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| MSC1090M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC1090M is a common base Class C transistor, designed for Avionics, DME Applications from 1025 to 1150 MHz. PACKAGE STYLE .250 2L FLG(B) A .100 X 45 OD 1 4 2 E F .088 x 45 CHAMFER C B 3 FEATURES: * Internal Input Matching Network * PG = 8.4 dB at 90 W/1150 MHz * OmnigoldTM Metalization System G H K I J DIM A B MINIMUM inches / mm MAXIMUM inches / mm .095 / 2.41 1.050 / 26.67 .245 / 6.22 .120 / 3.05 .552 / 14.02 .790 / 20.07 .105 / 2.67 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC 250 mA 50 V 290 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.60 C/W C D E F G H I J K .255 / 6.48 .140 / 3.56 .572 / 14.53 .810 / 20.57 .285 / 7.24 .003 / 0.08 .052 / 1.32 .120 / 3.05 .007 / 0.18 .072 / 1.83 .130 / 3.30 .210 / 5.33 1 = COLLECTOR 2 = EMITTER 3 & 4 = BASE CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 1 mA IC = 5 mA IE = 1 mA VCE = 50 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.5 6.3 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V PIN = 13 W IC = 100 mA POUT = 90 W f = 1025 - 1150 MHz 5 8.4 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1 |
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