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Lead-free Green
NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE General Description
NEW PRODUCT
*
NMSD200B01 is best suited for switching voltage regulator and power management applications. It improves efficiency and reliability of DC-DC converters used in Voltage Regulator Modules (VRM) and can support continuous maximum current of 200mA. It features an ESD protected discrete N-MOSFET with low on-resistance and a discrete Schottky diode with low forward drop. It reduces component count, consumes less space and minimizes parastic losses. The component devices can be used as a part of a circuit or as a stand alone discrete device.
6 5 4
1 2 3
Features
* * * * * * * *
N-MOSFET with ESD Gate Protection N-MOSFET with Low On-Resistance (RDS(ON)) Low Vf Schottky Diode Low Static, Switching and Conduction Losses Good dynamic performance Surface Mount Package Suited for Automated Assembly Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2)
D_Q1 6
Fig. 1: SOT-363
NC 5
A_D1 4
D DMN601K SD103AWS G Q1
A
D1 SCHOTTKY
Mechanical Data
* * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Last Page Weight: 0.016 grams (approximate) Sub-Components DMN601K_DIE (ESD Protected) SD103AWS_DIE Reference Q1 D1
1 G_Q1
NMOS S
C
2 S_Q1
3 C_D1
Fig 2 : Schematic and Pin Configuration
Device Type N-MOSFET Schottky Diode
Figure 2 2
Maximum Ratings, Total Device
Characteristic Power Dissipation (Note 3) Power Derating Factor above 25 C Output Current
@ TA = 25C unless otherwise specified Symbol Pd Pder Iout Value 200 1.6 200 Unit mW mW/C mA
Thermal Characteristics
Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of N-MOSFET)
Notes:
Symbol Tj, Tstg RqJA
Value -55 to +150 625
Unit C C/W
1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30911 Rev. 2 - 2
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NMSD200B1
a Diodes Incorporated
NEW PRODUCT
Maximum Ratings: @ TA = 25C unless otherwise specified Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic Drain Source Voltage Drain Gate Voltage (RGS <+ 1MOhm Gate Source Voltage Continuous Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs=10V) Pulsed (tp<10uS, Duty Cycle<1%) Continuous Source Current Symbol VDSS VDGR VGSS ID IS Value 60 60 +/-20 +/-40 200 800 200 Unit V V V mA mA
Sub-Component Device: Schottky Diode (D1)
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Foward Continuous Current (Page 1: Note 3) Non-Repetitive Peak Foward Surge Current @ t<1.0 s
@ TA = 25C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IFM IFSM Value 40 28 350 1.5 Unit V V mA A
Electrical Characteristics: ESD Protected N-Channel MOSFET (Q1)
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) Gate Body Leakage Current, Foward Gate Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage)
@ TA = 25C unless otherwise specified Symbol VBR(DSS) IDSS IGSSF IGSSR Min 60 3/4 3/4 3/4 1 1.65 3/4 3/4 500 3/4 3/4 80 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 1.6 1.8 0.09 0.62 3/4 1.6 1.25 260 3/4 3/4 3/4 Max 3/4 1 10 -10 2.5 3 1.5 1.25 3/4 3 2 3/4 50 25 5 20 40 0.88 1.5 300 800 Unit V mA mA mA V V V V mA Test Condition VGS = 0V, ID = 10mA VGS = 0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20 V, VDS = 0V VDS = VGS=10V, ID = 0.25mA VDS = VGS = 10V, ID = 1mA VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, VDS >=2*VDS(ON) VGS = 5V, ID= 50mA VGS = 10V, ID = 500mA VDS >=2*VDS(ON), ID=200mA
VGS(th) VDS(on) ID(on) RDS (on) gFS Ciss COSS Crss td(on) td(off) VSD IS ISM
Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Foward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics* Turn-On Delay Time Turn-Off Delay Time Drain-Source Diode Foward On-Voltage Maximum Continuous Drain-Source Diode Foward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Foward Current
W
mS pF pF pF ns ns V mA mA
VDS = 25V, VGS = 0V, f = 1MHz
Drain-Source (Body) Diode Characteristics and Maximum Ratings VGS = 0V, IS = 300 mA*
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d 2%
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NMSD200B01
Electrical Characteristics: Schottky Barrier Diode (D1)
@ TA = 25C unless otherwise specified
NEW PRODUCT
Characteristic Reverse Breakdown Voltage (Note 4) Foward Voltage Drop (Note 4) Peak Reverse Current (Note 4) Total Capacitance Reverse Recovery Time
Notes:
Symbol V(BR)R VFM IRM CT trr
Min 40 3/4 3/4 3/4 3/4 3/4
Typ 3/4 3/4 3/4 3/4 28 10
Max 3/4 0.37 0.6 5 3/4 3/4
Unit V V mA pF ns IR = 10mA IF =20mA IF =200mA VR = 30V
Test Condition
VR = 0V, f = 1.0 MHz IF=IR= 200 mA, Irr= 0.1xIR, RL= 100 W
4. Short duration test pulse used to minimize self-heating effect.
Typical Characteristics
250
PD, POWER DISSIPATION (mW)
200
150
100
50
0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 3, Max Power Dissipation vs. Ambient Temperature
Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics
1.4 VGS = 10V 1.2 VGS = 6V
0.8 VDS = 10V 0.7
TA = 150 C TA = 125 C TA = -55 C TA = 25 C TA = 85 C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5
0.6 0.5
1.0 VGS = 8V 0.8
VGS = 5V
0.4
0.6
VGS = 4V
0.3 0.2
0.4
0.2
VGS = 3V
0.1
0 0 1 2 3 4
0 0 1 2 3 4 5 6
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Output Characteristics
VGS, GATE-SOURCE VOLTAGE Fig. 5 Transfer Characteristics
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NMSD200B01
2
VDS = VGS
10
VDS = 10V ID = 1mA Pulsed
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 10V Pulsed
NEW PRODUCT
1.5
TA = 125 C TA = 150 C
TA = 85 C
1
1
TA = -55 C
0.5
TA = 25 C
TA = 0 C
TA = -25 C
0 -50
-25
0
25
50
75
100
125
150
0.1 0.001
TJ, JUNCTION TEMPERATURE (C) Fig. 6 Gate Threshold Voltage vs. Junction Temperature
0.1 0.01 ID, DRAIN CURRENT (A) Fig. 7 Static Drain-Source On-Resistance vs. Drain Current
1
10
VGS = 5V Pulsed
7 6
ID = 300mA TA = 25 C Pulsed
TA = 125 C TA = 150 C
TA = 85 C
5 4
1
3
TA = -55 C TA = 25 C TA = 0 C TA = -25 C
2
ID = 150mA
1 0
0.1 0.001
0.1 0.01 ID, DRAIN CURRENT (A) Fig. 8 Static Drain-Source On-Resistance vs. Drain Current
1
0
2
4
6
8
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V) Fig. 9 Static Drain-Source On-Resistance vs. Gate-Source Voltage
2.5
VGS = 10V Pulsed
1
ID = 300mA
VGS = 0V Pulsed
2
ID = 150mA
IDR, REVERSE DRAIN CURRENT (A)
TA = 150 C
TA = 125 C
0.1
1.5
TA = 85 C TA = 25 C
1
0.01
TA = 0 C
0.5
TA = -25 C
TA = -55 C
0 -75 -50 -25 0 25 50 75 100 125 150
0.001 0 0.5 1 1.5
Tj, JUNCTION TEMPERATURE ( C) Fig. 10 Static Drain-Source On-State Resistance vs. Junction Temperature
VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Reverse Drain Current vs. Source-Drain Voltage
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NMSD200B01
IS, REVERSE DRAIN CURRENT (A)
VGS = 10V
gFS, FORWARD TRANSCONDUCTANCE (mS)
1
700 600
TA = -25 C
NEW PRODUCT
TA= 25C Pulsed
500
TA = -55 C TA = 25 C
0.1
400 300 200 100 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 13 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON))
TA = 150 C TA = 125 C T = 85 C A
0.01
VGS = 0V
0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 12 Reverse Drain Current vs. Body Diode Forward Voltage 1
Schottky Barrier Diode-D1 Characteristics
IF, INSTANTANEOUS FORWARD CURRENT (A)
1
1000
TA = 125C
0.1
TA = 125 C TA = 75 C
100
TA = 75C
10
0.01
TA = 25 C
1
TA = 0 C
TA = 25C
0.001
TA = -40 C
0.1
TA = 0C
TA = -40C
0.0001 0 200 400 600 800 1000 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 14 Forward Characteristics
0.01 0 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 15 Reverse Characteristics
30
f = 1.0MHz
CT, TOTAL CAPACITANCE (pF)
25
20 15 10 5
0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 16 Total Capacitance vs. Reverse Voltage
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NMSD200B01
Application Details
Drain
Cathode
NEW PRODUCT
ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode (SD103AWS) integrated as one in NMSD200B01 can be used as a discrete entity for general applications or part of circuits to function as a low side switch in a Synchronous Rectifier. The N-MOSFET is selected based on the input voltage range as the maximum duty cycles can be greater than 45%. Schottky diode is selected based on instantaneous Vf (less than 0.75 V) at maximum operation current. The Schottky diode dissipates very little power because it is on for only a small portion of the switching cycle. Normally it shows much lower leakage current and smaller on-resistance (RDS(ON)) even compared to its monolithic counterpart. This device is designed to improve efficiency and reliability of synchronous buck converters used in voltage regulator modules (VRM). The lower Vf of the Schottky diode leads to lower static loss. Every time the high side MOSFET is turned on in the buck converter, the low side Schottky diode is forced to recover the stored charge and there will be lower loss due to the lower Reverse Recovery charge of the Schottky diode. It is designed to replace a discrete N-MOSFET and a Schottky diode in two separate packages into one small package as shown in Fig. 17. The Schottky diode parallel to the MOSFET body diode is faster and has lower voltage drop compared to the integrated body diode. Overall this device consumes less board space and also helps to minimize conduction or switching losses due to parasitic inductances (e.g. PCB traces) in power supply applications. (Please see Fig. 18 for one example of typical application circuit used in conjunction with DC-DC converter as a part of power management system and Fig. 19 for low side DC load control.)
Q1 Gate
D1
SD103AWS DMN601K
Source
Anode
Fig 17 : Example Circuit Diagram
Typical Application Circuits
HighSide Q2 Body Diode VCC
DMN601K
0
DC-DC Controller and Driver ICS
LowSide
Main Inductor
Q1
Load D1 C1
SD103AWS
DMN601K
NMSD200B01
0
Fig. 18 Synchronous Buck Converter with Integrated Schottky Diode
DS30911 Rev. 2 - 2
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NMSD200B01
NEW PRODUCT
5V
R3 1k D2 LED D1
1
DC Load
SD103AWS
U1 1 +Vin R1
+ 2
L1 OUT 1 2
Q1
2
+ Vref
10k
1/2AP393
R2
DMN601K
0
NMSD200B01
10M
(Comparator with Hysteresis)
Fig. 19 Low Side DC Load Control
Ordering Information
Device NMSD200B01-7
Notes:
(Note 5) Marking Code SR1 Packaging SOT-363 Shipping 3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
SR1
YM
SR1 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September March 3
Fig. 20
Date Code Key Month Code Year Code Jan 1 Feb 2 2006 T Apr 4 May 5 2007 U Jun 6 Jul 7 Aug 8 2008 V Sep 9 Oct O Nov N 2009 W Dec D
DS30911 Rev. 2 - 2
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NMSD200B01
Mechanical Details
NEW PRODUCT
SOT-363
A
Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
B C D
0.65 Nominal
G H K M
F H J K
D F L
J
L M a
All Dimensions in mm Fig. 21
Suggested Pad Layout: (Based on IPC-SM-782)
E
E
Figure 14 Dimensions Z G X Y C E SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65
Z
G
C
Y
X
Fig. 22
* Typical dimensions in mm
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30911 Rev. 2 - 2
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NMSD200B01

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