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PD - 95645A
INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * * * Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
IRGB8B60KPbF IRGS8B60KPBF IRGSL8B60KPbF
C
VCES = 600V IC = 20A, TC=100C
G E
tsc>10s, TJ=150C
Benefits
* Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 1.8V
TO-220AB D2Pak IRGB8B60KPbF IRGS8B60K
TO-262 IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 28 19
Units
V A
c
56 56 20 167 83 -55 to +175 C 300 (0.063 in. (1.6mm) from case) V W
Gate-to-Emitter Voltage Maximum Power Dissipation
PD @ TC = 100C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RJC RCS RJA RJA Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount
Min.
---
Typ.
--- 0.50 --- --- 1.44
Max.
0.90 --- 62 40 ---
Units
C/W
d
--- --- --- ---
Junction-to-Ambient (PCB Mount, Steady State)e Weight
g
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IRGB/S/SL8B60KPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES VCE(on)
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600 -- -- -- -- -- 0.57 1.8 2.2 2.3 4.5 -9.5 3.7 1.0 200 800 -- -- -- 2.2 2.5 2.6 5.5 -- -- 150 500 1320 100 nA A S V
Conditions
VGE = 0V, IC = 500A
Ref.Fig.
Collector-to-Emitter Voltage
V/C VGE = 0V, IC = 1mA (25C-150C) IC = 8.0A, VGE = 15V, TJ = 25C V IC = 8.0A, VGE = 15V, TJ = 150C IC = 8.0A, VGE = 15V, TJ = 175C VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 1mA (25C-125C) VCE = 50V, IC = 8.0A, PW = 80s VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C VGE = 0V, VCE = 600V, TJ = 175C VGE = 20V
5,6,7 8,9,10
VGE(th) VGE(th)/TJ gfe ICES
Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current
3.5 -- -- -- -- --
8,9,10, 11
IGES
Gate-to-Emitter Leakage Current
--
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 29 3.7 14 160 160 320 23 22 140 32 220 270 490 22 21 180 40 440 38 16 -- -- -- 268 268 433 27 26 150 42 330 381 608 27 25 198 56 -- -- -- pF VGE = 0V VCC = 30V f = 1.0MHz ns J ns J IC = 8.0A nC VCC = 480V VGE = 15V
Conditions
Ref.Fig.
17 CT1
IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 25C
CT4
f
IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 25C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 150C
CT4 12,14 WF1,WF2 13,15 CT4 WF1 WF2 CT4
f
IC = 8.0A, VCC = 400V VGE = 15V, RG = 50, L = 1.1mH TJ = 150C
16
FULL SQUARE
TJ = 150C, IC = 34A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 100
4 CT2 CT3 WF3
SCSOA
Short Circuit Safe Operating Area
10
--
--
s
VCC=360V,VGE = +15V to 0V
Notes to are on page 13.
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IRGB/S/SL8B60KPbF
35 30 25
175 150 125
Ptot (W)
0 20 40 60 80 100 120 140 160 180 T C (C)
IC (A)
20 15 10 5 0
100 75 50 25 0 0 20 40 60 80 100 120 140 160 180 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
100 s 10 10
IC (A)
1ms 1 10ms 0.1 DC
IC A)
1 0 1 10 100 VCE (V) 1000 10000 10 100 VCE (V) 1000
0.01
Fig. 3 - Forward SOA TC = 25C; TJ 150C
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
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IRGB/S/SL8B60KPbF
40 35 30 25
ICE (A)
40 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
ICE (A)
35 30 25 20 15 10 5 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
20 15 10 5 0 0 1 2 3 VCE (V) 4 5 6
0
1
2
3 VCE (V)
4
5
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
40 35 30 25
ICE (A)
20 15 10 5 0 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
1
2
3 VCE (V)
4
5
6
Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s
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IRGB/S/SL8B60KPbF
20 18 16 14
20 18 16 14
VCE (V)
VCE (V)
12 10 8 6 4 2 0 5 10 VGE (V) 15 20 ICE = 4.0A ICE = 8.0A ICE = 16A
12 10 8 6 4 2 0 5 10
ICE = 4.0A ICE = 8.0A ICE = 16A
15 VGE (V)
20
Fig. 8 - Typical VCE vs. VGE TJ = -40C
Fig. 9 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
100
80 T J = 25C T J = 150C
VCE (V)
10 8 6 4 2 0 5 10
ICE = 4.0A ICE = 8.0A ICE = 16A
ICE (A)
12
60
40 T J = 150C TJ = 25C 0
20
15 VGE (V)
20
0
5
10 VGE (V)
15
20
Fig. 10 - Typical VCE vs. VGE TJ = 150C
Fig. 11 - Typ. Transfer Characteristics VCE = 360V; tp = 10s
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IRGB/S/SL8B60KPbF
600 500 400
Energy (J)
Swiching Time (ns)
tdOFF
1000
300 200
EOFF
100
tF tdON tR
EON 100 0 0 5 10 IC (A) 15 20
10 0
5
10
15
20
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC TJ = 150C; L=1.1mH; VCE= 400V, RG= 50; VGE= 15V
Fig. 13 - Typ. Switching Time vs. IC TJ = 150C; L=1.1mH; VCE= 400V RG= 50; VGE= 15V
700 600 500
10000
EON
EOFF
Swiching Time (ns)
1000
Energy (J)
tdOFF
400 300 200 100 0 0 100 200 300 400 500
tdON
100
tF tR
10 0 100 200 300 400 500
RG ( )
RG ( )
Fig. 14 - Typ. Energy Loss vs. RG TJ = 150C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V
Fig. 15 - Typ. Switching Time vs. RG TJ = 150C; L=1.1mH; VCE= 400V ICE= 8.0A; VGE= 15V
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IRGB/S/SL8B60KPbF
1000
Cies
16 14 300V
Coes
12 10 400V
Capacitance (pF)
100
VGE (V)
Cres
8 6
10
4 2
1 1 10 100
0 0 5 10 15 20 25 30
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 17 - Typical Gate Charge vs. VGE ICE = 8.0A; L = 600H
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20
0.1
J R1 R1 J 1 2 R2 R2 C 1 2
0.10 0.05 0.02 0.01
Ri (C/W) 0.491 0.409
i (sec) 0.000190 0.001153
Ci= i/Ri Ci= i/Ri
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
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IRGB/S/SL8B60KPbF
L
L DUT
0
VCC
80 V
+ -
DUT
480V
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp / DUT
Driver
DC
L
360V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C.SOA Circuit
R=
Fig.C.T.4 - Switching Loss Circuit
VCC ICM
DUT
Rg
VCC
Fig.C.T.5 - Resistive Load Circuit
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IRGB/S/SL8B60KPbF
600 500 400 90% Ice 300 Vce (V) 5% Vce 200 5% Ice 100 Ice
100 4 5% Vce 0 Eon Loss -100 0.3 0.5 0.7 Time (uS) 0.9 -4 0
12 tf Vce 8 10
600
24
500
tr
20 Vce Ice 16 90% Ice 10% Ice
400
6 Ice (A)
Vce (V) 300
12 Ice (A)
4 2 0 Eoff Loss -2 -4 0 0.2 0.4 0.6 0.8 1 Time (uS)
200
8
0 -100 -200
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4
400
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4
80
350
300
60
250 Vce (V) Ice (A)
200
40
150
100
20
50
0 0.00
10.00
20.00
30.00
40.00
0 50.00
Time (uS)
Fig. WF3- Typ. S.C Waveform @ TC = 150C using Fig. CT.3
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IRGB/S/SL8B60KPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
10
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IRGB/S/SL8B60KPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WITH L OT CODE 8024 AS S E MBLE D ON WW 02, 2000 IN THE AS S E MB LY L INE "L " Note: "P" in as s embly line pos ition indicates "Lead-F ree" INTE RNAT IONAL RE CT IFIE R LOGO AS S E MBL Y L OT CODE PAR T NU MBER F 530S DAT E CODE YEAR 0 = 2000 WE EK 02 L INE L
OR
INT ERNAT IONAL RECT IF IER L OGO AS S EMB LY LOT CODE PART NUMB ER F 530S DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMB LY S IT E CODE
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IRGB/S/SL8B60KPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMPLE : T HIS IS AN IR L 3103L L OT CODE 1789 AS S EMB L E D ON WW 19, 1997 IN T HE AS S EMB L Y L INE "C" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MBL Y LOT CODE PAR T NU MBE R
DAT E CODE YE AR 7 = 1997 WE EK 19 L INE C
OR
INT E RNAT IONAL R ECT IF IER L OGO AS S E MB L Y L OT CODE PAR T NU MB ER DAT E CODE P = DE S IGNAT E S L EAD-F RE E PRODU CT (OPT IONAL ) YE AR 7 = 1997 WEE K 19 A = AS S E MB LY S IT E CODE
12
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IRGB/S/SL8B60KPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
Notes:
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
VCC = 80% (VCES), VGE = 15V, L = 100H, RG = 50. This is only applied to TO-220AB package. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/04
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