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| GF6968AD N-Channel Enhancement-Mode MOSFET Die Chip Geometry NCHT t TRENFE duc GE New Pro TM Gate VDS 20V RDS(ON) 30m ID 6.0A Source D G Physical Characteristics * Die size : 1800 X 1120m (70.9 X 44.1 mils) * Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag * Metal Thickness: Top: 3.0m Back: 1.4m * Die thickness: 9 - 13 mils * Bonding Area: Source: Full metalized surface of source region Gate: 181 x 181m * Recommended Wire Bonding: Source: 2 mil Au wire (3 or more wires preferred) Gate: 2 mil Au wire Note: More source wires can further improve performance S Features * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Fast Switching * High temperature soldering in accordance with CECC802/Reflow guaranteed * Logic Level * Ideal for Li ion battery pack applications Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TJ = 150C(1) Pulsed Drain Current Continuous Source Current (Diode Conduction)(1) Maximum Power Dissipation(1) TA = 25C TA = 70C (1) Symbol VDS VGS TA = 25C TA = 70C ID IDM IS PD TJ, Tstg RJA Limit 20 Unit V 10 6.0 4.8 20 1.7 2.0 1.3 -55 to 150 62.5 A W C C/W Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance Note: Maximum ratings are based on die packaged in a SO-8 Dual package. Actual rating can increase (or decrease), depending on actual assembly method used 5/23/01 GF6968AD N-Channel Enhancement-Mode MOSFET Die Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(2) Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage(2) Source-Drain Reverse Recovery Time Notes: (1) Surface mounted on FR4 board, t 10 sec. (2) Pulse test; pulse width 300 s, duty cycle 2% Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 8V VDS = 20V, VGS = 0V VDS=20V, VGS=0V, TJ=55C VDS 5V, VGS = 4.5V VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6A 20 0.5 - - - 20 - - - - - - - - - 22 28 24 - - V V nA A A m S 100 1 5 - 30 40 - Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 10V, VGS = 4.5V ID = 6A VDD = 10V, RL = 10 ID 1A, VGEN = 4.5V RG = 6 VGS = 0V VDS = 10V f = 1.0MHZ - - - - - - - - - - 13 2.2 3 11 15 43 22 1240 200 120 40 - - 60 140 140 60 - - - pF ns nC VSD trr IS = 1.7A, VGS = 0V IF = 1.7A, di/dt = 100A/s - - 0.7 - 1.3 100 V ns VDD td(on) VOUT Output, VOUT ton tr 90% toff td(off) tf 90 % 10% INVERTED VIN D RD 10% VGEN RG G 50% 50% DUT 90% Input, VIN S 10% PULSE WIDTH Switching Test Circuit Switching Waveforms GF6968AD N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 20 4.5V 3.5V VGS = 2.5V 3.0V 16 2.0V 20 VDS = 10V 16 Fig. 2 - Transfer Characteristics ID -- Drain Source Current (A) 12 ID -- Drain Current (A) 12 8 1.5V 8 TJ = 125C 4 25C 4 --55C 0 0 0.5 1 1.5 2 2.5 3.0 3.5 0 0 0.5 1 1.5 2 2.5 3 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature VGS(th) -- Gate-to-Source Threshold Voltage (V) 1 ID = 250A 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.04 0.035 0.03 0.025 Fig. 4 - On-Resistance vs. Drain Current RDS(ON) -- On-Resistance () VGS = 2.5V 4.5V 0.02 0.015 0.01 --50 --25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.6 RDS(ON) -- On-Resistance (Normalized) VGS = 4.5V ID = 6A 1.4 1.2 1 0.8 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GF6968AD N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.08 5 Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 10V ID = 6A 4 ID = 6A RDS(ON) -- On-Resistance () 0.06 3 0.04 TJ = 125C 2 0.02 25C 1 0 1 2 3 4 5 0 0 2 4 6 8 10 12 14 16 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 - Capacitance 1800 f = 1MHZ VGS = 0V 1500 1200 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V IS -- Source Current (A) C -- Capacitance (pF) Ciss 10 900 1 TJ = 125C 600 300 25C 0.1 --55C Coss Crss 0 4 8 12 16 20 0.01 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GF6968AD N-Channel Enhancement-Mode MOSFET Die Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 31 ID = 250A Fig. 11 - Thermal Impedance 1 D = 0.5 RJA (norm) -- Normalized Thermal Impedance 0.2 0.1 0.1 0.05 0.02 0.01 0.01 t1 t2 1. Duty Cycle, D = t1/t2 2. RJA (t) = RJA(norm) *RJA 3. RJA = 82C/W (on 1-in2 2 oz. Cu. FR-4) 4. TJ - TA = PDM * RJA (t) 0.1 1 10 100 PDM BVDSS -- Drain-to-Source Breakdown Voltage (V) 30 29 28 Single Pulse 0.001 0.0001 0.001 0.01 27 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Pulse Duration (sec.) Fig. 12 - Power vs. Pulse Duration 50 Single Pulse RJA = 82C/W TA = 25C 100 Fig. 13 - Maximum Safe Operating Area 40 100s ID -- Drain Current (A) 10 10 0m 10 ms 1ms Power (W) 30 RDS(ON) Limit 1 10s 0.1 VGS = 4.5V Single Pulse on 1-in2 2oz Cu. TA = 25C 0.1 1 1s s 20 10 DC 0 0.01 0.01 0.1 1 10 100 10 100 Pulse Duration (sec.) VDS -- Drain-Source Voltage (V) |
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