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APT60GF120JRD 1200V 100A E C Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. E G SO ISOTOP (R) 2 T- 27 "UL Recognized" * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter Collector-Emitter Voltage C G E APT60GF120JRD UNIT All Ratings: TC = 25C unless otherwise specified. 1200 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 20 100 60 200 120 520 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) TYP MAX UNIT PR EL I Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. M 1200 4.5 5.5 2.9 3.5 6.5 3.4 4.1 1.0 2 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 2 I CES I GES TBD 100 mA nA 052-6259 Rev A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60GF120JRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 5 I C = I C2 MIN TYP MAX UNIT 7200 790 420 690 55 390 60 205 295 210 55 130 750 80 9 10 19 9600 1100 630 pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time nC RY 6 MIN ns IM Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5 TJ = +150C IN A ns Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 4 EL 4 mJ PR Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 5 55 145 650 70 17 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 4 TJ = +25C VCE = 20V, I C = I C2 Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.24 0.66 40 1.03 oz gm C/W Package Weight 29.2 10 lb*in N*m Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine) 1.1 052-6259 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. Leakages include the FRED and IGBT. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. 2 3 4 APT60GF120JRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 60C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT60GF120JRD UNIT 1200 Volts 60 100 540 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3mS) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions IN A RY MIN MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C RMS Forward Current TYP MAX UNIT IM IF = 60A IF = 120A IF = 60A, TJ = 150C 2.5 2.0 2.0 Volts VF Maximum Forward Voltage DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 60A, diF /dt = -480A/s, VR =650V Characteristic TYP MAX UNIT PR EL Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 60A, diF /dt = -480A/s, VR = 650V Forward Recovery Time IF = 60A, diF /dt = 480A/s, VR = 650V Reverse Recovery Current IF = 60A, diF /dt = -480A/s, VR = 650V Recovery Charge IF = 60A, diF /dt = -480A/s, VR = 650V Forward Recovery Voltage IF = 60A, diF /dt = 480A/s, VR = 650V Rate of Fall of Recovery Current 70 70 130 170 170 18 29 630 85 ns 30 Amps 40 nC 1820 12 Volts 12 A/s 052-6259 Rev A 900 600 APT60GF120JRD Vr D.U.T. 30H trr/Qrr Waveform +15v diF /dt Adjust 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY Figure 25, Diode Reverse Recovery Test Circuit and Waveforms PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) * Emitter Collector * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 052-6259 Rev A 38.0 (1.496) 38.2 (1.504) * Emitter Dimensions in Millimeters and (Inches) Gate |
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