|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
APTM50DAM38CT Boost chopper SiC FWD diode VDSS = 500V RDSon = 38mW max @ Tj = 25C ID = 90A @ Tc = 25C Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated * FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration MOSFET Power Module VBUS VBUS SENSE NTC2 CR1 OUT Q2 G2 S2 0/VBU S NTC1 * * * * G2 S2 OUT VBUS 0/VBUS OUT VBUS SENSE S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile Max ratings 500 90 67 360 30 38 694 46 50 2500 Unit V A APTM50DAM38CT - Rev 1 May, 2004 Tc = 25C Tc = 80C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-7 APTM50DAM38CT All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 375A VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25C Tj = 125C Typ Max 150 750 38 5 150 Unit V A mW V nA VGS = 10V, ID = 45A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 90A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 90A RG = 2W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 90A, RG = 2 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 90A, RG = 2 Min Typ 11.2 2.36 0.18 246 66 130 18 35 87 77 906 1452 1490 1692 J J ns Max Unit nF nC u In accordance with JEDEC standard JESD24-1. Diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions 50% duty cycle Min Tc = 125C Tj = 25C Tj = 175C IF = 60A Typ 60 1.6 2.0 84 390 300 Max 1.8 2.4 Unit A V nC pF f = 1MHz, VR = 200V f = 1MHz, VR = 400V APT website - http://www.advancedpower.com 2-7 APTM50DAM38CT - Rev 1 May, 2004 IF = 60A, VR = 300V di/dt =1600A/s APTM50DAM38CT Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor Diode 2500 -40 -40 -40 Min Typ Max 0.18 0.45 150 125 100 4.7 160 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min,I isol<1mA, 50/60Hz To heatsink M5 Temperature sensor NTC Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.16 K RT = R 25 e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e Min Typ 68 4080 Max Unit kW K Package outline APT website - http://www.advancedpower.com 3-7 APTM50DAM38CT - Rev 1 May, 2004 APTM50DAM38CT Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.9 0.7 0.5 0.3 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10 Low Voltage Output Characteristics 350 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 300 250 200 150 100 50 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A) Normalized to VGS=10V @ 45A Transfert Characteristics 250 VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 8V 7.5V 7V 6.5V 6V 5.5V 200 150 100 50 TJ=25C TJ=125C TJ=-55C 8 0 25 0 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0 VGS=10V DC Drain Current vs Case Temperature 100 80 60 40 20 0 VGS=20V 50 100 150 200 25 APT website - http://www.advancedpower.com 4-7 APTM50DAM38CT - Rev 1 May, 2004 ID, Drain Current (A) 50 75 100 125 TC, Case Temperature (C) 150 APTM50DAM38CT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 Crss 100 VGS, Gate to Source Voltage (V) 1000 limited by RDSon 2.5 2.0 1.5 1.0 0.5 0.0 ON resistance vs Temperature VGS=10V ID=45A -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 100 limited by RDSon 100s 10 Single pulse TJ=150C 1 1 1ms 10ms 100ms 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=90A 12 T =25C J V =250V CE 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) APTM50DAM38CT - Rev 1 May, 2004 VCE=400V 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 APT website - http://www.advancedpower.com 5-7 APTM50DAM38CT Delay Times vs Current 100 80 60 40 20 0 20 40 60 80 100 120 140 ID, Drain Current (A) Switching Energy vs Current 4 Switching Energy (mJ) 3 2 1 0 20 40 60 80 100 120 140 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 20 30 40 50 60 70 80 ID, Drain Current (A) VDS=333V D=50% RG=2 TJ=125C VDS=333V RG=2 TJ=125C L=100H Rise and Fall times vs Current td(off) 120 100 tr and tf (ns) VDS=333V RG=2 TJ=125C L=100H td(on) and td(off) (ns) tf 80 60 40 20 0 20 td(on) tr 40 60 80 100 120 140 ID, Drain Current (A) Switching Energy vs Gate Resistance 8 Switching Energy (mJ) 7 6 5 4 3 2 1 0 0 5 10 15 20 25 Eon VDS=333V ID=90A TJ=125C L=100H VDS=333V RG=2 TJ=125C L=100H Eoff Eoff Eon Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 400 1000 100 TJ=150C 10 TJ=25C 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APTM50DAM38CT - Rev 1 May, 2004 APT website - http://www.advancedpower.com 6-7 APTM50DAM38CT Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 1200 IR Reverse Current (A) 1000 800 600 400 200 0 200 TJ=25C TJ=175C TJ=125C TJ=75C Thermal Impedance (C/W) 10 120 IF Forward Current (A) TJ=25C TJ=75C 90 60 30 0 0 0.5 TJ=175C TJ=125C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 300 400 500 600 700 VR Reverse Voltage (V) 800 2500 C, Capacitance (pF) 2000 1500 1000 500 0 1 APTM50DAM38CT - Rev 1 May, 2004 10 100 VR Reverse Voltage 1000 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 7-7 |
Price & Availability of APTM50DAM38CT |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |