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Lead-free Green
LMN400B01
400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR General Description
*
NEW PRODUCT
LMN400B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA . It also contains a discrete N-MOSFET with gate pull-down resistor that can be used as control. The component devices can be used as a part of a circuit or as a stand alone discrete device.
6 5 4 1 2 3
Fig. 1: SOT-26
Features
* * * * * *
Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2)
C
C_Q1 6
B_Q1 5
S_Q2 4
Q1 PNP
E
DDTB122LU_DIE
B R2 R3 37K G S Q2 NMOSFET D 220 R1 10K
Mechanical Data
* * * * * * * *
Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approx.) Sub-Components DDTB122LU_DIE DSNM6047_DIE (with Gate Pull-Down Resistor) Reference Q1 Q2 Device Type PNP Transistor N-MOSFET
DSNM6047_DIE
1 E_Q1
2 G_Q2
3 D_Q2
Fig. 2 Schematic and Pin Configuration
R1 (NOM) 10K
R2 (NOM) R3 (NOM) 220 37K
Figure 2 2
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 3) Power Derating Factor above 100C Output Current Symbol Pd Pder Iout Value 300 2.4 400 Unit mW mW/C mA
Thermal Characteristics
Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor)
Notes:
Symbol Tj, Tstg RJA
Value -55 to +150 417
Unit C C/W
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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(c) Diodes Incorporated
NEW PRODUCT
Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) @ TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC Value -50 -50 -50 +5 to -6 -400 Unit V V V V mA
Sub-Component Device: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Drain Gate Voltage (RGS 1MOhm) Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Source Current Continuous Pulsed (tp<50 uS) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Symbol VDSS VDGR VGSS ID IS Value 60 60 +/-20 +/-40 115 800 115 Unit V V V mA mA
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Electrical Characteristics:
NEW PRODUCT
Pre-Biased PNP Transistor (Q1) @ TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE(SAT) Equivalent on-resistance* RCE(SAT) 70 DC Current Gain hFE 70 70 70 Input On Voltage Output Voltage (equivalent to VCE(SAT) or VO(on)) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor (Base), +/- 30% Pull-up Resistor (Base to Vcc supply), +/- 30% Resistor Ratio (Input Resistor/Pullup resistor) SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) Collector capacitance, (Ccbo-Output Capacitance)
* Pulse Test: Pulse width, tp <300 S, Duty Cycle, d 0.02
Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO VI(OFF) VOH IO(OFF)
Min -50 -50 -4.9
Typ -0.055 -0.25 -0.12 -0.16 -0.2 -0.25 220 260 265 225 -1.5 -0.1 -18 -1.2 -1.9 -5.25 0.22 10 0.022
Max -100 -500 -1 -0.5 -500 -0.15 -0.3 -0.15 -0.2 -0.25 -0.3 1.125 -0.3 -28 -1.3 -2.2 -5.5
Unit nA nA mA V V V V nA V V V V V V V V mA V V K K
Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10 uA, IE = 0 IC = -2 mA, IB = 0 VCE = -5V, IC = -100uA VCC = -5V, VB = -0.05V, RL = 1K VCC = -50V, VI = 0V IC = -10mA, IB = -0.3mA IC = -100mA, IB = -1mA IC = -200mA, IB = -20mA IC = -300mA, IB= -30mA IC = -400mA, IB= -40mA IC = -500mA, IB = -50mA IC = 400mA, IB = 20mA VCE = -5V, IC = -50 mA VCE = -5V, IC = -100 mA VCE = -5V, IC = -200 mA VCE = -5V, IC = -400 mA VO = -0.3V, IIC = -2 mA VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA VI = -5V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA IC = -400mA, IB = -20mA
VI(ON) VOL Ii VBE(ON) VBE(SAT) R2 R1 R1/R2
-2.45
fT CC
200 20
CE = -10V, MHz V= 100MHz IE = -5mA, f
pF
VCB = -10V, IE = 0A, f = 1MHz
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NEW PRODUCT
Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Forward Transconductance Gate Pull-Down Resistor, +/- 30% DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Time Turn-Off Delay Time td(on) td(off) VSD IS ISM 0.88 20 40 ns ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25, RL = 150 VGS = 0V, IS = 115 mA* Ciss Coss Crss 50 25 5 pF pF pF VDS = -25V, VGS = 0V, = 1MHz VGS(th) VDS(on) ID(on) RDS(on) gFS R3 1 500 80 80 1.86 0.08 0.15 1.55 1.4 240 350 37 2.2 1.5 3.75 3 2 V V mA mS K VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS 2 x VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS 2 x VDS(ON), ID = 115 mA VDS 2 x VDS(ON), ID = 200 mA V(BR)DSS IDSS IGSSF IGSSR 60 1 0.95 -0.95 V A mA mA VGS = 0V, ID = 10uA VGS =0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V Symbol Min Typ Max Unit Test Condition
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current
* Pulse Test: Pulse width, tp <300 S, Duty Cycle, d 0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect.
1.5 115 800
V mA mA
Typical Characteristics
350 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3, Max Power Dissipation vs Ambient Temperature
500 450 IC, COLLECTOR CURRENT (mA) 400 350 300 lb = 2mA 250 200 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCE_SAT COLLECTOR VOLTAGE(V) Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP) lb = 1mA lb = 8mA lb = 9mA lb = 10mA lb = 7mA TA = 25C
lb = 6mA lb = 5mA lb = 4mA lb = 3mA
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Pre-Biased PNP Transistor Characteristics
0.6
0.3
IC/IB = 10
VCE(SAT), COLLECTOR VOLTAGE (V)
NEW PRODUCT
VCE(SAT), COLLECTOR VOLTAGE (V)
IC/IB = 20 0.5
0.2
0.4
TA = -55C
0.3
TA = 125C 0.1 TA = 150C
TA = 25C TA = 85C
0.2
TA =-55C TA = 125C TA = 150C TA = 25C TA = 85C
0.1
0 0.01 0.1 1
0 0.01
0.1
1
IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC
IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC
12
15
VBE(SAT), BASE EMITTER VOLTAGE (V)
IC/IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
10
12
IC/IB = 10 VCE = 5V
8
9
6
6
4 TA = 125C 2 TA = 150C
TA = -55C TA = 25C TA = 85C
TA = 125C 3 TA = 150C
TA = -55C TA = 25C TA = 85C
0 1 10 100 1000
0 10 100 1000 10000
IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC
IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC
400
VCE = 5V
TA = 150C
hFE, DC CURRENT GAIN
TA = 125C 300 TA = 85C
200
TA = 25C
TA =-55C 100
0 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC
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Typical N-Channel MOSFET (Q2) Characteristics
1.4 TA = 25C VGS = 10V
1.2 1.4 VDS = 10V TA =-55C
NEW PRODUCT
1.2 VGS = 6V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TA = 25C TA = 125C 1 TA = 85C 0.8
1.0 VGS = 8V 0.8
VGS = 5V
0.6
VGS = 4V
0.6 TA = 150C 0.4
0.4
0.2
VGS = 3V
0.2
0 0 1 2 3 4 5
0 0 1 2 3 4 5 6
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics
2.2
6
VDS = 10V VDS = VGS ID = 0.25mA Pulsed
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
5
VGS = 5V Pulsed
1.8
4 TA = 125C TA = 150C TA = 85C 2 TA = 25C
1.6
3
1.4
1.2
1
TA = -55C
1.0 -75
-50
-25
0
25
50
75
100 125 150
0 0.001
TJ, JUNCTION TEMPERATURE (C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature
0.1 0.01 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current
1
4
RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W)
7
VGS = 10V Pulsed 3 TA = 125C TA = 150C
6 5 4 ID = 115mA 3 2 1 ID = 50mA
TA = 25C Pulsed
2
TA = 85C TA = 25C
1
TA = -55C
0 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage
ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
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2.5 VGS = 10V Pulsed 2 ID = 50mA 1.5
1
NEW PRODUCT
IS, REVERSE DRAIN CURRENT (A)
ID = 115mA
TA = 125C TA = 25C TA = 85C 0.1 TA = -55C TA = 150C
0.01
1
VGS = 5V Pulsed
0.5 -75 -50 -25 0 25 50 75 100 125 150
0.001 0 0.5 1 1.5
Tj, JUNCTION TEMPERATURE (C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature
VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Source-Drain Voltage
IS, REVERSE DRAIN CURRENT (A)
VGS = 10V VGS = 5V
TA= 25C =25y C Pulsed
gFS, FORWARD TRANSCONDUCTANCE (mS)
1
900 800 700 600 500 400 TA = 125C 300 200 100 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 19 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON)) TA = 150C TA = 85C TA = 25C TA = -55C
0.1
0.01
0.001 0 0.5 1 1.5 2 2.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Body Diode Forward Voltage
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Application Details
NEW PRODUCT
*
PNP Transistor (DDTB122LU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN400B01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher level of dissipation while designing for higher load conditions. These devices provide high power and also consumes less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with voltage regulator as a part of power management system)
Vin
E
DDTB122LU C
Q1 B PNP
Vout
R1 10K
LOAD
R2
220
D
DSNM6047
Q2
S NMOSFET
Control
G
R3 37K
Fig 20 : Circuit Diagram
Typical Application Circuit
5V Supply
U1 U3 Vin
Load Switch
U2 Vin OUT1 1 6 5 4 Gnd Voltage Regulator Vout
Control Logic Circuit (PIC, Comparator etc)
GND
Point of Load
IN OUT
E_Q1 G_Q2 D_Q2
C_Q1 B_Q1 S_Q2
Control 2 3
LMN400B01
Diodes Inc.
Fig 21
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Ordering Information
(Note 5) Marking Code PM3 Packaging SOT-26 Shipping 3000/Tape & Reel
NEW PRODUCT
Device LMN400B01-7
Note:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM3
PM3 = Product Type Marking Code, YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
Fig. 22 Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D
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Mechanical Details
NEW PRODUCT
A
SOT-26 Dim A
BC
Min 0.35 1.5 2.7 2.9 0.013 1 0.35 0.1 0 All Dimensions in mm
Max 0.5 1.7 3 3.1 0.1 1.3 0.55 0.2 8
Typ 0.38 1.6 2.8 0.95 0.55 3 0.05 1.1 0.4 0.15 -
B C D
H K M
F H J K L M Fig. 23
J
D
F
L
Suggested Pad Layout: (Based on IPC-SM-782)
E
E
Figure 24 Dimensions Z G SOT-26* 3.2 1.6 0.55 0.8 2.4 0.95
Z
G
C
X Y C
Y
E
X
Fig. 24
* Typical dimensions in mm
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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