 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA General Description KHB019N20P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies. A O C F E G B Q I FEATURES VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 9.9 + 0.2 A 15.95 MAX B 1.3+0.1/-0.05 C _ D 0.8 + 0.1 _ E 3.6 + 0.2 _ F 2.8 + 0.1 3.7 G H 0.5+0.1/-0.05 1.5 I _ 13.08 + 0.3 J K 1.46 _ 1.4 + 0.1 L _ 1.27+ 0.1 M _ 2.54 + 0.2 N _ 4.5 + 0.2 O _ 2.4 + 0.2 P _ 9.2 + 0.2 Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RthJC RthCS RthJA 140 1.12 150 -55 150 0.89 0.5 62.5 2.5 62.5 /W /W /W 19 12.1 76 250 14 4.5 50 0.4 RATING KHB019N20P1 KHB019N20F1 200 30 19* 12.1* 76* F 1. GATE 2. DRAIN 3. SOURCE UNIT V V KHB019N20F1 TO-220AB A A C mJ mJ O E G P B V/ns K W L W/ D M M J Q Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient H DIM MILLIMETERS _ 10.16 + 0.2 A _ 15.87 + 0.2 B _ C 2.54 + 0.2 _ D 0.8 + 0.1 _ E 3.18 + 0.1 _ F 3.3 + 0.1 _ 12.57 + 0.2 G _ 0.5 + 0.1 H J 13.0 MAX _ K 3.23 + 0.1 L 1.47 MAX _ 2.54 + 0.2 M _ N 4.7 + 0.2 _ O 6.68 + 0.2 P 6.5 _ Q 2.76 + 0.2 N 1 2 3 1. GATE 2. DRAIN 3. SOURCE * : Drain current limited by maximum junction temperature. TO-220IS D G S 2006. 2. 20 Revision No : 1 1/7 KHB019N20P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=200V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=9.5A 200 2 0.18 0.14 10 4 100 0.18 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS Note 5) Essentially independent of operating temperature. 2006. 2. 20 Revision No : 1 2/7 KHB019N20P1/F1 ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 101 5.0 V Bottom : 4.5 V ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 25 C -55 C 10 0 100 10-1 100 101 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) BVDSS - Tj Normalized Breakdown Voltage BVDSS 0.8 VGS = 0V IDS = 250 RDS(ON) - ID On - Resistance RDS(ON) () 1.2 0.6 1.1 0.4 VGS = 10V 1.0 VGS = 20V 0.2 0.9 0.8 -100 0.0 0 -50 0 50 100 150 10 20 30 40 50 60 Junction Temperature Tj ( C ) Drain Current ID (A) IS - VSD Reverse Drain Current IS (A) 3.0 RDS(ON) - Tj VGS = 10V IDS = 9.5V 101 Normalized On Resistance 1.2 1.6 2.0 2.4 2.5 2.0 1.5 1.0 0.5 100 150 C 25 C 10-1 0.0 0.4 0.8 Source - Drain Voltage VSD (V) 0.0 -100 -50 0 50 100 150 Junction Temperature Tj ( C ) 2006. 2. 20 Revision No : 1 3/7 KHB019N20P1/F1 C - VDS 5000 4500 4000 Frequency = 1MHz Qg- VGS 12 Gate - Source Voltage VGS (V) ID= 19A VDS = 160V VDS = 100V VDS = 40V 10 8 6 4 2 0 0 10 Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 10-1 100 101 Crss Coss Ciss 20 30 40 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Safe Operation Area Operation in this area is limited by RDS(ON) Safe Operation Area Operation in this area is limited by RDS(ON) Drain Current ID (A) Drain Current ID (A) 10 2 102 100s 10 s 101 1ms 10ms 10 1 100 s 1 ms 100 Tc= 25 C Tj = 150 C 10-1 Single nonrepetitive pulse DC 10 0 10 ms 100 101 102 10 -1 Tc= 25 C Tj = -150 C Single nonrepetitive pulse DC 100 101 102 Drain - Source Voltage VDS (V) (KHB019N20P1) Drain - Source Voltage VDS (V) (KHB019N20F1) ID - Tj 20 Drain Current ID (A) 15 10 5 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2006. 2. 20 Revision No : 1 4/7 KHB019N20P1/F1 Rth {KHB019N20P1} Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM t1 t2 10-2 10-5 Single Pulse - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-3 10-2 10-1 100 101 10-4 Square Wave Pulse Duration (sec) Rth {KHB019N20F1} Normalized Transient Thermal Resistance Duty=0.5 100 0.2 0.1 0.05 PDM t1 t2 Single Pulse 10-1 0.02 0.01 10-2 - Duty Factor, D= t1/t2 Tj(max) - Tc - RthJC = PD 10-3 10-2 10-1 100 101 10-5 10-4 Square Wave Pulse Duration (sec) 2006. 2. 20 Revision No : 1 5/7 KHB019N20P1/F1 - Gate Charge VGS Fast Recovery Diode 10 V ID 0.8 VDSS 1.0 mA ID Q Qgs Qgd Qg VGS VDS - Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V ID(t) VGS VDD VDS(t) Time - Resistive Load Switching tp VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% td(on) ton tr tf td(off) toff VGS 2006. 2. 20 Revision No : 1 6/7 KHB019N20P1/F1 - Source - Drain Diode Reverse Recovery and dv /dt DUT IF VDS Body Diode Forword Current ISD (DUT) di/dt IRM IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2006. 2. 20 Revision No : 1 7/7 |
Price & Availability of KHB019N20F1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |