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Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBN 75N170A VCES IC25 VCE(sat) tfi
= 1700 = 75 = 6.0 = 60
V A V ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125C RG = 10 non repetitive TC = 25C
Maximum Ratings 1700 1700 20 30 75 42 240 ICM = VCES = 100 1350 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A A V s W C C C
miniBLOC, SOT-227 B (IXBN) E153432
E G
E C
G = Gate E = Emitter
C = Collector
Either Source terminal at miniBLOC can be used as Main or Kelvin Emitter
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features High Blocking Voltage Fast switching High current handling capability MOS Gate turn-on - drive simplicity Isolation voltage 2500V
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1700 2.5 TJ = 25C TJ = 125C 5.5 50 1.5 200 TJ = 125C 4.5 5.0 6.0 V V A mA nA V V
Applications AC motor speed control Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Substitutes for high voltage MOSFETs Advantages Lower conduction losses than MOSFETs High power density Easy to mount with 2 screws Space saving
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 1500 A, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
(c) 2002 IXYS All rights reserved
98938 (7/02)
IXBN 75N170A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 50 7400 VCE = 25 V, VGE = 0 V, f = 1 MHz 340 90 310 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 60 110 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 1.0 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 35 60 240 60 6.0 35 60 10 280 120 12 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.2 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
Reverse Diode Symbol VF IRM t rr Test Conditions IF t IF vR
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5.0 15 330 V A ns
= IC90, VGE = 0 V, Pulse test, < 300 us, duty cycle d < 2% = 25A, VGE = 0 V, -diF/dt = 50 A/us = 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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