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PD - 97112A
IRF6643TRPBF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
RoHS Compliant l Lead-Free (Qualified up to 260C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
l
VDSS Qg
tot
VGS Qgd
11nC
RDS(on)
29m@ 10V
150V max 20V max
Vgs(th)
4.0V
39nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SH SJ SP MZ MN
DirectFET ISOMETRIC
Description
The IRF6643PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6643PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DCDC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
70
Typical R DS (on) (m)
Max.
150 20 6.2 5.0 35 76 50 7.6
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS Pulsed Drain Current
g
e e @ 10V f h
12 10 8 6 4 2 0 0 10 ID= 7.6A
A
Single Pulse Avalanche Energy Avalanche CurrentAg
ID = 7.6A TJ = 125C 50 40 30 20 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) TJ = 25C
mJ A
60
VDS = 120V VDS = 75V VDS = 30V
16
20
30
40
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Fig 1. Typical On-Resistance vs. Gate Voltage
Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Notes:
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.43mH, RG = 25, IAS = 7.6A.
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IRF6643TRPBF
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
150 --- --- 3.0 --- --- --- --- --- 16 --- --- --- --- --- --- ---
---
Typ.
--- 0.18 29 4.0 -11 --- --- --- --- --- 39 9.6 2.2 11 16 13 14 0.8 9.2 5.0 13 4.4 2340 300 61 1950 140
Max.
--- --- 34.5 4.9 --- 20 250 100 -100 --- 55 --- --- 17 --- --- --- --- --- --- --- --- --- --- --- --- ---
Units
V V/C m V mV/C A nA S
Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 7.6A i VDS = VGS, ID = 150A VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 7.6A VDS = 75V
nC
VGS = 10V ID = 7.6A See Fig. 15
nC
VDS = 16V, VGS = 0V VDD = 75V, VGS = 10V ID = 7.6A i
--- --- --- --- --- --- --- --- ---
ns
Clamped Inductive Load VGS = 0V
pF
VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 80V, f=1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) TJ= 25C Pulsed Source Current (Body Diode) g --- --- --- --- 67 190 1.3 100 280 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 76
Min.
---
Typ.
---
Max.
58
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IF = 7.6A, VDD = 50V di/dt = 100A/s c
G S D
TJ = 25C, IS = 7.6A, VGS = 0V i
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6643TRPBF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG
e Power Dissipation e Power Dissipation f
Power Dissipation Operating Junction and
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
Peak Soldering Temperature Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100
el Junction-to-Ambient jl Junction-to-Ambient kl Junction-to-Case fl
Junction-to-Ambient
Parameter
Typ.
--- 12.5 20 --- 1.0
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C A 4
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.00086 0.57756 8.94 106
1
2
3
4
0.1
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x Zthja + Ta
1 10 100
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Mounted on minimum footprint full size board with metalized Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. R is measured at TJ of approximately 90C. Used double sided cooling, mounting pad with large heatsink.
Notes:
t1 , Rectangular Pulse Duration (sec)
Surface mounted on 1 in. square Cu board (still air).
Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air)
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IRF6643TRPBF
100 7.0V 100
TOP VGS 15V 10V 8.0V 7.0V
7.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
TOP BOTTOM
10
VGS 15V 10V 8.0V 7.0V
10
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 0.1 1
60s PULSE WIDTH
Tj = 150C 10 100
Fig 4. Typical Output Characteristics
100
ID, Drain-to-Source Current()
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.5 ID = 7.6A
Typical RDS(on) (Normalized)
10
TJ = 150C TJ = 25C TJ = -40C
VGS = 10V 2.0
1.5
1
1.0
VDS = 10V 0.1 4.0 5.0
60s PULSE WIDTH 6.0 7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd
Fig 7. Normalized On-Resistance vs. Temperature
45 TJ= 25C VGS = 7.0V VGS = 8.0V VGS = 10V VGS = 15V 35
C, Capacitance(pF)
Ciss 1000 Coss Crss
Typical R
DS(on)
(m)
10000
Coss = Cds + Cgd
40
100
30
10 1 10 VDS , Drain-to-Source Voltage (V) 100
25 0 10 20 30 40 50
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
4
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IRF6643TRPBF
100
ID, Drain-to-Source Current (A)
1000
ISD , Reverse Drain Current (A)
10
TJ = 150C TJ = 25C TJ = -40C
OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10
1
1msec 1 TA = 25C Tj = 150C Single Pulse 0.1 1.0
VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V)
0.1
10msec
10.0
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
7.0 6.0
Fig11. Maximum Safe Operating Area
5.0
VGS(th) Gate threshold Voltage (V)
4.5
ID , Drain Current (A)
5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 150
4.0
3.5
ID = 250A ID = 150A
3.0
2.5
2.0 -75 -50 -25 0 25 50 75 100 125 150
TJ , Ambient Temperature (C)
TJ , Temperature ( C )
Fig 12. Maximum Drain Current vs. Ambient Temperature
200
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 1.5A 3.0A BOTTOM 15A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
160
120
80
40
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6643TRPBF
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
VGS
+
VDD -
90%
D.U.T VGS
Second Pulse Width < 1s Duty Factor < 0.1%
10%
VDS
td(off) tf td(on) tr
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6643TRPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
*
* * * *
dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
**
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6643TRPBF
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 IMPERIAL MAX 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007
DirectFET Part Marking
8
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IRF6643TRPBF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: CONTROLLING DIMENSIONS IN MM
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6643TRPBF). For 1000 parts on 7" reel, order IRF6643TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MAX MIN MAX MIN MAX N.C 6.9 A 12.992 177.77 N.C 330.0 N.C N.C 0.75 B 0.795 N.C 19.06 20.2 N.C N.C N.C 0.53 C 0.504 0.50 13.5 12.8 0.520 12.8 13.2 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 2.31 E 3.937 58.72 100.0 N.C N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 13.50 18.4 G 0.47 0.488 11.9 N.C 12.4 0.567 12.01 14.4 H 0.47 0.469 11.9 11.9 0.606 N.C 12.01 15.4
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/06
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