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| $GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 1.185 (Typ.) IRLW/I610A BVDSS = 200 V RDS(on) = 1.5 ID = 3.3 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25C) Continuous Drain Current (TC=100C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25C) * Total Power Dissipation (TC=25C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 200 3.3 2.1 12 20 29 3.3 3.3 5 3.1 33 0.26 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/C C 300 Thermal Resistance Symbol RJC RJA RJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.81 40 62.5 C/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B (c)1999 Fairchild Semiconductor Corporation 1 IRLW/I610A Electrical Characteristics (TC=25C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 200 -1.0 -----------------0.19 ------1.9 185 35 14 9 9 20 6 6.1 1.4 2.8 --2.0 100 -100 10 100 1.5 -240 45 20 30 30 50 20 9 --nC ns pF A V V nA 1&+$11(/ 32:(5 026)(7 Test Condition VGS=0V,ID=250A V/C ID=250A VGS=20V VGS=-20V VDS=200V See Fig 7 VDS=5V,ID=250A VDS=160V,TC=125C VGS=5V,ID=1.65A VDS=40V,ID=1.65A (4) (4) VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=3.3A, RG=22 See Fig 13 VDS=160V,VGS=5V, ID=3.3A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge (1) (4) Min. Typ. Max. Units --------123 0.38 3.3 12 1.5 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25C,IS=3.3A,VGS=0V TJ=25C,IF=3.3A diF/dt=100A/s (4) Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=4mH, IAS=3.3A, VDD=50V, RG=27, Starting TJ =25C (3) ISD 3.3A, di/dt 140A/s, VDD BVDSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature 2 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characteristics 11 0 VGS Top : 7.0V 6.0V IRLW/I610A Fig 2. Transfer Characteristics 11 0 ID , Drain Current [A] 10 0 4.5V 4.0V 3.5V Bottom : 3.0 V ID , Drain Current [A] 5.5V 5.0V 10 0 1 0 oC 5 2 oC 5 1 -1 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 10 0 DS @Nts: oe 1 V =0V . GS - 5 oC 5 2 V =4 V . DS 0 3 2 0 s P l e T s .5 us et 4 6 8 1 0 1 -1 0 11 0 1 -1 0 0 2 V , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] 4 Fig 3. On-Resistance vs. Drain Current IDR , Reverse Drain Current [A] 11 0 Fig 4. Source-Drain Diode Forward Voltage Drain-Source On-Resistance 3 V =5V GS RDS(on) , [ ] 2 10 0 1 @Nt :T =2 C oe J 5 8 1 0 o 1 0 oC 5 2C 5 1 -1 0 04 . 06 . SD o @Nts: oe 1 V =0V . GS 2 2 0 s P l e T s .5 us et 08 . 10 . 12 . 14 . V =1 V 0 GS 0 0 2 D 4 6 I , Drain Current [A] V , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 30 0 C = C + C (C = s o t d ) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 6 Fig 6. Gate Charge vs. Gate-Source Voltage 20 4 VGS , Gate-Source Voltage [V] C iss V =4 V 0 DS V =0 V 10 DS 4 V =10V 6 DS Capacitance [pF] 10 8 10 2 C oss @Nts: oe 1 V =0V . GS 2 f=1Mz . H 2 6 0 C rss @Nts:I =33A oe . D 0 0 G 00 1 0 1 0 1 2 4 6 VDS , Drain-Source Voltage [V] Q , Total Gate Charge [nC] 3 IRLW/I610A Fig 7. Breakdown Voltage vs. Temperature 12 . 25 . 1&+$11(/ 32:(5 026)(7 Fig 8. On-Resistance vs. Temperature Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 20 . BVDSS , (Normalized) 11 . 15 . 10 . 10 . @ Nt s: oe 1 V =5 V . GS 2 I =1 6 A . D .5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 09 . @ Nt s: oe 1 V =0 V . GS 2 I = 2 0 A .D 5 05 . 08 . -5 7 -0 5 -5 2 J 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 00 . -5 7 T , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area O ea in i Ti Ae pr to n hs r a i L m t d b R DS(on) s i ie y Fig 10. Max. Drain Current vs. Ambient Temperature 10 . ID , Drain Current [A] 11 0 ID , Drain Current [A] 08 . 1 0 s 0 10 0 1m s 1m 0s D C @ Nt s: oe 1 T = 2 oC .C 5 1 -2 0 2 T = 1 0 oC .J 5 3 Sn l P le . ig e us 06 . 1 -1 0 04 . 02 . 1 -3 -1 0 1 0 10 0 11 0 12 0 00 . 2 5 5 0 7 5 10 0 15 2 10 5 VDS , Drain-Source Voltage [V] TA , Ambient Temperature [oC] Thermal Response 102 D=0.5 0.2 101 0.1 0.05 0.02 100 0.01 Fig 11. Thermal Response @ Notes : 1. Z J A (t)=69.4 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TA =PD M *Z PDM JA (t) Z (t) , JA single pulse t1 t2 10- 1 - 5 10 10- 4 10- 3 1 10- 2 10- 1 100 101 102 103 t , Square Wave Pulse Duration [sec] 4 1&+$11(/ 32:(5 026)(7 Fig 12. Gate Charge Test Circuit & Waveform IRLW/I610A Current Regulator 50k 12V 200nF 300nF Same Type as DUT VGS Qg 5V VDS VGS DUT 3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT Vin 5V td(on) t on tr td(off) t off tf 10% Vout VDD ( 0.5 rated VDS ) 90% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD tp ID RG DUT 5V tp ID (t) VDS (t) Time 5 IRLW/I610A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 1&+$11(/ 32:(5 026)(7 DUT + VDS -- IS L Driver RG VGS Same Type as DUT VGS VDD dv/dt controlled by RG IS controlled by Duty Factor D VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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