitance Test Condition IC=100A, IE=0 IC=10mA, IB=0 IE=100A, IC=0 VCB=30V, IE=0 VCE=1V, IC=100mA IC=1A, IB=0.1A IC=1A, IB=0.1A VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 130 16 120 Min. 40 30 5 0.1 400 0.5 1.2 V V MHz pF Typ. Max. Units V V V A
hFE Classification
Classification hFE Y 120 ~ 240 G 200 ~ 400
(c)2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
KSD1021
Typical Characteristics
1.0 0.9
1000
VCE = 1V
IB = 5.0mA IB = 4.5mA IB = 4.0mA IB = 3.5mA IB = 3.0mA
IC[A], COLLECTOR CURRENT
0.8 0.7 0.6
hFE, DC CURRENT GAIN
9 10
100
IB = 2.5mA
0.5
IB = 2.0mA
0.4
IB = 1.5mA
0.3 0.2
10
IB = 1.0mA IB = 0.5mA
0.1 0.0 0 1 2 3 4 5 6 7 8 1 1 10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
100
f=1MHz IE=0
1
VBE(sat)
Cob[pF], CAPACITANCE
10 100 1000
10
0.1
VCE(sat)
0.01 1
1 1 10 100
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage :
Figure 4. Collector Output Capacitance
1000
500
VCE = 6V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
450
PC[mW], POWER DISSIPATION
-1 -10 -100 -1000
400 350 300 250 200 150 100 50 0 0 25 50
o
100
10
1
75
100
125
150
175
200
225
250
IC[mA], COLLECTOR CURRENT
Ta[ C], AMBIENT TEMPERATURE
Figure 5. Current Gain Bandwidth Product
Figure 6. Power Derating
(c)2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
KSD1021
Package Dimensions
TO-92S
4.00 0.20 2.31 0.20
0.66 MAX.
(1.10)
0.49 0.10
1.27TYP [1.270.20] 3.72 0.20
1.27TYP [1.270.20]
14.47 0.30
3.70 0.20
0.35 -0.05
+0.10
2.86 0.20
0.77 0.10
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. B1, April 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM i-LoTM FACTTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I10

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