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TrenchStop Series
IKP15N60T q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Pb-free lead plating; RoHS compliant Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 15A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking Code K15T60 Package PG-TO-220-3-1
C
G
E
PG-TO-220-3-1
* * * * * *
Type IKP15N60T
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
2)
Symbol VCE IC
Value 600 30 15
Unit V A
ICpul s IF
45 45 30 15
IFpul s VGE tSC Ptot Tj Tstg
45 20 5 130 -40...+175 -55...+175 260 V s W C
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 May 06
Power Semiconductors
TrenchStop Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 C T j =1 7 5 C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 C T j =1 7 5 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 21 0 A , V C E = V G E V C E = 60 0 V, V G E = 0V T j =2 5 C T j =1 7 5 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IKP15N60T q
Max. Value 1.15 1.9 62 Unit K/W
Symbol RthJC RthJCD RthJA
Conditions
Symbol
Conditions
Value min. 600 4.1 Typ. 1.5 1.9 1.65 1.6 4.9 max. 2.05 2.05 5.7
Unit
V
A 8.7 40 1000 100 nA S
IGES gfs RGint
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V
-
860 55 24 87 7 137.5
-
pF
nC nH A
V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j 150C
-
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.1 May 06
Power Semiconductors
TrenchStop Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 1 5 A, d i F / d t =8 2 5 A/ s td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 1 5 A, V G E = 0 /1 5 V, R G = 15 , 1) L =1 5 4n H, 1) C = 3 9p F Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKP15N60T q
Value min. Typ. 17 11 188 50 0.22 0.35 0.57 34 0.24 10.4 718 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d t T j =1 7 5 C V R = 4 00 V , I F = 1 5 A, d i F / d t =8 2 5 A/ s 140 1.0 14.7 495 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j =1 7 5 C, V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , RG= 15 1) L =1 5 4n H, 1) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 17 15 212 79 0.34 0.47 0.81 mJ ns Symbol Conditions Value min. Typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 May 06
Power Semiconductors
TrenchStop Series
IKP15N60T q
tp =2s 10s
40A
IC, COLLECTOR CURRENT
30A
T C =110C
IC, COLLECTOR CURRENT
T C =80C
10A
50s
20A
1A 1ms DC 10ms
Ic
10A
Ic
0A 10H z 100H z 1kHz 10kHz 100kHz
0.1A 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 15)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
30A
120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
20A
10A
50C
75C
100C 125C 150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.1 May 06
TrenchStop Series
40A 40A 35A V GE =20V 35A V GE =20V 15V 13V 11V 20A 15A 10A 5A 0A 0V 1V 2V 3V 0V 1V 9V 7V
IKP15N60T q
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
30A 25A 20A 15A 10A 5A 0A
15V 13V 11V 9V 7V
30A 25A
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
35A 30A 25A 20A 15A 10A T J = 1 7 5 C 5A 0A 2 5 C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
2.5V
IC =30A
IC, COLLECTOR CURRENT
2.0V
1.5V
IC =15A IC =7.5A
1.0V
0.5V
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
t d(off)
t d(off)
100ns
t, SWITCHING TIMES
tf t d(on) 10ns
t, SWITCHING TIMES
100ns tf
tr
t d(on) tr
1ns 0A 5A 10A 15A 20A 2 5A 10ns
10 20 30 40 50
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E)
7V 6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t d(off) 100ns tf
t d(on)
10ns
tr 50C 75C 100C 125C 15 0C
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
25C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG=15, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA)
Power Semiconductors
6
Rev. 2.1 May 06
TrenchStop Series
1.6 mJ 1.4 mJ 1.2 mJ 1.0 mJ 0.8 mJ 0.6 mJ 0.4 mJ
0 .0m J 0A
IKP15N60T q
E ts*
1 .6m J
*) E on an d E ts in c lu d e lo s s es d u e to d io de re c ov e ry
*) E on and E ts include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
1 .2m J E off 0 .8m J
E on * 0 .4m J
E, SWITCHING ENERGY LOSSES
E ts *
E off
5A
10A
1 5A
20 A
25 A
0.2 mJ
E on*
0 10 20 30 40 50 60 70 80
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 15, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E)
0.9mJ *) E on and E ts include losses 0.8mJ due to diode recovery
1.2m J *) E on and E ts include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
0.7mJ 0.6mJ 0.5mJ 0.4mJ E off 0.3mJ E on* 0.2mJ 25C 50C 75C 100C 125C 150C E ts*
E, SWITCHING ENERGY LOSSES
1.0m J
0.8m J E ts * 0.6m J E off 0.4m J
0.2m J E on * 0.0m J 300V 350V 400V 450V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, RG = 15, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 15A, RG = 15, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
C iss
1nF
VGE, GATE-EMITTER VOLTAGE
15V
120V 480V
10V
c, CAPACITANCE
100pF C oss
5V
C rss
0V 0nC
20nC
40nC
60nC
80nC
100nC
10pF
0V
10V
20V
30V
40V
50V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
200A
tSC, SHORT CIRCUIT WITHSTAND TIME
10s 8s 6s 4s 2s 0s 10V
150A
100A
50A
0A 12V
14V
16V
18V
11V
12V
13V
14V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0
D=0.5
10 K/W
0
D=0.5
0.2 0.1
0.2 0.1 10 K/W
-1
R,(K/W) 0.13265 0.37007 0.30032 0.34701
R1
5.67*10-2 1.558*10-2 2.147*10-3 2.724*10-4
R2
, (s)
10 K/W
-1
R,(K/W) 0.06991 0.43036 0.53839 0.05 0.58718 0.23695 0.03700 0.02
, (s) 1.11*10-1 2.552*10-2 3.914*10-3 4.92*10-4 7.19*10-5 7.4*10-6
R2
6
0.05 0.02
C 1 = 1 /R 1 C 2 = 2 /R 2
0.01
R1
0.01 single pulse 10 K/W 1s
-2
C 1 = 1 /R 1
C 2 = 2 /R 2
single pulse 10 K/W 1s
-2
10s 100s
1ms
10ms 100ms
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
200ns
1.0C
T J=175C
trr, REVERSE RECOVERY TIME
TJ=175C
160ns
Qrr, REVERSE RECOVERY CHARGE
0.8C
120ns
0.6C
80ns
TJ=25C
0.4C
T J=25C
40ns
0.2C
0ns 400A/s
600A/s
800A/s
0.0C 400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
16A 14A 12A 10A 8A 6A 4A 2A 0A
T J =175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-700A/s -600A/s -500A/s -400A/s -300A/s -200A/s -100A/s 0A/s 400A/s
Irr, REVERSE RECOVERY CURRENT
T J=175C
T J =25C
T J=25C
400A/s
600A/s
800A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 15A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=15A, Dynamic test circuit in Figure E)
40A
2.0V
30A
I F =30A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
15A
20A T J =25C 175C 10A
1.0V
7.5A
0.5V
0A
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
PG-TO-220-3-1
Power Semiconductors
11
Rev. 2.1 May 06
TrenchStop Series
i,v diF /dt
IKP15N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.
Power Semiconductors
12
Rev. 2.1 May 06
TrenchStop Series
IKP15N60T q
Edition 2006-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 5/8/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.1 May 06

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