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| ALN68135 NPN SILICON LOW NOISE RF TRANSISTOR DESCRIPTION: The ALN68135 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. FEATURES INCLUDE: * NF = 1.6 dB Typical @ 2 GHz *S212 = 12 dB Typical @ 2 GHz * Replacement for NE68135 PACKAGE STYLE SS35 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O 40 mA 20 V 12 V 1.5 V 290 mW @ TA 25 C O -65 C to +200 C -65 C to +150 C 600 C/W O O O 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL ICBO IEBO hFE COB ft S21 NF GA 2 TC = 25 C O TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V VCE = 8.0 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 7.0 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 200 1.0 50 0.2 8.0 9 11 9.0 11 1.6 12 2.3 250 0.7 UNITS nA A --pF GHz dB dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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