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| HITFETO II.Generation BTS 3207N Smart Lowside Power Switch Features * Logic Level Input * Input Protection (ESD) * Thermal shutdown with auto restart * Overload protection * Short circuit protection * Overvoltage protection * Current limitation * Analog driving possible 2 1 VPS05163 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 500 0.64 150 V mW A mJ 4 3 Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS O technology. Fully protected by embedded protection functions. Vbb M HITFET a Current Limitation In Pin 1 Drain OvervoltageProtection Pin 2 and 4 (TAB) Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Page 1 V1.0, 2004-11-19 BTS 3207N Maximum Ratings at Tj = 25C, unless otherwise specified Parameter Symbol Drain source voltage Supply voltage for full short circuit protection6) Continuous input voltage1) Continuous input current2) -0.2V VIN 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 C Unclamped single pulse inductive energy 2) Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 Thermal resistance junction - ambient: @ min. footprint @ 6 cm 2 cooling area 4) junction-soldering point: 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) 6For supply voltages above 22V the voltage drop V has to be limited by Rsc=100mohm/V on Target Data Sheet Page 2 Value 42 42 -0.22) ... +10 Unit V VDS Vbb(SC) VIN IIN mA self limited | IIN | 2 Tj Tstg Ptot EAS VLD -40 ...+150 -55 ... +150 3.8 150 50 C W mJ V 2 kV MSL1 40/150/56 RthJA 125 72 RthJS 17 K/W K/W V1.0, 2004-11-19 BTS 3207N Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40...+85 C, V bb = 32 V, VIN = 0 V Tj = 150 C Input threshold voltage ID = 0.3 mA, Tj = 25 C ID = 0.3 mA, Tj = 150 C On state input current On-state resistance VIN = 5 V, ID = 1.4 A, Tj = 25 C VIN = 5 V, ID = 1.4 A, Tj = 150 C On-state resistance VIN = 10 V, I D = 1.4 A, Tj = 25 C VIN = 10 V, I D = 1.4 A, Tj = 150 C Nominal load current 5) VDS = 0.5 V, Tj < 150C, VIN = 10 V, T A = 85 C Current limit (active if VDS>2.5 V)1) VIN = 10 V, VDS = 12 V, t m = 200 s ID(lim) 5 7.5 10 ID(Nom) RDS(on) 0.64 500 1000 A IIN(on) RDS(on) 600 1200 VIN(th) 1.3 0.8 1.7 10 2.2 30 A mW IDSS 1.5 4 8 10 V A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s. 5not subject to production test, calculated by R thJA and Rds(on) Page 3 Target Data Sheet V1.0, 2004-11-19 BTS 3207N Electrical Characteristics Parameter at Tj = 25C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 45 60 0.4 0.6 100 100 1.5 1.5 V/s s RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis 2) Input current protection mode Tj = 150 C Unclamped single pulse inductive energy 2) ID = 1.4 A, Tj = 25 C, Vbb = 12 V EAS 150 mJ Tjt DTjt IIN(Prot) 150 175 10 40 300 C K A Symbol min. Values typ. max. Unit Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 s, VIN = 0 V, tP = 300 s VSD 1 1.5 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Target Data Sheet Page 4 V1.0, 2004-11-19 BTS 3207N Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S 3 D 2 ID VDS Vbb Z D S HITFET VIN Input circuit (ESD protection) Short circuit behaviour Gate Drive Input V IN Source/ Ground IIN ID S T j Target Data Sheet Page 5 V1.0, 2004-11-19 BTS 3207N 1 Maximum allowable power dissipation Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W 10 W 2 On-state resistance RON = f(Tj ); ID=1.4A; V IN=10V 1000 mW 8 7 max. 800 RDS(on) -25 0 25 50 75 100 C 150 max. 700 600 500 400 300 200 100 Ptot 6 5 4 3 2 1 0 -75 6cm2 -50 0 -50 -25 0 25 50 75 100 125 C 175 TS ;TA Tj 3 On-state resistance RON = f(T j); ID= 1.4A; V IN=5V 1250 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.3 mA; VDS = 12V 2 max. mW 1000 V 1.6 RDS(on) 875 750 625 500 375 250 125 0 -50 -25 0 25 50 75 100 125 C 175 VGS(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 C -25 0 25 50 75 100 150 Tj Target Data Sheet Page 6 Tj V1.0, 2004-11-19 BTS 3207N 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25C 8 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN 10 A 8 6 ID 5 ID(lim) 7 6 5 5V Vin=10V 4 3 4 3 2 2 1 1 V 0 0 1 2 3 4 5 6 7 8 10 0 -50 -25 0 25 50 75 100 125 C 175 VIN Tj 7 Typ. output characteristics I D=f(V DS); T Jstart=25C Parameter: VIN 10 A Vin=10V 7V 8 Off-state drain current IDSS = f(Tj) 11 A max. 8 6V 9 5V 4V 7 8 IDSS ID 6 5 4 7 6 5 4 typ. 3 2 1 0 0 V 3V 3 2 1 1 2 3 4 6 0 -50 -25 0 25 50 75 100 125 C 175 VDS Target Data Sheet Page 7 Tj V1.0, 2004-11-19 BTS 3207N 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 12 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 2 K/W D=0.5 0.2 0.1 A -40C 10 1 ID(lim) 8 ZthJA 25C 85C 0.05 0.02 0.01 6 150C 10 0 4 10 -1 2 Single pulse 0 0 0.5 1 1.5 2 2.5 3 ms 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 t tp 11 Determination of ID(lim) ID(lim) = f(t); t m = 200s Parameter: TJstart 12 A ID(lim) 8 -40C 25C 6 85C 4 150C 2 0 0 0.1 0.2 0.3 0.4 ms 0.55 t Target Data Sheet Page 8 V1.0, 2004-11-19 BTS 3207N Package SOT-223 A Ordering Code 1.6 0.1 6.5 0.2 3 0.1 0.1 max B 7 0.3 15 max 4 1 2 3 2.3 4.6 0.5 min 0.7 0.1 0.28 0.04 0.25 M A 0.25 M B GPS05560 3.5 0.2 +0.2 acc. to DIN 6784 Target Data Sheet Page 9 V1.0, 2004-11-19 BTS 3207N Revision History : Previous version : Page 2004-11-19 Subjects (major changes since last revision) For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET(R), SIPMOS(R) are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Target Data Sheet Page 10 V1.0, 2004-11-19 |
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