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TYPICAL PERFORMANCE CURVES (R)
APT50GT60BRDQ2 APT50GT60BRDQ2G*
APT50GT60BRDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Thunderbolt IGBT(R)
The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 100KHz * Ultra Low Leakage Current
G
TO -2 47
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT50GT60BRDQ2(G) UNIT Volts
600 30
@ TC = 25C
110 52 150 150A @ 600V 446 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
600 3 1.7 4 2.0 2.2 50
2
5 2.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
Volts
I CES I GES
A nA
12-2005 052-6272 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
TBD 120
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GT60BRDQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 50A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
2500 250 155 7.5 240 20 110 150 14 32 240 36 995 1110 1070 14 32 270 95 1035 1655 1505 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V I C = 50A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.28 .67 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6272
Rev B
12-2005
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
200 180 160 140 120 100 80 60 40 20 0
APT50GT60BRDQ2(G)
15V 13V 11V 10V
TJ = 25C
TJ = -55C
TJ = 125C
9V
8V 7V 6V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 50A C T = 25C
J
0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
TJ = -55C
VCE = 120V VCE = 300V VCE = 480V
80 60 40 20 0 0 TJ = 25C TJ = 125C
8 6 4 2 0 0 50
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V)
100 150 200 GATE CHARGE (nC)
250
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
4
IC = 100A
IC = 100A
3
IC = 50A
IC = 50A
2
IC = 25A
1
IC = 25A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160
1.05 1.00 0.95 0.90 0.85 0.80 0.75
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10
140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
Lead Temperature Limited
052-6272
0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
Rev B
12-2005
25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
350 300 250 200 150 50 VCE = 400V RG = 5
APT50GT60BRDQ2(G)
20 VGE = 15V
15
VGE =15V,TJ=125C VGE =15V,TJ=25C
10
5 VCE = 400V
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
90 80 70 tf, FALL TIME (ns) tr, RISE TIME (ns) 60 50 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V RG = 5, L = 100H, VCE = 400V
0
TJ = 25C, or 125C RG = 5 L = 100H
0
20 40 60 80 100 125 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
180 160 140 120 100 80 60 40 20 0
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
0
L = 100H
0
RG = 5, L = 100H, VCE = 400V
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
5000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 5
G
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
3500 3000 2500 2000 1500 1000 500 0
TJ = 25C
= 400V V CE = +15V V GE R = 5
G
4000
TJ = 125C
TJ = 125C
3000
2000
1000
TJ = 25C
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
10,000 SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
5,000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 5
G
Eon2,100A
Eon2,100A
8,000
4,000
Eoff,100A
6,000
3,000
4,000 Eoff,100A
12-2005
Eoff,50A Eon2,50A Eoff,25A
2,000
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
2,000
1,000
Rev B
052-6272
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
Eon2,25A
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
4,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GT60BRDQ2(G)
C, CAPACITANCE ( F)
P
1,000
500
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
0.3 SINGLE PULSE 0.1 0.05 10-5 10-4
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
120 FMAX, OPERATING FREQUENCY (kHz)
50
RC MODEL Junction temp. (C) 0.114 Power (watts) 0.113 Case temperature. (C) 0.0276 0.0057
10
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
2
10 20
052-6272
Rev B
12-2005
APT50GT60BRDQ2(G)
Gate Voltage
APT40DQ120
10% td(on) tr TJ = 125C Collector Current
V CC
IC
V CE
90%
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6272
Rev B
12-2005
TYPICAL PERFORMANCE CURVES
APT50GT60BRDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 50A Forward Voltage IF = 100A IF = 50A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT50GT60BRDQ2(G) UNIT Amps
40 63 320
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.1 2.7 1.8
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.1 0.05 10-5 10-4
Note:
22 25 35 3 160 480 6 85 920 20 -
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C
D = 0.9
0.7
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
0.289 Power (watts) 0.381 Case temperature (C)
0.00448
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6272
0.120
Rev B
12-2005
Junction temp (C)
120 trr, REVERSE RECOVERY TIME (ns) 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC) 1200 1000 800 600 400 200 0
T = 125C J V = 400V
R
180 160 140 120 100 80 60 40 20 80A
APT50GT60BRDQ2(G)
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
40A 20A
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
80A
80A
20
15
40A
10
40A 20A
20A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 80
Duty cycle = 0.5 T = 175C
J
0
1.4
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
1.2 1.0 0.8 0.6 0.4 0.2 trr
Qrr IRRM
70 60 IF(AV) (A) 50 40 30
trr Qrr
20 10
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
0.0
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
200
CJ, JUNCTION CAPACITANCE (pF)
180 160 140 120 100 80 60 40 20
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
Rev B
12-2005
0
1
052-6272
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT40GT60BR
APT50GT60BRDQ2(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6272
Dimensions in Millimeters and (Inches)
Rev B
Gate Collector (Cathode) Emitter (Anode)
12-2005
19.81 (.780) 20.32 (.800)

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