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 KSC2982 NPN Epitaxial Silicon Transistor
July 2005
KSC2982
NPN Epitaxial Silicon Transistor
Strobe Flash & Medium Power Amplifier
* Excellent hFE Linearity : hFE1=140 ~ 600 * Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V * Collector Dissipation : PC=1~2W in Mounted on Ceramic Board
Marking
29 PY
1
82 WW
Weekly code Year code hFE grage
SOT-89
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCBO VCES VCEO VEBO IC ICP IB IBP PC P C* TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) * Base Current (DC) Base Current (Pulse) *
Ta = 25C unless otherwise noted
Parameter
Value
30 30 10 6 2 4 0.4 0.8 500 1,000 150 -55 ~ 150
Units
V V V V A A A A mW mW C C
Collector Power Dissipation Junction Temperature Storage Temperature
* PW 10ms, Duty Cycle 30% Mounted on Ceramic Board (250mm2 x 0.8mm)
(c)2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSC2982 Rev. B3
KSC2982 NPN Epitaxial Silicon Transistor
Electrical Characteristics T
Symbol
BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob
a=
25C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance
Test Condition
IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCB = 30V, IE = 0 VBE = 6V, IC = 0 VCE = 1V, IC = 0.5A VCE = 1V, IC = 2A IC = 2A, IB = 50mA VCE = 1V, IC = 2A VCE = 1V, IC = 2A VCB = 10V, IE = 0, f = 1MHz
Min.
10 6
Typ.
Max.
Units
V V
100 100 140 70 600 140 0.2 0.86 150 27 0.5 1.5
nA nA
V V MHz pF
hFE Classification
Classification
hFE1
A
140 ~ 240
B
200 ~ 330
C
300 ~ 450
D
420 ~ 600
Package Marking and Ordering Information
Device Marking
2982
Device
KSC2982
Package
SOT-89
Reel Size
13"
Tape Width
--
Quantity
4,000
KSC2982 Rev. B3
2
www.fairchildsemi.com
KSC2982 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
4
Figure 2. DC Current Gain
1,000
IB = 60mA IB = 25mA IB = 15mA
VCE=1V
IC[A], COLLECTOR CURRENT
IB = 10mA
2
hFE, DC CURRENT GAIN
3
100
IB = 5mA
1
0
IB = 0mA
0 1 2 3 4
10 0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. DCollector-Emitter Saturation Voltage
1
Figure 4. Base-Emitter On Voltage
1.6
IC=10 IB
VCE(sat)[V], SATURATION VOLTAGE
PC[W], POWER DISSIPATION
1.2
0.1
0.8
M ou nt ed
on
Ce ra m ic Bo ar d
0.4
(2 50 m m
2
x
0. 8m m )
0.01 0.01
0.1
1
10
0.0
0
50
o
100
150
200
IC[A], COLLECTOR CURRENT
TC[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
10
Figure 6. Power Derating
1.6
IC MAX. (Pulse)
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
IC MAX. (DC)
1
10 0m s
10 m s
TA=25 C Single Pulse
1.2
o
0.8
M ou nt ed
on
VCEO MAX.
0.1
Ce ra m ic Bo ar d
0.4
(2 50 m m2 x
0. 8m m )
0.01 0.1
1
10
100
0.0
0
50
o
100
150
200
VCE[V], COLLECTOR-EMITTER VOLTAGE
TC[ C], CASE TEMPERATURE
KSC2982 Rev. B3
3
www.fairchildsemi.com
KSC2982 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
4.50 0.20 1.65 0.10 C0.2
(0.50)
1.50 0.20 (0.40)
0.20
2.50
0.50 0.10 1.50 TYP 1.50 TYP
0.40 0.10 0.40
+0.10 -0.05
(1.10)
4.10
0.20
Dimensions in Millimeters
KSC2982 Rev. B3
4
www.fairchildsemi.com
KSC2982 NPN Epitaxial Silicon Transistor
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM
Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM
PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
5 KSC2982 Rev. B3
www.fairchildsemi.com


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