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| IGBT with Diode Short Circuit SOA Capability IXSK 50N60BU1 IXSX 50N60BU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.5 V PLUS247 (IXSX) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C Maximum Ratings C (TAB) 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W C C C Nm/lb.in. g C G C E TO-264 AA (IXSK) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Mounting torque 0.9/6 10 300 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Features * International standard package JEDEC TO-264 AA, and hole-less TO-247 package for clip mounting * Guaranteed Short Circuit SOA capability * High frequency IGBT and antiparallel FRED in one package * Latest generation HDMOSTM process * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages * Space savings (two devices in one package) * Easy to mount with 1 screw (isolated mounting screw hole) * Reduces assembly time and cost Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 325 17 100 2.2 2.5 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90; VGE = 15 V, IXYS reserves the right to change limits, test conditions, and dimensions. 97520A (12/98) (c) 2000 IXYS All rights reserved 1-6 IXSK 50N60BU1 IXSX 50N60BU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 23 S PLUS247TM (IXSX) gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % VGE = 15 V, VCE = 10 V 160 3850 A pF pF pF nC nC nC ns ns 300 300 6.0 ns ns mJ ns ns mJ ns ns mJ 0.42 K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 VCE = 25 V, VGE = 0 V, f = 1 MHz 440 50 167 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 45 88 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 70 70 150 150 3.3 70 70 2.5 230 230 4.8 TO-264 AA Outline 0.15 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Dim. IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C 19 175 35 1.8 33 50 V A ns ns Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 0.75 K/W A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-6 IXSK 50N60BU1 IXSX 50N60BU1 100 TJ = 25C VGE = 15V 13V 160 TJ = 25C VGE = 15V 80 120 IC - Amperes IC - Amperes 60 40 20 9V 11V 13V 80 11V 40 9V 0 0 2 4 6 8 7V 0 10 0 4 8 12 16 20 Figure 1. Saturation Voltage Characteristics VCE - Volts VCE - Volts Figure 2. Extended Output Characteristics 100 TJ = 125C 1.6 VGE = 15V 13V IC = 100A VCE (sat) - Normalized 80 1.4 VGE = 15V IC - Amperes 1.2 1.0 0.8 IC = 25A 60 11V 40 20 0 0 2 4 6 8 10 9V 7V IC = 50A 0.6 0.4 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 100 VCE = 10V 10000 f = 1Mhz Ciss 80 Capacitance - pF IC - Amperes 1000 60 40 TJ = 125C 100 Coss 20 T J = 25C Crss 0 4 6 8 10 VGE - Volts 10 12 14 16 0 5 10 15 20 25 30 35 40 VCE-Volts Figure 5. Admittance Curves Figure 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-6 IXSK 50N60BU1 IXSX 50N60BU1 3.0 TJ = 125C E(ON) 24 RG = 10 4 TJ = 125C E(OFF) 20 2.5 E(ON) - millijoules 20 E(OFF) - milliJoules E(ON) - millijoules 3 E(ON) 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 E(OFF) 16 12 8 4 0 100 IC = 100A 15 E(OFF) - millijoules 2 E(ON) E(ON) IC = 50A E(OFF) 10 1 E(OFF) IC =25A 5 0 0 10 20 30 40 50 0 60 IC - Amperes RG - Ohms Figure 7. Dependence of EON and EOFF on IC. 20 IC =50A Figure 8. Dependence of EON and EOFF on RG. 600 16 12 8 4 0 0 VCE = 250V 100 IC - Amperes 10 TJ = 125C dV/dt < 5V/ns 1 0.1 25 50 75 100 125 150 175 0 100 200 300 400 500 600 Qg - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved RG = 6.2 1 4-6 IXSK 50N60BU1 IXSX 50N60BU1 Fig. 12 Forward current versus voltage drop. Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt. Fig. 18 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 5-6 IXSK 50N60BU1 IXSX 50N60BU1 (c) 2000 IXYS All rights reserved 6-6 |
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