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| Semiconductor 2SC5345EF NPN Silicon Transistor Description * RF amplifier Features * High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] * Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] * Low base time constant and high gain * Excellent noise response Ordering Information Type NO. 2SC5345E Marking Z : hFE rank Package Code SOT-523F Outline Dimensions unit : mm 1.600.1 0.880.1 1 1.600.1 1.000.1 3 2 0.25~0.30 +0.1 0.68 -0.05 . KST-4017-000 1.110.05 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 1 2SC5345EF Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature range Ta=25C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 150 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Ta=25C Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=10A, IE=0 IC=5mA, IB=0 IE=10A, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IE=-1mA VCB=6V, IE=0, f=1MHz Min. Typ. Max. 30 20 4 40 550 1.4 0.5 0.5 240 0.3 - Unit V V V A A V MHz pF * : hFE rank / R : 40~80, O : 70~140, Y : 120~240 KST-4017-000 2 2SC5345EF Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VCE Fig. 3 hFE-IC Fig. 4 fT-IE Fig. 5 Cob-VCB, Cib-VEB Fig. 6 Yie-IC KST-4017-000 3 2SC5345EF Electrical Characteristic Curves Fig. 7 IC-Yoe Fig. 8 IC-Yfe Fig. 9 IC - Yre KST-4017-000 4 |
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