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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN-PCS/cellular radio and WLL applications. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 9.5 dB Intermodulation Distortion -- -28 dBc * Typical Two-Tone Performance at 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 10.5 dB Efficiency -- 32% Intermodulation Distortion -- -30 dBc * S-Parameter Characterization at High Bias Levels * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 60 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters MRF286 MRF286S Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE 2000 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF286) CASE 465A-04, STYLE 1 (MRF286S) MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 20 240 1.37 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.73 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. "PILOT PRODUCTION PROTOTYPE ("X" Status)" devices are preproduction products and may not be released or produced in volume. "X" status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice. REV 3 MOTOROLA RF (c) Motorola, Inc. 2000 DEVICE DATA MRF286 MRF286S 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 20 Adc) Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Input Capacitance(1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output. Gps 9.5 10.5 -- dB Crss Ciss Coss -- -- -- 3 145 51 -- -- -- pF pF pF gfs VGS(th) VGS(Q) VDS(on) -- 2 3 -- 3 3.2 4.15 0.16 -- 4 5 0.6 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit 28 32 -- % IMD -- 30 -28 dBc IRL -- -12 -9 dB No Degradation In Output Power MRF286 MRF286S 2 MOTOROLA RF DEVICE DATA VGG + C3 R1 R2 R3 R5 R6 R7 VDD + C18 + C19 W1 C4 W2 C7 R4 B1 C5 C8 C15 C13 B2 C12 W3 C14 W4 L2 Z9 Z10 RF INPUT L1 Z1 Z2 Z3 C6 C1 C2 C9 Z4 Z5 Z6 Z7 Z8 DUT C10 C11 C16 C17 L3 Z11 Z12 Z13 Z14 Z15 Z16 Z17 RF OUTPUT Z18 L4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 0.436 x 0.080 Microstrip 0.248 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.529 x 0.080 Microstrip 0.024 x 0.325 Microstrip 0.144 x 0.325 Microstrip 0.098 x 0.325 Microstrip 0.215 x 0.515 Microstrip 0.215 x 0.515 Microstrip 0.044 x 0.325 Microstrip 0.060 x 0.325 Microstrip 0.141 x 0.325 Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Board RF Circuit Board 0.025 x 0.325 Microstrip 0.544 x 0.080 Microstrip 0.108 x 0.080 Microstrip 0.095 x 0.080 Microstrip 0.996 x 0.080 Microstrip 0.077 x 0.080 Microstrip 0.030 Glass Teflon(R), 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 3 x 5 Copper Clad PCB, Glass Teflon(R), r = 2.55 Figure 1. 1.93 - 2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 - 2.0 GHz Broadband Component Designations and Values Designators B1, B2 C1, C2, C9 C3, C18 C4, C14 C5, C15 C6 C7, C12 C8, C13 C10 C11 C16 C17 C19 L1 L2 L3 L4 R1, R2, R3, R5, R6, R7 R4 W1, W2, W3, W4 WS1, WS2 Ferrite Bead, Round, Newark #95F769 0.8-8.0 pF, Variable Capacitors, Gigatrim Johanson, Newark #44F3360 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 0.1 mF, Chip Capacitors, Kemet #CDR33BX104AKWS 91 pF, RF Chip Capacitors, B Case, ATC #100B910JP500X 8.2 pF, RF Chip Capacitor, B Case, ATC #100B8R2CP500X 1000 pF, RF Chip Capacitors, B Case, ATC #100B102JP50X 5.1 pF, RF Chip Capacitors, B Case, ATC #100B5R1CP500X 0.4-2.5 pF, Variable Capacitor, Gigatrim Johanson, Newark #44F3367 2.2 pF, RF Chip Capacitor, B Case, ATC #100B2R2JP500X 200 pF, RF Chip Capacitor, B Case, ATC #100B201JP500X 0.1 pF, RF Chip Capacitor, B Case, ATC #100B0R1BP500X 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet #T495X106K035AS4394 8 Turns, #24 AWG, 0.120 OD, 0.270 Long (28.0 nH), CoilCraft #B08T-5 6 Turns, #24 AWG, 0.195 OD, 0.150 Long (47.0 nH), CoilCraft #1812SMS-47NJ 2 Turns, #24 AWG, 0.120 OD, 0.145 Long (5.0 nH), CoilCraft #A02T-5 3 Turns, #24 AWG, 0.120 OD, 0.145 Long (8.0 nH), CoilCraft #A03T-5 12 , 1/4 W Chip Resistors (0.08 x 0.13), Garrett Instruments #RM73B2B120JT 560 k, 1/4 W Chip Resistor (0.08 x 0.13) Solid Copper Buss Wire, #16 AWG Beryllium Copper Wear Blocks (0.005 x 0.210 x 0.520) Nominal Description MOTOROLA RF DEVICE DATA MRF286 MRF286S 3 C3 C4 R1 W1 R2 W2 R3 C8 C5 C7 R4 B1 C13 C12 R6 W3 R5 B2 C15 L2 C16 C17 C1 C2 C10 C9 C14 R7 W4 C18 C19 L3 L4 WS1 WS2 L1 C6 C11 MRF286/S Rev-0 D. W. Joersz Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout MRF286/S Rev-0 D. W. Joersz (Scale 1:1) Figure 3. MRF286 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MRF286 MRF286S 4 MOTOROLA RF DEVICE DATA Zo = 1 Zin f = 2.4 GHz f = 1.8 GHz ZOL* f = 2.4 GHz f = 1.8 GHz VDD = 26 V, IDQ = 500 mA, Pout = 60 Watts (PEP) f MHz 1800 1900 2000 2100 2200 2300 2400 Zin Zin 1.0 - j0.57 1.19 - j0.005 1.38 + j0.20 1.75 + j0.47 2.40 + j0.80 4.90 + j1.20 7.50 - j1.85 ZOL* 1.25 - j2.31 1.35 - j2.0 1.40 - j1.6 1.60 - j1.7 1.80 - j2.0 1.85 - j2.1 1.90 - j2.18 Input Matching Network Device Under Test Output Matching Network = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Z in Z * OL Figure 4. Series Large-Signal Device Impedances MOTOROLA RF DEVICE DATA MRF286 MRF286S 5 Table 2. High Bias Small-Signal S-Parameters ID = 3.6 A f GHz 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 S11 |S11| 0.945 0.949 0.954 0.961 0.957 0.953 0.950 0.946 0.942 0.936 0.945 0.952 0.954 0.915 0.851 0.916 0.936 0.953 -180 -180 178 178 177 176 175 175 174 174 173 171 170 167 169 172 169 168 |S21| 0.458 0.406 0.357 0.324 0.301 0.290 0.275 0.271 0.275 0.286 0.310 0.354 0.427 0.513 0.507 0.417 0.260 0.172 S21 8 5 1 -1 -3 -6 -9 -12 -16 -21 -27 -36 -51 -76 -112 -148 -180 164 |S12| 0.02 0.02 0.03 0.03 0.03 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.08 0.08 S12 105 93 79 73 74 59 75 79 80 81 83 75 81 71 72 88 66 54 |S22| 0.905 0.900 0.885 0.874 0.889 0.899 0.921 0.927 0.934 0.939 0.943 0.940 0.944 0.957 0.970 0.983 0.977 0.980 S22 -179 -180 180 -179 -178 -178 -178 -180 180 179 177 177 176 175 174 172 170 170 MRF286 MRF286S 6 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS G 1 Q 2 PL 0.25 (0.010) M TA M B M -B- 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 465-01, -02 AND -03 OBSOLETE, NEW STANDARD 465-04. 4. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.055 0.065 0.170 0.210 0.772 0.788 0.118 0.138 0.365 0.375 MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.40 1.65 4.32 5.33 19.60 20.00 3.00 3.51 9.27 9.53 K D 2 H N 0.38 (0.015) M T A R M B M 0.38 (0.015) C -T- M TA M B M -A- E SEATING PLANE F DIM A B C D E F G H K N Q R STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465-04 ISSUE D (MRF286) RADIUS U 4 PL 1 RADIUS 4 PL S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.055 0.065 0.170 0.210 0.775 0.785 0.365 0.375 0.020 REF 0.030 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.40 1.65 4.32 5.33 19.69 19.94 9.27 9.53 0.51 REF 0.76 REF -B- K D N 0.64 (0.025) M T A H 3 2 R M B C M 0.38 (0.015) M TA M B M DIM A B C D E F H K N R S U -T- SEATING PLANE -A- E F STYLE 1: PIN 1. DRAIN 2. GATE 4. SOURCE CASE 465A-04 ISSUE D (MRF286S) MOTOROLA RF DEVICE DATA MRF286 MRF286S 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF286 MRF286S 8 MOTOROLA RF DEVICE DATA MRF286, MRF286S PILOT PRODUCTION PROTOTYPE DATA SHEET |
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